Tripod constant velocity joint
    1.
    发明授权
    Tripod constant velocity joint 有权
    三脚架等速万向节

    公开(公告)号:US08568244B2

    公开(公告)日:2013-10-29

    申请号:US13023837

    申请日:2011-02-09

    CPC classification number: F16D3/2055

    Abstract: A constant velocity joint for a drive system comprises: a tripod housing coupled to the first rotating shaft and having a plurality of guide grooves therein, each guide groove extending in an axial direction of the tripod housing; a spider coupled to the second rotating shaft and having a plurality of trunnions, each trunnion positioned in a corresponding guide groove of the tripod housing; and a spherical roller disposed between the trunnion and the guide groove of the tripod housing, and a plurality of needle rollers disposed between the trunnion and spherical roller. Each spherical roller is in angular contact with the guide groove of the tripod housing with two contact points displaced relative to a pitch circle diameter line of the tripod housing. The ratio of the length (CL) between two contact points of tripod housing groove to the length (SL) between two edges of spherical roller is between 0.5 and 0.85, and the ratio of the radius (TGR2) of the guide groove of the tripod housing to the radius (SRR) of the spherical roller is between 1.1 and 1.4.

    Abstract translation: 用于驱动系统的恒速接头包括:三脚架壳体,其联接到第一旋转轴并且在其中具有多个引导槽,每个引导槽沿三角架壳体的轴向方向延伸; 一个与所述第二旋转轴相连并且具有多个耳轴的蜘蛛,每个耳轴位于所述三脚架壳体的对应引导槽中; 以及设置在三角架壳体的耳轴和引导槽之间的球面滚子,以及设置在耳轴和球面滚子之间的多个滚针。 每个球面滚子与三脚架壳体的引导槽成角度接触,两个接触点相对于三脚架外壳的节圆直径线移动。 三脚架壳体槽的两个接触点与球面滚子的两个边缘之间的长度(SL)之间的长度(CL)的比率在0.5和0.85之间,并且三脚架的引导槽的半径(TGR2) 外壳到球面滚子的半径(SRR)在1.1和1.4之间。

    TRIPOD CONSTANT VELOCITY JOINT
    3.
    发明申请
    TRIPOD CONSTANT VELOCITY JOINT 有权
    三联恒速联动

    公开(公告)号:US20120202606A1

    公开(公告)日:2012-08-09

    申请号:US13023837

    申请日:2011-02-09

    CPC classification number: F16D3/2055

    Abstract: A constant velocity joint for a drive system comprises: a tripod housing coupled to the first rotating shaft and having a plurality of guide grooves therein, each guide groove extending in an axial direction of the tripod housing; a spider coupled to the second rotating shaft and having a plurality of trunnions, each trunnion positioned in a corresponding guide groove of the tripod housing; and a spherical roller disposed between the trunnion and the guide groove of the tripod housing, and a plurality of needle rollers disposed between the trunnion and spherical roller. Each spherical roller is in angular contact with the guide groove of the tripod housing with two contact points displaced relative to a pitch circle diameter line of the tripod housing. The ratio of the length (CL) between two contact points of tripod housing groove to the length (SL) between two edges of spherical roller is between 0.5 and 0.85, and the ratio of the radius (TGR2) of the guide groove of the tripod housing to the radius (SRR) of the spherical roller is between 1.1 and 1.4.

    Abstract translation: 用于驱动系统的恒速接头包括:三脚架壳体,其联接到第一旋转轴并且在其中具有多个引导槽,每个引导槽沿三角架壳体的轴向方向延伸; 一个与所述第二旋转轴相连并且具有多个耳轴的蜘蛛,每个耳轴位于所述三脚架壳体的对应引导槽中; 以及设置在三角架壳体的耳轴和引导槽之间的球面滚子,以及设置在耳轴和球面滚子之间的多个滚针。 每个球面滚子与三脚架壳体的引导槽成角度接触,两个接触点相对于三脚架外壳的节圆直径线移动。 三脚架壳体槽的两个接触点与球面滚子的两个边缘之间的长度(SL)之间的长度(CL)的比率在0.5和0.85之间,并且三脚架的引导槽的半径(TGR2) 外壳到球面滚子的半径(SRR)在1.1和1.4之间。

    SURFACE TREATMENT METHOD, SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
    4.
    发明申请
    SURFACE TREATMENT METHOD, SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE 审中-公开
    表面处理方法,半导体器件及形成半导体器件的方法

    公开(公告)号:US20090020884A1

    公开(公告)日:2009-01-22

    申请号:US12176226

    申请日:2008-07-18

    Abstract: Provided are methods of surface treatment, semiconductor devices and methods of forming the semiconductor device. The methods of forming the semiconductor device include forming a first oxide layer and a second oxide layer on a substrate. The first and second oxide layers are patterned to form a contact hole exposing the substrate. A sidewall of the first oxide layer exposed by the contact hole reacts with HF to form a first reaction layer and a sidewall of the second oxide layer exposed by the contact hole reacts with NH3 and HF to form a second reaction layer. The first and second reaction layers are removed to enlarge the contact hole. A contact plug is formed in the enlarged contact hole.

    Abstract translation: 提供表面处理的方法,半导体器件和形成半导体器件的方法。 形成半导体器件的方法包括在衬底上形成第一氧化物层和第二氧化物层。 图案化第一和第二氧化物层以形成暴露衬底的接触孔。 由接触孔暴露的第一氧化物层的侧壁与HF反应以形成第一反应层,并且由接触孔暴露的第二氧化物层的侧壁与NH 3和HF反应形成第二反应层。 去除第一和第二反应层以扩大接触孔。 在扩大的接触孔中形成接触塞。

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