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57 条记录 (耗时 0.033 秒)

    Controlled far-field pattern selection in diffraction-coupled semiconductor laser arrays
    1.
    发明授权
    Controlled far-field pattern selection in diffraction-coupled semiconductor laser arrays 失效
    衍射耦合半导体激光器阵列中的受控远场图案选择

    公开(公告)号：US4764935A

    公开(公告)日：1988-08-16

    申请号：US35108

    申请日：1987-04-06

    申请人： Jaroslava Z. Wilcox ,  Michael Jansen ,  Arnold H. Silver ,  Jane J. J. Yang ,  William W. Simmons

    发明人： Jaroslava Z. Wilcox ,  Michael Jansen ,  Arnold H. Silver ,  Jane J. J. Yang ,  William W. Simmons

    IPC分类号： H01S5/062 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/4068 ,  H01S5/06243

    摘要： A diffraction-coupled semiconductor laser array, and a related method for its operation, the array structure having a diffraction section that is electrically controllable independently of a waveguide section having multiple laser channels. Above a critical level of injected gain in the diffraction region, and with appropriate selection of channel and diffraction region dimensions, stable operation in the in-phase supermode results, with adjacent lasers operating in phase and a single-lobed far-field distribution pattern being produced. Below the critical level of injected gain, the out-of-phase supermode or multimode operation is favored and the narrow single peak of the far-field pattern is no longer present. This mode switching can be used to rapidly modulate operation of the array without directly switching it on and off.

    摘要翻译： 衍射耦合半导体激光器阵列及其操作的相关方法，该阵列结构具有独立于具有多个激光通道的波导部分可电控制的衍射部分。 在衍射区域中注入增益的临界水平以及通道和衍射区域尺寸的适当选择之后，同相超声波中的稳定运行结果是相邻的激光器同相工作，单裂纹远场分布模式是 生产。 低于注入增益的临界水平，有利于异相超模式或多模式运算，远场模式的窄单峰不再存在。 该模式切换可用于快速调制阵列的操作，而无需直接打开和关闭。

    Ion milling method
    3.
    发明授权
    Ion milling method 失效
    离子研磨法

    公开(公告)号：US4869780A

    公开(公告)日：1989-09-26

    申请号：US178711

    申请日：1988-04-07

    申请人： Jane J. J. Yang ,  William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Moshe Sergant

    发明人： Jane J. J. Yang ,  William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Moshe Sergant

    IPC分类号： H01L21/263

    CPC分类号： H01L21/2633

    摘要： An ion milling method is disclosed that provides a manufacturing technique for mass producing microscopic surface features using a wide variety of media that includes semiconductors, metals, and glasses. In the preferred embodiment, vertical and 45 degree mirrors are formed simultaneously in semiconductor laser diodes in order to produce monolithic two dimensional arrays of surface emitting lasers. Standard double heterostructure semiconductor laser diodes are first grown on a wafer using metalorganic chemical vapor deposition techniques. An ion milling gun is oriented at a particular angle from the longitudinal axis of the active layer of the laser and emits a stream of atomic particles toward the lasers producing a generally two sided cut or notch that extends downward from the top surface of the semiconductor laser and traverses the active layer. The two sides of the cut consist of a vertical face that is perpendicular to the active layer and an inclined mirror surface that connects to the bottom of the vertical face and the slopes back upward to the top of the laser. Although the preferred utilization of this invention is the production of high power semiconductor laser arrays and subsequent wafer scale integration, the ion milling technique may be employed to construct a wide variety of micro-miniature radiation interfaces, reflectors, transmitters, or absorbers. Virtually any surface that requires a specifically determined configuration of uniform topography of atomic proportions may be produced.

    摘要翻译： 公开了一种离子铣削方法，其提供使用包括半导体，金属和玻璃的各种介质大规模生产微观表面特征的制造技术。 在优选实施例中，在半导体激光二极管中同时形成垂直和45度反射镜，以便产生表面发射激光器的单片二维阵列。 首先使用金属有机化学气相沉积技术在晶片上生长标准双异质结半导体激光二极管。 离子铣刀从激光器的有源层的纵向轴线以特定的角度定向，并且向激光器发射原子粒子流，从而产生从半导体激光器的顶表面向下延伸的大致双面切割或凹口 并穿过活动层。 切割的两侧包括垂直于有源层的垂直面和连接到垂直面的底部并且倾斜回到激光顶部的倾斜镜面。 虽然本发明的优选利用是生产高功率半导体激光器阵列和随后的晶片级整合，但是可以采用离子铣削技术来构造各种微型微型辐射接口，反射器，发射器或吸收器。 实际上可以产生需要具有原子比例的均匀地形的具体确定构型的任何表面。

    Two-dimensional integrated laser array
    5.
    发明授权
    Two-dimensional integrated laser array 失效
    二维集成激光阵列

    公开(公告)号：US5025451A

    公开(公告)日：1991-06-18

    申请号：US424424

    申请日：1989-10-20

    申请人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

    发明人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

    IPC分类号： G02B6/42 ,  H01S5/18 ,  H01S5/40 ,  H01S5/42

    CPC分类号： H01S5/18 ,  G02B6/4249 ,  H01S5/42 ,  H01S5/4006 ,  H01S5/4031 ,  H01S5/4068 ,  H01S5/4075

    摘要： A two-dimensional integrated laser array having a plurality of surface-emitting laser arrays and a plurality of waveguides for optically coupling the individual laser arrays together. Each surface-emitting laser array includes a plurality of injection lasers which are evanescently coupled together in order to emit a single beam of light. The coupling provided by the waveguides causes the surface-emitting laser arrays to operate in phase and at the same wavelength as an external master oscillator. Therefore, the surface-emitting laser arrays generate coherent beams of light, which are combined and focused by a micro-lens. The output of the micro-lens is a single, coherent high-power optical beam which is emitted perpendicular to the two-dimensional integrated laser array.

    摘要翻译： 具有多个表面发射激光器阵列和用于将各个激光器阵列光学耦合在一起的多个波导的二维集成激光器阵列。 每个表面发射激光器阵列包括多个注入激光器，其消逝地耦合在一起以发射单个光束。 由波导提供的耦合导致表面发射激光器阵列以与外部主振荡器相同的波长工作。 因此，表面发射激光器阵列产生相干的光束，其由微透镜组合和聚焦。 微透镜的输出是垂直于二维集成激光器阵列发射的单一相干高功率光束。

    Superluminescent diode
    6.
    发明授权
    Superluminescent diode 失效
    超发光二极管

    公开(公告)号：US4896195A

    公开(公告)日：1990-01-23

    申请号：US168067

    申请日：1988-03-14

    申请人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

    发明人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0045

    摘要： A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.

    摘要翻译： 一种半导体二极管结构，包括光吸收衬底，有源区和围绕有源区的一对覆层。 激光通过倾斜端面被抑制，该倾斜端面将光线向下反射到衬底中，在其被吸收的位置，仅提供通过有源区域的自发发射的光的一次通过。 一个公开的实施例具有用于边缘发射光的外耦合的常规端面。 另一个实施例包括形成在与倾斜面相邻的衬底的开口中的表面发射小面。 又一实施例具有两个倾斜面。 一个倾斜小面可以用于将光反射到吸收衬底中，或者两者可以用于通过单独的表面发射面反射光。

    Backpack And Garment Assembly
    7.
    发明申请
    Backpack And Garment Assembly 审中-公开
    背包和服装大会

    公开(公告)号：US20160374458A1

    公开(公告)日：2016-12-29

    申请号：US15131731

    申请日：2016-04-18

    申请人： Michael Jansen

    发明人： Michael Jansen

    IPC分类号： A45F3/04 ,  A41D31/00 ,  A41D1/04 ,  A41D27/20 ,  A41D3/00

    CPC分类号： A45F3/04 ,  A41D2400/48 ,  A45F4/12 ,  A45F2003/003

    摘要： A backpack and garment assembly according to the present invention includes a wearable garment having a left front portion, a right front portion, a back portion opposite from the left and right front portions, respectively, and a pair of sleeve portions extending away from the left and the right front portions, respectively. A storage pack is formed to an outer surface of the back portion of the torso wearable garment and configured to contain objects therein. The storage pack includes an upper end and opposed lower end and defines a first compartment extending within an interior area of the storage pack substantially between the upper and lower ends. The assembly includes a GPS device for security tracking and an electrical receptacle enabling external devices access to an internal battery. The wearable garment may be a coat, jacket, or vest.

    摘要翻译： 根据本发明的背包和服装组件包括一个可穿着的衣服，其分别具有左前部，右前部，与左前部和右前部相对的后部，以及一对远离左边延伸的套筒部分 和右前部分。 存储包形成在躯干可穿戴衣服的后部的外表面上并且被构造成在其中容纳物品。 存储包包括上端和相对的下端，并且限定了在储存包的内部区域内延伸的第一隔室，其基本上在上端和下端之间。 组件包括用于安全跟踪的GPS设备和允许外部设备访问内部电池的电气插座。 可穿着的服装可以是外套，夹克或背心。

    Wavelength locked fiber-coupled diode-laser bar
    9.
    发明申请
    Wavelength locked fiber-coupled diode-laser bar 失效
    波长锁定光纤耦合二极管激光棒

    公开(公告)号：US20060039418A1

    公开(公告)日：2006-02-23

    申请号：US10919841

    申请日：2004-08-17

    申请人： Serguei Anikitchev ,  Michael Jansen

    发明人： Serguei Anikitchev ,  Michael Jansen

    IPC分类号： H01S3/10

    CPC分类号： H01S5/4062 ,  G02B6/021 ,  G02B6/425 ,  H01S5/005 ,  H01S5/141 ,  H01S5/146 ,  H01S5/147

    摘要： In apparatus for wavelength stabilizing and spectrally narrowing an output beam of a diode-laser, a cylindrical lens is arranged to collimate the beam in the fast axis of the diode laser without reducing divergence in the slow axis of the diode-laser. A length of optical fiber is arranged to receive the fast-axis collimated beam from the lens. The optical fiber has a core surrounded by a first cladding, the first cladding being surrounded by a second cladding. The core of the optical fiber has an elongated cross section and includes a wavelength selective Bragg grating. The core functions as a low-mode core in the width direction of the cross section. The length direction of the core is aligned with the fast axis of the diode-laser. The fast-axis collimated beam and the low mode width of the core provides that the Bragg grating only reflects light that propagates parallel the longitudinal axis of the fiber. Light reflected from the grating is fed back to the diode-laser for stabilizing the wavelength and spectrally narrowing the diode-laser output beam.

    摘要翻译： 在用于波长稳定并且使二极管激光器的输出光束变窄的装置中，柱面透镜被布置成使二极管激光器的快轴中的光束准直，而不会减小二极管激光器的慢轴的发散。 布置一段光纤以从透镜接收快轴准直光束。 光纤具有由第一包层围绕的芯，第一包层被第二包层包围。 光纤的核心具有细长的横截面并且包括波长选择布拉格光栅。 核心作为横截面宽度方向的低模芯。 芯的长度方向与二极管激光器的快轴对齐。 快轴准直光束和芯的低模宽度提供了布拉格光栅仅反射平行于光纤纵轴传播的光。 从光栅反射的光被反馈到二极管激光器，用于稳定波长并使二极管激光输出光束变窄。