公开(公告)号：US10008666B2

公开(公告)日：2018-06-26

申请号：US14396406

申请日：2012-07-31

申请人： Hans S Cho ,  Janice H Nickel ,  R. Stanley Williams ,  Jaesung Roh ,  Jinwon Park ,  Choi Hyejung ,  Moonsig Joo ,  Jiwon Moon ,  Changgoo Lee ,  Yongsun Sohn ,  Jeongtae Kim

发明人： Hans S Cho ,  Janice H Nickel ,  R. Stanley Williams ,  Jaesung Roh ,  Jinwon Park ,  Choi Hyejung ,  Moonsig Joo ,  Jiwon Moon ,  Changgoo Lee ,  Yongsun Sohn ,  Jeongtae Kim

IPC分类号： H01L45/00 ,  H01L27/10 ,  H01L27/24

CPC分类号： H01L45/1233 ,  H01L27/101 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1641 ,  H01L45/1675 ,  H01L45/1691

摘要： Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.

公开(公告)号：US20150076438A1

公开(公告)日：2015-03-19

申请号：US14396406

申请日：2012-07-31

申请人： Hans S. Cho ,  Janice H. Nickel ,  R. Stanley Williams ,  Jaesung Roh ,  Jinwon Park ,  Choi Hyejung ,  Moonsig Joo ,  Jiwon Moon ,  Changgoo Lee ,  Yongsun Sohn ,  Jeongtae Kim

发明人： Hans S. Cho ,  Janice H. Nickel ,  R. Stanley Williams ,  Jaesung Roh ,  Jinwon Park ,  Choi Hyejung ,  Moonsig Joo ,  Jiwon Moon ,  Changgoo Lee ,  Yongsun Sohn ,  Jeongtae Kim

IPC分类号： H01L45/00

CPC分类号： H01L45/1233 ,  H01L27/101 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1641 ,  H01L45/1675 ,  H01L45/1691

摘要： Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.

摘要翻译： 本公开的实例包括非易失性电阻存储器单元及其形成方法。 非易失性电阻性存储单元的示例包括在第一电极上形成为垂直延伸结构的非易失性电阻性存储单元的第一部分，其中第一部分包括跨越垂直宽度的至少一个阻聚材料 延伸结构。 非易失性电阻性存储单元还包括在第一部分的至少一个侧壁上形成为垂直延伸的忆阻材料结构的第二部分。