METHOD OF MAKING A VERTICALLY STRUCTURED LIGHT EMITTING DIODE
    1.
    发明申请
    METHOD OF MAKING A VERTICALLY STRUCTURED LIGHT EMITTING DIODE 审中-公开
    制造垂直结构发光二极管的方法

    公开(公告)号:US20110076794A1

    公开(公告)日:2011-03-31

    申请号:US12872560

    申请日:2010-08-31

    IPC分类号: H01L33/02

    CPC分类号: H01L33/0095 H01L33/0079

    摘要: A method of making a vertically structured light emitting diode includes: providing a sacrificial substrate having first and second portions; forming a first buffer layer on a surface of the sacrificial substrate; forming a second buffer layer on a surface of the first buffer layer; forming a light emitting unit on a surface of the second buffer layer; forming a device substrate on a surface of the light emitting unit; etching the first portion of the sacrificial substrate such that the second portion of the sacrificial substrate remains on the first buffer layer; dry-etching the second portion of the sacrificial substrate; dry-etching the first buffer layer; and etching the second buffer layer. An etch rate of a material of the second buffer layer is lower than an etch rate of a material of the first buffer layer.

    摘要翻译: 制造垂直结构的发光二极管的方法包括:提供具有第一和第二部分的牺牲衬底; 在所述牺牲衬底的表面上形成第一缓冲层; 在所述第一缓冲层的表面上形成第二缓冲层; 在所述第二缓冲层的表面上形成发光单元; 在所述发光单元的表面上形成器件基板; 蚀刻牺牲衬底的第一部分,使得牺牲衬底的第二部分保留在第一缓冲层上; 干蚀刻牺牲衬底的第二部分; 干蚀刻第一缓冲层; 并蚀刻第二缓冲层。 第二缓冲层的材料的蚀刻速率低于第一缓冲层的材料的蚀刻速率。

    Quantum dot infrared photodetector apparatus
    3.
    发明申请
    Quantum dot infrared photodetector apparatus 有权
    量子点红外光电探测器

    公开(公告)号:US20100117060A1

    公开(公告)日:2010-05-13

    申请号:US12453088

    申请日:2009-04-29

    IPC分类号: H01L31/0352

    摘要: The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device comprises a substrate, a first contact layer formed on the substrate, an active layer formed on the first contact layer, a barrier layer formed on the active layer and a second contact layer formed on the barrier layer, wherein the active layer comprises multiple quantum dot layers.

    摘要翻译: 公开了能够正常入射检测红外光以有效地将红外光转换为电信号的装置的本发明。 该器件包括衬底,形成在衬底上的第一接触层,形成在第一接触层上的有源层,形成在有源层上的阻挡层和形成在阻挡层上的第二接触层,其中有源层包括多个 量子点层。