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    FLOAT-CONTROLLED WATER INFLOW SWITCHING DEVICE FOR WATER PUMP
    2.
    发明申请
    FLOAT-CONTROLLED WATER INFLOW SWITCHING DEVICE FOR WATER PUMP 审中-公开
    用于水泵的FLOAT控制水流开关装置

    公开(公告)号：US20100139784A1

    公开(公告)日：2010-06-10

    申请号：US12329645

    申请日：2008-12-08

    Applicant: I-JEN HUANG

    Inventor： I-JEN HUANG

    IPC: F16K31/18

    CPC classification number: F16K31/126 ,  Y10T137/7358

    Abstract: A float-controlled water inflow switching device is provided for use with a water pump for pressurizing tap water and functions to safely collect and re-use of water drainage from the pump and associated piping for pressure relief purposes. The switching device includes a container arranged in water supply piping of the pump and forming a water return port connected to a water return pipe from the pump. The container includes a float arranged therein to selectively close/open a tap water supply port and has a water outlet port connected to the water in-feed end of the pump to directly supply tap water to the pump or to alternatively supply water contained in the container to the pump by means of automatic switching realized by closing the tap water supply port by the movement of the float at the time when the water inside the container reaches a preset water level.

    Abstract translation: 提供了一种浮子控制的水流量切换装置，用于与水泵一起用于对自来水加压并且用于从泵和相关联的管道安全地收集和重新使用排水以达到压力消除目的。 切换装置包括：设置在泵的供水管道中的容器，并且形成从泵连接到回水管的回水口。 容器包括布置在其中的浮子，用于选择性地关闭/打开自来水供应端口，并具有连接到泵的供水端的出水端口，以直接向泵供应自来水或交替地供应包含在泵 通过在容器内的水达到预设水位时浮子的移动来关闭自来水供应口而实现的自动切换实现容器到泵的容器。

    Multi-bit flash memory and reading method thereof
    3.
    发明授权
    Multi-bit flash memory and reading method thereof 有权
    多位闪存及其读取方法

    公开(公告)号：US07643337B2

    公开(公告)日：2010-01-05

    申请号：US11826574

    申请日：2007-07-17

    Applicant: Yung-Feng Lin ,  Nian-Kai Zous ,  I-Jen Huang ,  Yin-Jen Chen

    Inventor： Yung-Feng Lin ,  Nian-Kai Zous ,  I-Jen Huang ,  Yin-Jen Chen

    IPC: G11C7/00

    CPC classification number: G11C11/5642 ,  G11C2211/5634

    Abstract: A multi-bit flash memory and a reading method thereof. Multiple reference memory cells for saving reserved data are provided to operate together with multiple data memory cells. Before the data memory cells are read, data stored in the reference memory cell is sensed based on a present reference current. Then, a value of a new reference current for reading the data memory cells is determined according to a difference between the sensed data and the reserved data.

    Abstract translation: 一种多位闪存及其读取方法。 提供用于保存预留数据的多个参考存储器单元以与多个数据存储单元一起操作。 在读取数据存储单元之前，基于当前的参考电流感测存储在参考存储器单元中的数据。 然后，根据感测数据和保留数据之间的差异来确定读取数据存储单元的新参考电流的值。

    MULTI-BIT FLASH MEMORY AND READING METHOD THEREOF
    8.
    发明申请
    MULTI-BIT FLASH MEMORY AND READING METHOD THEREOF 有权
    多位闪存及其读取方法

    公开(公告)号：US20100085809A1

    公开(公告)日：2010-04-08

    申请号：US12636095

    申请日：2009-12-11

    Applicant: Yung-Feng LIN ,  Nian-Kai Zous ,  I-Jen Huang ,  Yin-Jen Chen

    Inventor： Yung-Feng LIN ,  Nian-Kai Zous ,  I-Jen Huang ,  Yin-Jen Chen

    IPC: G11C16/04 ,  G11C16/06

    CPC classification number: G11C11/5642 ,  G11C2211/5634

    Abstract: A multi-bit flash memory and a reading method thereof. Multiple reference memory cells for saving reserved data are provided to operate together with multiple data memory cells. Before the data memory cells are read, data stored in the reference memory cell is sensed based on a present reference current. Then, a value of a new reference current for reading the data memory cells is determined according to a difference between the sensed data and the reserved data.

    Abstract translation: 一种多位闪存及其读取方法。 提供用于保存预留数据的多个参考存储器单元以与多个数据存储单元一起操作。 在读取数据存储单元之前，基于当前的参考电流感测存储在参考存储器单元中的数据。 然后，根据感测数据和保留数据之间的差异来确定读取数据存储单元的新参考电流的值。

    METHOD FOR PROGRAMMING A MULTILEVEL MEMORY
    9.
    发明申请
    METHOD FOR PROGRAMMING A MULTILEVEL MEMORY 有权
    编程多个存储器的方法

    公开(公告)号：US20090303792A1

    公开(公告)日：2009-12-10

    申请号：US12544025

    申请日：2009-08-19

    Applicant: Hsin-Yi Ho ,  Nian-Kai Zous ,  I-Jen Huang ,  Yung-Feng Lin

    Inventor： Hsin-Yi Ho ,  Nian-Kai Zous ,  I-Jen Huang ,  Yung-Feng Lin

    IPC: G11C16/04

    CPC classification number: G11C11/5628 ,  G11C11/5671 ,  G11C2211/5621

    Abstract: A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted programmed state into programmed bits by using a Vd bias BL; (b) ending this method if each bit of the memory has a Vt level not lower than the PV level of the targeted programmed state, otherwise, continuing the step (c); and (c) setting BL=BL+K1 and repeating the step (a) if each of the programmed bits has a Vt level lower than the PV level, while setting BL=BL−K2, and repeating the step (a) if at least one of the programmed bits has a Vt level not lower than the PV level.

    Abstract translation: 提供了一种用于编程MLC存储器的方法。 MLC存储器有多个位，每个位都有多个编程状态。 每个编程状态具有第一PV级别。 该方法包括（a）通过使用Vd偏置BL将具有低于目标编程状态的PV电平的Vt电平的存储器的位编程为编程位; （b）如果存储器的每个位的Vt电平不低于目标编程状态的PV电平，则结束该方法，否则继续步骤（c）; 以及（c）设定BL = BL + K1，并且如果每个编程的比特都具有低于PV水平的Vt级别，而设置BL = BL-K2，并重复步骤（a），如果在 至少一个编程位的Vt电平不低于PV电平。

    Method for programming a multilevel memory
    10.
    发明申请
    Method for programming a multilevel memory 有权
    多级存储器编程方法

    公开(公告)号：US20080310223A1

    公开(公告)日：2008-12-18

    申请号：US11812033

    申请日：2007-06-14

    Applicant: Hsin-Yi Ho ,  Nian-Kai Zous ,  I-Jen Huang ,  Yung-Feng Lin

    Inventor： Hsin-Yi Ho ,  Nian-Kai Zous ,  I-Jen Huang ,  Yung-Feng Lin

    IPC: G11C16/04

    CPC classification number: G11C11/5628 ,  G11C11/5671 ,  G11C2211/5621

    Abstract: A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted programmed state into programmed bits by using a Vd bias BL; (b) ending this method if each bit of the memory has a Vt level not lower than the PV level of the targeted programmed state, otherwise, continuing the step (c); and (c) setting BL=BL+K1 and repeating the step (a) if each of the programmed bits has a Vt level lower than the PV level, while setting BL=BL−K2, and repeating the step (a) if at least one of the programmed bits has a Vt level not lower than the PV level.

    Abstract translation: 提供了一种用于编程MLC存储器的方法。 MLC存储器有多个位，每个位都有多个编程状态。 每个编程状态具有第一PV级别。 该方法包括（a）通过使用Vd偏置BL将具有低于目标编程状态的PV电平的Vt电平的存储器的位编程为编程位; （b）如果存储器的每个位的Vt电平不低于目标编程状态的PV电平，则结束该方法，否则继续步骤（c）; 以及（c）设定BL = BL + K1，并且如果每个编程的比特都具有低于PV水平的Vt级别，而设置BL = BL-K2，并重复步骤（a），如果在 至少一个编程位的Vt电平不低于PV电平。

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