摘要:
A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.
摘要:
An apparatus and a method for sharing a temperature compensated crystal oscillator (TCXO) of a mobile terminal using a global positioning system (GPS). A communication system processor performs a process for a mobile communication system, computes a frequency variation according to a frequency change and outputs a value corresponding to the computed frequency variation to a system TCXO and a GPS processor. The GPS processor receives and processes a GPS signal, receives the value of the computed frequency variation from the communication system processor, and performs an operation for frequency compensation according to the value.
摘要:
Provided is a data recording medium having improved data recording/storage characteristics and with an improved structure to have a higher data storage capacity, and a method of recording and/or easing data using the same. The data recording medium may include a Cu electrode layer on a substrate, and a data recording layer formed of a compound including a metal and at least one non-metal selected from the group consisting of S, Se, and Te, on the Cu electrode layer. Data is recordable to or erasable from the data recording layer by changing the resistance of the data recording layer by diffusing Cu ions from the Cu electrode layer to the data recording layer or by erasing Cu ions from the data recording layer by diffusing Cu ions from the data recording layer back to the Cu electrode layer, according to a voltage pulse applied to the data recording layer.
摘要:
An apparatus and a method for generating and outputting stereoscopic images. A user can select either a barrier mode and an interlaced mode. In the barrier mode, images are generated in the barrier scheme, whereas in the interlaced mode, images are generated in the interlaced scheme. In a case where the user selects the interlaced mode, when the images are detected with the left and right camera sensors, the images are rotated by −90 degrees and are then detected. Subsequently, stereoscopic images are generated from rotated images according to the barrier scheme, and generated images are stored along with information on a currently set image generation mode. Next, when the user desires to output the stored stereoscopic images through an interlaced output device for providing stereoscopic images in the interlaced scheme, the stored stereoscopic images are rotated by 90 degrees, and the rotated stereoscopic images are provided to the interlaced output device. Accordingly, without an additional configuration unit for a special purpose, the stereoscopic images stored in the barrier scheme can be output as normal stereoscopic images through the interlaced output device.
摘要:
A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.
摘要:
Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.
摘要:
An inkjet printhead heater including a plurality of unit heater layers each including a first nitride layer and a second nitride layer stacked on the first nitride layer, and an inkjet printhead including the heater, and a method of manufacturing an inkjet printhead heater including stacking a plurality of unit heater layers, each including a substrate having a first nitride layer and a second nitride layer stacked on the first nitride layer.
摘要:
An apparatus and a method for generating and outputting stereoscopic images. A user can select either a barrier mode and an interlaced mode. In the barrier mode, images are generated in the barrier scheme, whereas in the interlaced mode, images are generated in the interlaced scheme. In a case where the user selects the interlaced mode, when the images are detected with the left and right camera sensors, the images are rotated by −90 degrees and are then detected. Subsequently, stereoscopic images are generated from rotated images according to the barrier scheme, and generated images are stored along with information on a currently set image generation mode. Next, when the user desires to output the stored stereoscopic images through an interlaced output device for providing stereoscopic images in the interlaced scheme, the stored stereoscopic images are rotated by 90 degrees, and the rotated stereoscopic images are provided to the interlaced output device. Accordingly, without an additional configuration unit for a special purpose, the stereoscopic images stored in the barrier scheme can be output as normal stereoscopic images through the interlaced output device.
摘要:
A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound layer disposed on the first Cu compound layer; and an upper electrode disposed on the second Cu compound layer.
摘要:
An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.