公开(公告)号：US20250043382A1

公开(公告)日：2025-02-06

申请号：US18716881

申请日：2022-10-05

Applicant: JX ADVANCED METALS CORPORATION

Inventor： Naoki HIGUCHI

IPC: C22B3/02 ,  C22B1/02 ,  C22B7/00 ,  H01M10/54

Abstract: A method for bringing battery powder resulting from lithium ion battery waste into contact with an acidic leaching solution 21 inside a leaching vessel 1 to leach metals contained in the battery powder into the acidic leach solution 21, wherein the leaching vessel includes a movable member operably disposed at a position above a liquid surface 22 of the acidic leaching solution 21 stored therein, and the method includes destroying froth Ba generated in the acidic leaching solution 21 by operation of the movable member.

公开(公告)号：US12198911B2

公开(公告)日：2025-01-14

申请号：US18145400

申请日：2022-12-22

Applicant: JX Advanced Metals Corporation

Inventor： Atsushi Sato ,  Hideo Takami ,  Yuichiro Nakamura

IPC: H01J37/34 ,  B22F1/05 ,  B22F1/12 ,  B22F3/14 ,  B22F3/15 ,  C22C5/04 ,  C22C33/02 ,  C22C38/00 ,  C23C14/34 ,  G11B5/851 ,  H01F41/18

Abstract: Provided is a sputtering target which can lower a heat treatment temperature for ordering a Fe—Pt magnetic phase and can suppress generation of particles during sputtering. The sputtering target is a nonmagnetic material-dispersed sputtering target containing Fe, Pt and Ge. The sputtering target includes at least one magnetic phase satisfying a composition represented by (Fe1-αPtα)1-βGeβ, as expressed in an atomic ratio for Fe, Pt and Ge, in which α and β represent numbers meeting 0.35≤α≤0.55 and 0.05≤β≤0.2, respectively. The magnetic phase has a ratio (SGe30mass %/SGe) of 0.5 or less. The ratio (SGe30mass %/SGe) is an average area ratio of Ge-based alloy phases containing a Ge concentration of 30% by mass or more (SGe30mass %) to an area ratio of Ge (SGe) calculated from the entire composition of the sputtering target, in element mapping by EPMA of a polished surface obtained by polishing a cross section perpendicular to a sputtering surface of the sputtering target.

公开(公告)号：US12090518B2

公开(公告)日：2024-09-17

申请号：US17599236

申请日：2020-03-27

Applicant: JX ADVANCED METALS CORPORATION

Inventor： Katsushi Aoki ,  Hidetoshi Sasaoka

IPC: B09B3/35 ,  B02C23/20 ,  B07B4/02 ,  B07B4/08 ,  B07B9/00 ,  B09B101/17

CPC classification number: B07B4/02 ,  B02C23/20 ,  B07B4/08 ,  B07B9/00 ,  B09B3/35 ,  B09B2101/17

Abstract: Provided is a method for processing electronic and electrical device component scrap, which can improve an efficiency of sorting of raw materials fed to the smelting step from electronic and electrical device component scrap, and reduce losses of valuable metals. A method for processing electronic and electrical device component scrap which includes sorting electronic and electrical device component scrap by wind powder sorting to remove plate-shaped materials containing valuable metals included in the electronic and electrical device component scrap, and then sorting the resulting sorted objects by magnetic sorting.

公开(公告)号：US20240417845A1

公开(公告)日：2024-12-19

申请号：US18265585

申请日：2022-10-19

Applicant: JX ADVANCED METALS CORPORATION

Inventor： Yusuke Sato ,  Takanori Sato ,  Kengo Kaminaga

IPC: C23C14/34 ,  C22C21/12

Abstract: There is provided a Cu—Al binary alloy sputtering target with a high Al content while suppressing occurrence of cracks on the sputtering target, and a method for manufacturing the same. A sputtering target is composed of a sintered body containing a binary alloy of Cu and Al, the rest being inevitable impurities, wherein a content (at %) of Cu and Al satisfies a relational expression of 0.48≤Al/(Cu+Al)≤0.70, and wherein a relative density is 95% or more.

公开(公告)号：US20250043384A1

公开(公告)日：2025-02-06

申请号：US18717542

申请日：2022-10-05

Applicant: JX Advanced Metals Corporation

Inventor： Koki YANAGAWA

IPC: C22B3/08 ,  H01M10/54

Abstract: A method for bringing battery powder resulting from lithium ion battery waste into contact with an acidic leaching solution 21 inside a leaching vessel 1 to leach metals contained in the battery powder into the acidic leach solution 21, wherein the leaching vessel 1 includes a porous member 2 disposed to cover a liquid surface 22 of the acidic leaching solution 21 stored therein at a position above the liquid surface 22, the method includes destroying froth Ba generated in the acidic leaching solution 21 by bringing them into contact with the porous member 2 during leaching of the metals inside the leaching vessel 1, and the porous member 2 has an opening of 12 mm or less.

公开(公告)号：US12217967B2

公开(公告)日：2025-02-04

申请号：US17600226

申请日：2020-12-23

Applicant: JX ADVANCED METALS CORPORATION

Inventor： Shunsuke Oka ,  Kenji Suzuki ,  Hideaki Hayashi

IPC: H01L21/304 ,  H01L21/02

Abstract: Provided is an indium phosphide substrate which has suppressed sharpness of a wafer edge when polishing is carried out from the back surface of the wafer by a method such as back lapping. An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°

公开(公告)号：US12132289B2

公开(公告)日：2024-10-29

申请号：US17288403

申请日：2020-01-06

Applicant: JX Advanced Metals Corporation

Inventor： Masahiro Takahata ,  Hideaki Fukuyo ,  Toru Imori ,  Koichi Takemoto

IPC: H01S3/038 ,  C22F1/08 ,  H01S3/225

CPC classification number: H01S3/0388 ,  C22F1/08 ,  H01S3/2251 ,  H01S3/2256

Abstract: A copper electrode material comprising Cu and unavoidable impurities, wherein the content of the unavoidable impurities is 1 ppm by mass or less and the average crystal grain diameter is 100 μm or less. A copper-containing electrode material having improved corrosion resistance is provided by the copper electrode material.

公开(公告)号：US12162040B2

公开(公告)日：2024-12-10

申请号：US17605419

申请日：2020-04-22

Applicant: JX ADVANCED METALS CORPORATION

Inventor： Katsushi Aoki

IPC: B07C5/342 ,  B07C5/10 ,  B07C5/344 ,  B07C5/36 ,  B09B5/00 ,  B25J9/00 ,  B25J9/16 ,  B25J11/00 ,  B25J15/00 ,  B25J15/02 ,  C22B1/00 ,  C22B7/00 ,  G06T7/00 ,  G06T7/90

Abstract: Provided is a method for processing electronic and electrical device component scrap according to an embodiment of the present invention includes a smelting raw material sorting step of sorting a processing raw material containing valuable metals processable in a smelting step from the electronic and electrical device component scrap, wherein the method comprises removing lump copper wire scrap contained in the electronic and electrical device component scrap using a parallel link robot.