摘要:
An organic light-emitting apparatus includes a substrate; a first electrode formed on the substrate, where the first electrode is a cathode, an electron injection layer formed to contact an upper surface of the first electrode and including Mg, an intermediate layer formed on the electron injection layer and including an organic emission layer, and a second electrode which is formed on the intermediate layer and is an anode.
摘要:
A contaminant cleaning device includes a stage configured to house a substrate; an imaging means configured to obtain an image of a contaminant on the substrate; a control means configured to recognize the image and configured to generate a control signal in accordance with the recognized image; a UV generating means; an irradiation shape forming unit configured to selectively block a passage of UV radiated from the UV generating means to make a UV irradiated shape correspond to a shape of the image recognized in the control means; and an interrupter configured to receive a control signal from the control means to block or allow passage of UV from the UV generating means, wherein the stage is configured to move in accordance with a control signal from the control means to enable a contaminant on the substrate to be positioned in the area to which UV is irradiated.
摘要:
The present invention relates to a method of measuring the thickness of a thin film layer using an infrared thermal imaging system. The object of the present invention is to provide a method of measuring the thickness of a thin film layer fast in such a way as to obtain the two-dimensional (2-D) thickness distribution of the thin film layer at one time by measuring infrared spontaneous light emitted from a target surface using an infrared imaging camera. The present invention includes a means for measuring the thickness of a thin film coated on a flat base surface, which outputs the thickness of the thin film layer based on the emissivity of the base surface and the coating layer and the intensity of the infrared spontaneous light that is measured on the flat target surface and converted into temperature, and a means for measuring the thickness of a thin film layer coated on a curved base surface, which outputs the thickness of the thin film layer while considering directional emissivity attributable to the materials of the base surface and the coating layer.
摘要:
The present invention relates to a method of measuring the thickness of a thin film layer using an infrared thermal imaging system. The object of the present invention is to provide a method of measuring the thickness of a thin film layer fast in such a way as to obtain the two-dimensional (2-D) thickness distribution of the thin film layer at one time by measuring infrared spontaneous light emitted from a target surface using an infrared imaging camera. The present invention includes a means for measuring the thickness of a thin film coated on a flat base surface, which outputs the thickness of the thin film layer based on the emissivity of the base surface and the coating layer and the intensity of the infrared spontaneous light that is measured on the flat target surface and converted into temperature, and a means for measuring the thickness of a thin film layer coated on a curved base surface, which outputs the thickness of the thin film layer while considering directional emissivity attributable to the materials of the base surface and the coating layer.
摘要:
An organic light-emitting apparatus includes a substrate; a first electrode formed on the substrate, where the first electrode is a cathode, an electron injection layer formed to contact an upper surface of the first electrode and including Mg, an intermediate layer formed on the electron injection layer and including an organic emission layer, and a second electrode which is formed on the intermediate layer and is an anode.
摘要:
A method of manufacturing an organic light-emitting display device, which simplifies fabrication processes of the organic light-emitting display device and improves manufacturing yield. This method includes preparing a substrate that has a number of first regions and a second region surrounding the first regions. The substrate is conveyed into a chamber. An organic emission layer is formed in a direction on a surface of the substrate. A first metal layer is formed on the organic emission layer so as to correspond to the first regions, and the organic emission layer formed on the second region is removed.