公开(公告)号：US4985897A

公开(公告)日：1991-01-15

申请号：US254905

申请日：1988-10-07

申请人： Dan Botez ,  Michael Jansen ,  Luke J. Mawst ,  Gary L. Peterson ,  William W. Simmons ,  Jaroslava Z. Wilcox ,  Jane J. J. Yang

发明人： Dan Botez ,  Michael Jansen ,  Luke J. Mawst ,  Gary L. Peterson ,  William W. Simmons ,  Jaroslava Z. Wilcox ,  Jane J. J. Yang

IPC分类号： H01S3/23 ,  H01S3/06 ,  H01S5/00 ,  H01S5/14 ,  H01S5/40

CPC分类号： H01S5/4062 ,  H01S5/148 ,  H01S5/4068

摘要： A semiconductor laser array with features providing good beam quality at high powers, first by employing a laterally unguided diffraction region in which light from a set of waveguides is re-imaged in accordance with the Talbot effect and two arrays of waveguides may be used to provide a spatial filtering effect to select a desired array mode. This provides a laser array with increased power per unit solid angle, and with additional advantages of ability to scale the device up to larger arrays, ability to control the electrical excitation of the device for better optimization, and improved modal discrimination. A second aspect of the invention is the use of a resonance condition in an antiguide array, to produce a uniform near-field intensity pattern and improved coupling and device coherence. This resonance structure may be combined with the Talbot-effect structure to suppress the out-of-phase mode, or the out-of-phase mode may be suppressed by other means, such as by introducing interelement radiation losses or absorption losses in the antiguide array.

公开(公告)号：US5063570A

公开(公告)日：1991-11-05

申请号：US604315

申请日：1990-10-29

申请人： Dan Botez ,  Luke J. Mawst ,  Gary L. Peterson

发明人： Dan Botez ,  Luke J. Mawst ,  Gary L. Peterson

IPC分类号： H01S5/40

CPC分类号： H01S5/4031

摘要： A semiconductor laser array of antiguides having a large number of antiguide elements to provide relatively high optical power output with a high degree of coherence and array mode discrimination. The antiguide elements are grouped into array cells that are separated by interarray regions having a width and refractive index selected to produce a resonance condition in the 0.degree.-phase-shift array mode. Each array cell is also designed to operate in the resonant condition, and losses in the interarray regions discriminate against modes other than the 0.degree.-phase-shift mode. The entire group of cells operates as a high-power, coherent ensemble, without the degradation of mode discrimination and beam quality usually associated with large numbers of waveguide elements.

摘要翻译： 一种具有大量抗划线元件的防划离元件的半导体激光器阵列，以提供相对较高的光功率输出，具有高度的相干性和阵列模式鉴别。 反射元件被分组成阵列单元，该阵列单元被选择为具有0° - 移相阵列模式的谐振条件的宽度和折射率的区域间隔开。 每个阵列单元还被设计为在谐振条件下工作，并且在阵列区域中的损耗区别于0° - 相移模式以外的模式。 整个单元组作为大功率相干集合而工作，而不会降低通常与大量波导元件相关的模式识别和光束质量。

公开(公告)号：US5276700A

公开(公告)日：1994-01-04

申请号：US849911

申请日：1992-03-12

申请人： Michael Jansen ,  Dan Botez ,  Luke J. Mawst ,  Thomas J. Roth ,  Jane J. Yang

发明人： Michael Jansen ,  Dan Botez ,  Luke J. Mawst ,  Thomas J. Roth ,  Jane J. Yang

IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/40 ,  H01S5/42 ,  H01S3/19

CPC分类号： H01S5/4031 ,  H01S5/4006 ,  H01S5/4025 ,  H01S5/4068 ,  H01S5/42

摘要： This invention discloses a semiconductor laser incorporating a plurality of resonant optical waveguide array cells. In each of the resonant optical waveguide array cells, leaky waveguide elements are coupled together such that radiation leaked from one antiguide element is coupled with radiation propagating along another antiguide element across an interelement region. As the radiation propagates through the array it is reflected at each end of the array until it builds up enough optical gain to reach lasing threshold. Then, radiation is leaked from the sides of each array such that this radiation can impinge other resonant optical waveguide arrays and be coupled with these arrays in phase to develop a laser beam having a higher intensity than can be achieved with a single array semiconductor laser.

摘要翻译： 本发明公开了一种结合了多个谐振光波导阵列单元的半导体激光器。 在每个谐振光波导阵列单元中，泄漏的波导元件耦合在一起，使得从一个反射元件泄漏的辐射与沿着另一个反射元件穿过元件区域传播的辐射耦合。 当辐射通过阵列传播时，其在阵列的每个端部被反射，直到它建立足够的光学增益以达到激光阈值。 然后，辐射从每个阵列的侧面泄漏，使得该辐射可以撞击其他谐振光波导阵列并且与这些阵列同相耦合以形成具有比可以用单阵列半导体激光器实现的强度更高的强度的激光束。

公开(公告)号：US5889805A

公开(公告)日：1999-03-30

申请号：US741632

申请日：1996-11-01

申请人： Dan Botez ,  Luke J. Mawst

发明人： Dan Botez ,  Luke J. Mawst

IPC分类号： H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32333 ,  H01S5/3409 ,  H01S5/3434

摘要： Semiconductor diode lasers include an aluminum free active region including at least one active layer having a general composition In.sub.(1-x) Ga.sub.x As.sub.y P.sub.(1-y) where 0.ltoreq.y.ltoreq.1; two confinement layers bounding the active region and having a general composition In.sub.(1-x) (Ga.sub.(1-z) Al.sub.z)x P wherein aluminum content z may be zero; and a lower cladding layer, and at least one upper cladding layer adjacent the confinement layers. The cladding layers have the same general composition as the adjacent confinement layer, but always have a finite aluminum content. The aluminum content of the cladding layers is selected such that the cladding layers have a energy bandgap greater than the energy bandgap of the confinement layers.

摘要翻译： 半导体二极管激光器包括无铝的有源区，包括至少一个具有一般组成In（1-x）GaxAsyP（1-y）的活性层，其中0≤y≤1; 界定有源区并具有一般组成In（1-x）（Ga（1-z）Alz）xP的两个约束层，其中铝含量z可以为零; 和下包层，以及与限制层相邻的至少一个上包层。 包覆层具有与相邻限制层相同的总体组成，但总是具有有限的铝含量。 选择包覆层的铝含量使得包层具有比限制层的能带隙大的能带隙。

公开(公告)号：US4866724A

公开(公告)日：1989-09-12

申请号：US233390

申请日：1988-08-18

申请人： Dan Botez ,  Luke J. Mawst

发明人： Dan Botez ,  Luke J. Mawst

IPC分类号： H01S5/40

CPC分类号： H01S5/4068

摘要： A semiconductor laser diode array structure in which interelement losses are deliberately included, to favor operation at higher-order array modes of operation, and thereby avoid the disadvantage of beam broadening that results when lower-order array modes of operation are used at very high drive currents. To provide a desirable far-field radiation pattern, the structure includes a wide-waveguide interferometric configuration to select only the lowest of the higher-order modes. The desired interelement losses are obtained in the illustrative embodiment by a buffer layer that provides antiguiding in a transverse direction, but only in the interelement regions. The buffer layer is transparent, for strong interelement coupling and stability of operation. The illustrative embodiment was operated at drive currents in excess of four times threshold current, and with beam broadening only slightly above the diffraction limit.

摘要翻译： 一种半导体激光二极管阵列结构，其中有意地包括元件损耗，以有利于在高阶阵列工作模式下的操作，从而避免了当在非常高的驱动下使用低阶阵列工作模式时导致的光束变宽的缺点 电流。 为了提供期望的远场辐射图，该结构包括仅选择较低阶模式的宽波导干涉配置。 在说明性实施例中，通过缓冲层在横向方向上提供防护，但仅在内部区域中获得所需的元件损耗。 缓冲层是透明的，用于强耦合和稳定操作。 说明性实施例在超过阈值电流的四倍的驱动电流下操作，并且光束变宽仅略高于衍射极限。

公开(公告)号：US20140037258A1

公开(公告)日：2014-02-06

申请号：US13562560

申请日：2012-07-31

申请人： Dan Botez ,  Thomas F. Kuech ,  Luke J. Mawst ,  Steven Christopher Ruder

发明人： Dan Botez ,  Thomas F. Kuech ,  Luke J. Mawst ,  Steven Christopher Ruder

IPC分类号： C30B25/04 ,  G02B6/10

CPC分类号： G02B6/122 ,  C30B25/04 ,  C30B29/403 ,  C30B29/42 ,  C30B29/44 ,  G02B2006/12035 ,  G02B2006/12097

摘要： Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.

摘要翻译： 提供了制造取向图案化半导体结构的方法。 该结构是用于非线性频率转换的光波导结构。 这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。 制造取向图案化结构的方法利用在异质结构生长过程的中间阶段的一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

公开(公告)号：US08259767B2

公开(公告)日：2012-09-04

申请号：US12639178

申请日：2009-12-16

申请人： Dan Botez ,  Luke J. Mawst

发明人： Dan Botez ,  Luke J. Mawst

IPC分类号： H01S3/04 ,  H01S5/00 ,  H01L21/00 ,  H01L21/76

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/02461 ,  H01S5/2224 ,  H01S5/3213 ,  H01S5/4031 ,  H01S5/4081

摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.

摘要翻译： 提供能够发射中长波长红外（即4-12μm）辐射的半导体激光阵列器件。 这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构; 以及横向间隔开的横向间隔的沟槽区域，横向延伸通过光学限制和包层结构，并且部分地延伸到QCL结构中。 每个沟槽区域包括包含半绝缘材料的下沟槽层和包括折射率高于半绝缘材料的折射率的材料的上沟槽层限定了多个横向间隔开的元件 由激光阵列器件中的元件区域分开的区域。

公开(公告)号：US20120201263A1

公开(公告)日：2012-08-09

申请号：US12639178

申请日：2009-12-16

申请人： Dan Botez ,  Luke J. Mawst

发明人： Dan Botez ,  Luke J. Mawst

IPC分类号： H01S5/34 ,  H01L33/06

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/02461 ,  H01S5/2224 ,  H01S5/3213 ,  H01S5/4031 ,  H01S5/4081

摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.

摘要翻译： 提供能够发射中长波长红外线（即4-12μm）辐射的半导体激光器阵列器件。 这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构; 以及横向间隔开的横向间隔的沟槽区域，横向延伸通过光学限制和包层结构，并且部分地延伸到QCL结构中。 每个沟槽区域包括包含半绝缘材料的下沟槽层和包括折射率高于半绝缘材料的折射率的材料的上沟槽层限定了多个横向间隔开的元件 由激光阵列器件中的元件区域分开的区域。

公开(公告)号：US20090022196A1

公开(公告)日：2009-01-22

申请号：US12140414

申请日：2008-06-17

申请人： Dan Botez ,  Dapeng P. Xu ,  Luke J. Mawst

发明人： Dan Botez ,  Dapeng P. Xu ,  Luke J. Mawst

IPC分类号： H01S5/343 ,  H01S5/34

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/3406 ,  H01S5/3407 ,  Y10S977/951

摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.

摘要翻译： 子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。 在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。 反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。 在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

公开(公告)号：US06229153B1

公开(公告)日：2001-05-08

申请号：US08879161

申请日：1997-06-19

申请人： Dan Botez ,  Luke J. Mawst ,  Ali R. Mirabedini

发明人： Dan Botez ,  Luke J. Mawst ,  Ali R. Mirabedini

IPC分类号： H01L2972

CPC分类号： B82Y10/00 ,  H01L29/882

摘要： A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to the edge of the conduction band in GaAs, with a preferred quantum well layer formed of InGaAs. The resonant tunneling diode structure is grown by a metal organic chemical vapor deposition process on the surface of the nominally exact (100) GaAs substrate. Layers of doped GaAs may be formed on either side of the multilayer resonant tunneling diode structure, and spacer layers of GaAs may also be provided on either side of the barrier layers to reduce the intrinsic capacitance of the structure.

摘要翻译： 在砷化镓材料系统中制造谐振隧穿二极管，其中AlGaAs的阻挡层与它们之间具有低带隙材料的量子阱层。 选择阱的材料以将GaAs中的导带的边缘的第二能级调整为由InGaAs形成的优选量子阱层。 谐振隧道二极管结构通过金属有机化学气相沉积工艺在标称精确（100）GaAs衬底的表面上生长。 可以在多层谐振隧道二极管结构的任一侧上形成掺杂GaAs的层，并且还可以在势垒层的任一侧上设置GaAs的间隔层以降低结构的本征电容。