公开(公告)号：US20100098882A1

公开(公告)日：2010-04-22

申请号：US12581600

申请日：2009-10-19

申请人： Dmitry Lubomirsky ,  Jang Gyoo Yang ,  Qiwei Liang ,  Matthew L. Miller ,  James Santosa ,  Xinglong Chen ,  Paul F. Smith

发明人： Dmitry Lubomirsky ,  Jang Gyoo Yang ,  Qiwei Liang ,  Matthew L. Miller ,  James Santosa ,  Xinglong Chen ,  Paul F. Smith

IPC分类号： C23C16/50 ,  C23C16/00

CPC分类号： C23C16/4405 ,  H01J37/32036 ,  H01J37/32045 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32357

摘要： Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box.

摘要翻译： 提供了用于处理基板和处理处理室的装置和方法。 在一个实施例中，提供一种用于处理包括电源，耦合到电源的开关盒和具有可在第一位置和第二位置之间互换的开关的开关盒的基板的设备，耦合到开关的第一匹配盒 耦合到第一匹配盒的等离子体发生器，耦合到开关盒的第二匹配盒以及耦合到第二匹配盒的远程等离子体源。

公开(公告)号：US07964040B2

公开(公告)日：2011-06-21

申请号：US12265641

申请日：2008-11-05

申请人： Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

发明人： Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

IPC分类号： B08B5/00

CPC分类号： H01L21/67069 ,  C23C16/4412 ,  H01J37/32834 ,  H01J37/32862 ,  Y10S134/902 ,  Y10T137/85978 ,  Y10T137/87571

摘要： An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.

摘要翻译： 描述了用于从半导体制造室清洗流体的排气前沿。 前排可以包括独立地联接到室的第一，第二和第三端口。 还描述了包括具有第一，第二和第三接口端口的衬底室的半导体制造系统。 该系统还可以包括具有第一，第二和第三端口的多端口前级线，其中第一前级线路端口耦合到第一接口端口，第二前级线路端口耦合到第二接口端口，并且第三前级端口 耦合到第三接口端口。 该系统还可以包括耦合到多端口前级管线的排气真空。

公开(公告)号：US20090120464A1

公开(公告)日：2009-05-14

申请号：US12265641

申请日：2008-11-05

申请人： Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

发明人： Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

IPC分类号： C23C16/00 ,  G05D7/00

CPC分类号： H01L21/67069 ,  C23C16/4412 ,  H01J37/32834 ,  H01J37/32862 ,  Y10S134/902 ,  Y10T137/85978 ,  Y10T137/87571

摘要： An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.

摘要翻译： 描述了用于从半导体制造室清洗流体的排气前沿。 前排可以包括独立地联接到室的第一，第二和第三端口。 还描述了包括具有第一，第二和第三接口端口的衬底室的半导体制造系统。 该系统还可以包括具有第一，第二和第三端口的多端口前级线，其中第一前级线路端口耦合到第一接口端口，第二前级线路端口耦合到第二接口端口，并且第三前级端口 耦合到第三接口端口。 该系统还可以包括耦合到多端口前级管线的排气真空。