公开(公告)号：US07693682B2

公开(公告)日：2010-04-06

申请号：US11933540

申请日：2007-11-01

Applicant: Jeong-Hee Cho ,  Hyun-Tae Kang ,  Jang-Hoon Kim ,  Ki-Hyun Chyun

Inventor： Jeong-Hee Cho ,  Hyun-Tae Kang ,  Jang-Hoon Kim ,  Ki-Hyun Chyun

IPC: G01B5/26

CPC classification number: H01L22/12 ,  G03F7/70625

Abstract: A method for measuring critical dimensions of a pattern using an overlay measuring apparatus is provided. The method includes setting a first scan range, inputting a step pitch for the overlay measuring apparatus, inputting X and Y coordinates of a point on a reticle, and inputting a size of the reference pattern. The method further includes inputting a position of the reference pattern, inputting a second scan range, measuring the size of the reference pattern, and inputting an ideal pattern size. The method still further includes measuring a size and a first Z-axial focus position of a top region of the reference pattern, storing the first Z-axial focus position, measuring a size of the selected pattern of the first wafer using stored reference information, and determining whether the size of the selected pattern is suitable relative to the ideal pattern size.

Abstract translation: 提供了使用覆盖测量装置测量图案的临界尺寸的方法。 该方法包括设置第一扫描范围，输入覆盖测量装置的步距，在掩模版上输入点的X和Y坐标，以及输入参考图案的大小。 该方法还包括输入参考图案的位置，输入第二扫描范围，测量参考图案的尺寸以及输入理想图案尺寸。 该方法还包括测量参考图案的顶部区域的尺寸和第一Z轴焦点位置，存储第一Z轴焦点位置，使用存储的参考信息测量第一晶片的选定图案的尺寸， 以及确定所选图案的尺寸是否适合于所述理想图案尺寸。

公开(公告)号：US07081952B2

公开(公告)日：2006-07-25

申请号：US10718817

申请日：2003-11-24

Applicant: Kye-Weon Kim ,  Chung-Sam Jun ,  Hyun-Tae Kang

Inventor： Kye-Weon Kim ,  Chung-Sam Jun ,  Hyun-Tae Kang

IPC: G01N21/00

CPC classification number: G01N21/95607

Abstract: A method for obtaining an image using a selective combination of wavelengths of light includes dispersing a light in accordance with wavelength bands of the light using a dispersing member, irradiating the dispersed light onto an object to measure reflectivities of the light reflected from the object in accordance with the wavelength bands of the light, comparing reflectivity differences between an objective region and a peripheral region of the object, selecting wavelength bands having the reflectivity differences indicated as either positive values or negative values, adjusting the dispersing member to transmit only the light having the selected wavelength bands, passing light only having the selected wavelength bands through the dispersing member to irradiate the light that has passed through the dispersing member onto the object, taking photographs of the object using the irradiated light, and superposing the photographs of the object to obtain the image of the object.

Abstract translation: 使用光的波长的选择性组合获得图像的方法包括使用分散构件分散根据光的波长带的光，将分散的光照射到物体上，以测量根据物体反射的光的反射率 利用光的波长带，比较物体的目标区域和外围区域之间的反射率差异，选择反射率差异的波长带表示为正值或负值，调节分散构件以仅透射具有 选择的波长带，使仅通过分散构件具有所选波长带的光将通过分散构件的光照射到物体上，使用照射光拍摄物体，并叠加物体的照片，以获得 对象的图像。

公开(公告)号：US20080230929A1

公开(公告)日：2008-09-25

申请号：US12042377

申请日：2008-03-05

Applicant: Jang-ho Shin ,  Chan-hoon Park ,  Jung-Hyeon Lee ,  Suk-joo Lee ,  Hyun-tae Kang ,  Jeong-hee Cho ,  Young-hoon Song

Inventor： Jang-ho Shin ,  Chan-hoon Park ,  Jung-Hyeon Lee ,  Suk-joo Lee ,  Hyun-tae Kang ,  Jeong-hee Cho ,  Young-hoon Song

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an overlay mark of a semiconductor device and a semiconductor device including the overlay mark. The overlay mark includes: reference marks formed in rectangular shapes comprising sides in which fine patterns are formed; and comparison marks formed as rectangular shapes which are smaller than the rectangular shapes of the reference marks and formed of fine patterns, wherein the number of comparison marks is equal to the number of reference marks, wherein the reference marks and the comparison marks are formed on different thin films formed on a semiconductor substrate to be used to inspect alignment states of the different thin films, and the overlay mark reflects an effect of aberration of patterns of memory cells through the fine patterns during a calculation of MR (mis-registration).

Abstract translation: 提供半导体器件的覆盖标记和包括覆盖标记的半导体器件。 覆盖标记包括：形成为包括形成精细图案的侧面的矩形形状的参考标记; 和形成为小于参考标记的矩形形状并由精细图案形成的矩形形状的比较标记，其中比较标记的数量等于参考标记的数量，其中参考标记和比较标记形成在 在半导体衬底上形成的用于检测不同薄膜的取向状态的不同薄膜，并且叠加标记反映了在计算MR（误对准）期间通过精细图案的存储器单元的图案的像差的影响。

公开(公告)号：US20080123108A1

公开(公告)日：2008-05-29

申请号：US11933540

申请日：2007-11-01

Applicant: Jeong-Hee CHO ,  Hyun-Tae KANG ,  Jang-Hoon KIM ,  Ki-Hyun CHYUN

Inventor： Jeong-Hee CHO ,  Hyun-Tae KANG ,  Jang-Hoon KIM ,  Ki-Hyun CHYUN

IPC: G01B11/00

CPC classification number: H01L22/12 ,  G03F7/70625

Abstract: A method for measuring critical dimensions of a pattern using an overlay measuring apparatus is provided. The method includes setting a first scan range, inputting a step pitch for the overlay measuring apparatus, inputting X and Y coordinates of a point on a reticle, and inputting a size of the reference pattern. The method further includes inputting a position of the reference pattern, inputting a second scan range, measuring the size of the reference pattern, and inputting an ideal pattern size. The method still further includes measuring a size and a first Z-axial focus position of a top region of the reference pattern, storing the first Z-axial focus position, measuring a size of the selected pattern of the first wafer using stored reference information, and determining whether the size of the selected pattern is suitable relative to the ideal pattern size.

Abstract translation: 提供了使用覆盖测量装置测量图案的临界尺寸的方法。 该方法包括设置第一扫描范围，输入覆盖测量装置的步距，在掩模版上输入点的X和Y坐标，以及输入参考图案的大小。 该方法还包括输入参考图案的位置，输入第二扫描范围，测量参考图案的尺寸以及输入理想图案尺寸。 该方法还包括测量参考图案的顶部区域的尺寸和第一Z轴焦点位置，存储第一Z轴焦点位置，使用存储的参考信息测量第一晶片的选定图案的尺寸， 以及确定所选图案的尺寸是否适合于所述理想图案尺寸。

公开(公告)号：US06826743B2

公开(公告)日：2004-11-30

申请号：US10233556

申请日：2002-09-04

Applicant: Chan-Hoon Park ,  Bong-Su Cho ,  Hyun-Tae Kang

Inventor： Chan-Hoon Park ,  Bong-Su Cho ,  Hyun-Tae Kang

IPC: G06F1750

CPC classification number: G03F7/70633

Abstract: A semiconductor wafer overlay correction method for an exposure process in a semiconductor fabricating stepper incorporates variations in equipment characteristics with time. The wafer overlay correction method includes measuring an overlay error correction value of a semiconductor wafer that is exposed by the stepper, calculating an overlay error correction value by summing the measured overlay error correction value, a variation in the stepper characteristics that is obtained through an empirical characterization of input changes, and a weighting value obtained from a predetermined plurality of wafer lots, and providing the calculated overlay error correction value to the semiconductor fabricating stepper to control an exposure process of a subsequent wafer lot.

Abstract translation: 用于半导体制造步进机中的曝光处理的半导体晶片覆盖校正方法包括设备特性随时间的变化。 晶片覆盖校正方法包括测量由步进器曝光的半导体晶片的覆盖误差校正值，通过将测量的叠加误差校正值相加来计算叠加误差校正值，通过经验值获得的步进器特性的变化 输入变化的表征以及从预定的多个晶片批次获得的加权值，并将计算出的重叠误差校正值提供给半导体制造步进器，以控制随后的晶片批次的曝光处理。