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    Ion milling method
    1.
    发明授权
    Ion milling method 失效
    离子研磨法

    公开(公告)号：US4869780A

    公开(公告)日：1989-09-26

    申请号：US178711

    申请日：1988-04-07

    申请人： Jane J. J. Yang ,  William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Moshe Sergant

    发明人： Jane J. J. Yang ,  William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Moshe Sergant

    IPC分类号： H01L21/263

    CPC分类号： H01L21/2633

    摘要： An ion milling method is disclosed that provides a manufacturing technique for mass producing microscopic surface features using a wide variety of media that includes semiconductors, metals, and glasses. In the preferred embodiment, vertical and 45 degree mirrors are formed simultaneously in semiconductor laser diodes in order to produce monolithic two dimensional arrays of surface emitting lasers. Standard double heterostructure semiconductor laser diodes are first grown on a wafer using metalorganic chemical vapor deposition techniques. An ion milling gun is oriented at a particular angle from the longitudinal axis of the active layer of the laser and emits a stream of atomic particles toward the lasers producing a generally two sided cut or notch that extends downward from the top surface of the semiconductor laser and traverses the active layer. The two sides of the cut consist of a vertical face that is perpendicular to the active layer and an inclined mirror surface that connects to the bottom of the vertical face and the slopes back upward to the top of the laser. Although the preferred utilization of this invention is the production of high power semiconductor laser arrays and subsequent wafer scale integration, the ion milling technique may be employed to construct a wide variety of micro-miniature radiation interfaces, reflectors, transmitters, or absorbers. Virtually any surface that requires a specifically determined configuration of uniform topography of atomic proportions may be produced.

    摘要翻译： 公开了一种离子铣削方法，其提供使用包括半导体，金属和玻璃的各种介质大规模生产微观表面特征的制造技术。 在优选实施例中，在半导体激光二极管中同时形成垂直和45度反射镜，以便产生表面发射激光器的单片二维阵列。 首先使用金属有机化学气相沉积技术在晶片上生长标准双异质结半导体激光二极管。 离子铣刀从激光器的有源层的纵向轴线以特定的角度定向，并且向激光器发射原子粒子流，从而产生从半导体激光器的顶表面向下延伸的大致双面切割或凹口 并穿过活动层。 切割的两侧包括垂直于有源层的垂直面和连接到垂直面的底部并且倾斜回到激光顶部的倾斜镜面。 虽然本发明的优选利用是生产高功率半导体激光器阵列和随后的晶片级整合，但是可以采用离子铣削技术来构造各种微型微型辐射接口，反射器，发射器或吸收器。 实际上可以产生需要具有原子比例的均匀地形的具体确定构型的任何表面。

    Controlled far-field pattern selection in diffraction-coupled semiconductor laser arrays
    2.
    发明授权
    Controlled far-field pattern selection in diffraction-coupled semiconductor laser arrays 失效
    衍射耦合半导体激光器阵列中的受控远场图案选择

    公开(公告)号：US4764935A

    公开(公告)日：1988-08-16

    申请号：US35108

    申请日：1987-04-06

    申请人： Jaroslava Z. Wilcox ,  Michael Jansen ,  Arnold H. Silver ,  Jane J. J. Yang ,  William W. Simmons

    发明人： Jaroslava Z. Wilcox ,  Michael Jansen ,  Arnold H. Silver ,  Jane J. J. Yang ,  William W. Simmons

    IPC分类号： H01S5/062 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/4068 ,  H01S5/06243

    摘要： A diffraction-coupled semiconductor laser array, and a related method for its operation, the array structure having a diffraction section that is electrically controllable independently of a waveguide section having multiple laser channels. Above a critical level of injected gain in the diffraction region, and with appropriate selection of channel and diffraction region dimensions, stable operation in the in-phase supermode results, with adjacent lasers operating in phase and a single-lobed far-field distribution pattern being produced. Below the critical level of injected gain, the out-of-phase supermode or multimode operation is favored and the narrow single peak of the far-field pattern is no longer present. This mode switching can be used to rapidly modulate operation of the array without directly switching it on and off.

    摘要翻译： 衍射耦合半导体激光器阵列及其操作的相关方法，该阵列结构具有独立于具有多个激光通道的波导部分可电控制的衍射部分。 在衍射区域中注入增益的临界水平以及通道和衍射区域尺寸的适当选择之后，同相超声波中的稳定运行结果是相邻的激光器同相工作，单裂纹远场分布模式是 生产。 低于注入增益的临界水平，有利于异相超模式或多模式运算，远场模式的窄单峰不再存在。 该模式切换可用于快速调制阵列的操作，而无需直接打开和关闭。