公开(公告)号：US06884317B2

公开(公告)日：2005-04-26

申请号：US09771673

申请日：2001-01-29

申请人： Hessel Sprey ,  Arjen Benjamin Storm ,  Jan Willem Hubert Maes

发明人： Hessel Sprey ,  Arjen Benjamin Storm ,  Jan Willem Hubert Maes

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/67069 ,  H01L21/31116

摘要： Method for etching a substrate wherein, after placing in an etching chamber, said substrate is treated with a mixture of HF and acetic acid. Acetic acid is introduced into the chamber first, followed by the hydrogen fluoride. Hydrogen fluoride is introduced via an intermediate stage during which the hydrogen fluoride is stored in an auxiliary chamber. By this means back-flow of a corrosive mixture consisting of hydrogen fluoride and acetic acid into the piping assembly for hydrogen fluoride is prevented and, thus, the life of the piping assembly concerned is appreciably prolonged and metal contamination on substrate treated later is prevented.

摘要翻译： 蚀刻基板的方法，其中在放置在蚀刻室中后，用HF和乙酸的混合物处理所述基板。 首先将乙酸引入室内，然后加入氟化氢。 通过氟化氢储存在辅助室中的中间阶段引入氟化氢。 通过这种方式，防止由氟化氢和乙酸组成的腐蚀性混合物回流到氟化氢的管道组件中，因此有关管道组件的使用寿命明显延长，并且防止后处理的基板上的金属污染。