公开(公告)号：US07678633B2

公开(公告)日：2010-03-16

申请号：US11603750

申请日：2006-11-22

申请人： Juei-Nai Kwo ,  Ming-Hwei Hong ,  Wei Chin Lee ,  Hsiang Pi Chang ,  Yan Dar Wu ,  Kun Yu Lee ,  Yi Jiun Lee

发明人： Juei-Nai Kwo ,  Ming-Hwei Hong ,  Wei Chin Lee ,  Hsiang Pi Chang ,  Yan Dar Wu ,  Kun Yu Lee ,  Yi Jiun Lee

IPC分类号： H01L29/72

CPC分类号： H01L21/28194 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02269 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： The present invention provides a method for forming substrates for MOS (metal oxide semiconductor) transistor, comprising the following steps: (A) In a reduced-pressure environment having a pressure lower than 1×10−6 Torr, a base for accomplishing the surface reconstruction and a solid-state metal oxide source is provided, wherein the solid-state metal oxide source is chosen from the group consisting of the following: hafnium oxide, aluminum oxide, scandium oxide, yttrium oxide, titanium oxide, gallium gadolinium oxide and metal oxides of rare earth elements; and (B) vaporize the solid-state metal oxide source in order to make the solid-state metal oxide source become a metal oxide molecular beam and, in a working substrate temperature that is required to achieve an amorphous state of a first metal oxide film, deposit on the base having an amorphous state so as to further fabricate a substrate for MOS transistors.

摘要翻译： 本发明提供一种用于形成MOS（金属氧化物半导体）晶体管的衬底的方法，包括以下步骤：（A）在压力低于1×10-6乇的减压环境中，用于实现表面 提供重构和固态金属氧化物源，其中固态金属氧化物源选自下列物质：氧化铪，氧化铝，氧化钪，氧化钇，氧化钛，镓钆氧化物和金属 稀土元素氧化物; 和（B）使固态金属氧化物源汽化以使固态金属氧化物源成为金属氧化物分子束，并且在实现第一金属氧化物膜的无定形状态所需的工作衬底温度 沉积在具有非晶状态的基底上，从而进一步制造用于MOS晶体管的衬底。

公开(公告)号：US20140053980A1

公开(公告)日：2014-02-27

申请号：US13591167

申请日：2012-08-21

申请人： Chih-I Peng ,  Hsiang-Pi Chang ,  Cary Chia-Chiung Lo ,  Teng-Chun Tsai ,  Kuo-Yin Lin ,  Chih-Yuan Yang

发明人： Chih-I Peng ,  Hsiang-Pi Chang ,  Cary Chia-Chiung Lo ,  Teng-Chun Tsai ,  Kuo-Yin Lin ,  Chih-Yuan Yang

IPC分类号： B01D53/26 ,  B44C1/22

CPC分类号： B01D53/265

摘要： A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.

摘要翻译： 公开了一种化学机械抛光（CMP）室。 CMP室包括室主体，安装在室主体上的门和一个室底部结构，其中一个选自一个选自由分离在CMP室中产生的水分的湿气分离器组成的组，辅助排气口，安装在该室主体上的透明窗口 门，安装在门上的取样口，包括金属框架的密封材料，用于密封门的O形环及其组合。

公开(公告)号：US10279311B2

公开(公告)日：2019-05-07

申请号：US13591167

申请日：2012-08-21

申请人： Chih-I Peng ,  Hsiang-Pi Chang ,  Cary Chia-Chiung Lo ,  Teng-Chun Tsai ,  Kuo-Yin Lin ,  Chih-Yuan Yang

发明人： Chih-I Peng ,  Hsiang-Pi Chang ,  Cary Chia-Chiung Lo ,  Teng-Chun Tsai ,  Kuo-Yin Lin ,  Chih-Yuan Yang

IPC分类号： B24B37/04 ,  B24B37/30 ,  H01L21/67 ,  B01D53/26 ,  F24F3/16

摘要： A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.

公开(公告)号：US09937536B2

公开(公告)日：2018-04-10

申请号：US13547275

申请日：2012-07-12

申请人： Kuo-Yin Lin ,  Chih-I Peng ,  Kun-Tai Wu ,  Teng-Chun Tsai ,  Hsiang-Pi Chang ,  Cary Chia-Chiung Lo

发明人： Kuo-Yin Lin ,  Chih-I Peng ,  Kun-Tai Wu ,  Teng-Chun Tsai ,  Hsiang-Pi Chang ,  Cary Chia-Chiung Lo

IPC分类号： B08B9/093 ,  H01L21/67 ,  B24B37/34 ,  B08B5/02

CPC分类号： B08B9/093 ,  B08B5/02 ,  B24B37/34 ,  H01L21/67028

摘要： Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.

公开(公告)号：US20140014136A1

公开(公告)日：2014-01-16

申请号：US13547275

申请日：2012-07-12

申请人： Kuo-Yin Lin ,  Chih-I Peng ,  Kun-Tai Wu ,  Teng-Chun Tsai ,  Hsiang-Pi Chang ,  Cary Chia-Chiung Lo

发明人： Kuo-Yin Lin ,  Chih-I Peng ,  Kun-Tai Wu ,  Teng-Chun Tsai ,  Hsiang-Pi Chang ,  Cary Chia-Chiung Lo

IPC分类号： B08B9/093

CPC分类号： B08B9/093 ,  B08B5/02 ,  B24B37/34 ,  H01L21/67028

摘要： Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.

摘要翻译： 除其他之外，还提供了一种或多种技术和/或系统来清洁半导体抛光装置的抛光模块。 吹扫空气流可以被提供到抛光模块中（例如，指向抛光单元，屏蔽件和/或​​其它抛光部件），以在抛光模块内产生湍流空气流。 可以调用辅助排气以排出通过湍流空气流从抛光模块移除的一个或多个颗粒。 吹扫空气流循环可以通过在打开和关闭状态之间循环吹扫空气流和辅助排气来进行。 在主空气流循环期间可以执行一个或多个吹扫空气流循环，其中层流气流被供应到抛光模块中并且使用主排气排出。 以这种方式，可以从抛光模块清洁一个或多个颗粒。