公开(公告)号：US20170098759A1

公开(公告)日：2017-04-06

申请号：US15220719

申请日：2016-07-27

Applicant: Jung-Ik OH ,  Jong-Kyu KIM ,  Jongchul PARK ,  Gwang-Hyun BAEK ,  Kyungrae BYUN ,  Hyun-Woo YANG

Inventor： Jung-Ik OH ,  Jong-Kyu KIM ,  Jongchul PARK ,  Gwang-Hyun BAEK ,  Kyungrae BYUN ,  Hyun-Woo YANG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

公开(公告)号：US20150311253A1

公开(公告)日：2015-10-29

申请号：US14602490

申请日：2015-01-22

Applicant: Young-Seok CHOI ,  Jaehun SEO ,  Hyun-woo YANG ,  Jongchul PARK

Inventor： Young-Seok CHOI ,  Jaehun SEO ,  Hyun-woo YANG ,  Jongchul PARK

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.

Abstract translation: 提供了一种存储器件，其包括在衬底上的存储元件; 覆盖存储元件的侧表面并暴露存储元件的顶表面的保护绝缘图案; 保护绝缘图案上的上模层; 以及位于所述存储元件上的位线，所述位线沿第一方向延伸，所述保护绝缘图案包括覆盖所述存储元件的下侧表面的第一保护绝缘图案; 以及覆盖存储元件的上侧表面并且包括与第一保护绝缘图案不同的材料的第二保护绝缘图案。