-
公开(公告)号:US20250072207A1
公开(公告)日:2025-02-27
申请号:US18948879
申请日:2024-11-15
Applicant: Japan Display Inc.
Inventor: Heisuke KANAYA
IPC: H10K50/842 , H01L27/12 , H01L29/423 , H01L29/786 , H10K50/13 , H10K50/15 , H10K50/16 , H10K50/828 , H10K50/84 , H10K50/844 , H10K59/121 , H10K59/124 , H10K77/10 , H10K102/00
Abstract: A display device includes a substrate, a plurality of pixels above the substrate, each of the pixels including a light emitting element, a display region including the plurality of pixels, a thin film transistor which each of the plurality of pixels includes, a protective film including a first inorganic insulating material and located between the thin film transistor and the light emitting element, a sealing film including a second inorganic insulating material and covering the light emitting element, and at least one through hole located in the display region and passing through the substrate, the protective film, and the sealing film, wherein the second inorganic insulating material is in direct contact with the protective film in a first region located between the through hole and the pixels.
-
公开(公告)号:US20250068273A1
公开(公告)日:2025-02-27
申请号:US18941296
申请日:2024-11-08
Applicant: Japan Display Inc.
Inventor: Hideyuki TAKAHASHI , Hiroshi TABATAKE , Sho YANAGISAWA
IPC: G06F3/041 , G06F3/044 , H10K59/131 , H10K59/80
Abstract: Provided is a display device including a first dam surrounding the display area, a second dam surrounding the first dam, a first sensor electrode and a second sensor electrode overlapping the display area, a first sensor wiring and a second sensor wiring over the first dam and electrically connected to the first sensor electrode and the second sensor electrode, respectively, a first wiring under the second dam and electrically connected to the first sensor wiring at a first contact portion, and a second wiring under the second dam and electrically connected to the second sensor wiring at a second contact portion.
-
公开(公告)号:US20250068021A1
公开(公告)日:2025-02-27
申请号:US18792693
申请日:2024-08-02
Applicant: Japan Display Inc.
Inventor: Koji KITAMURA
IPC: G02F1/1362 , G02F1/1368
Abstract: According to one embodiment, a display device includes a first substrate, a second substrate overlapping with the first substrate, and a liquid crystal layer. The first substrate includes a scanning line, a signal line, a switching element electrically connected to the scanning line and the signal line, and an organic insulating film including an aperture and overlapping with the scanning line, the signal line, and the switching element. The organic insulating film includes an upper surface facing the second substrate and a protruding portion protruding from the upper surface onto the second substrate to support the second substrate.
-
公开(公告)号:US20250068020A1
公开(公告)日:2025-02-27
申请号:US18948780
申请日:2024-11-15
Applicant: Japan Display Inc.
Inventor: Yoshitaka OZEKI , Nobutaka OZAKI
IPC: G02F1/1362 , G02F1/1339 , G02F1/1343 , G02F1/1368
Abstract: According to one embodiment, a display device includes a first substrate and a second substrate opposed to the first substrate. The first substrate includes an insulating substrate, a switching element located on the insulating substrate and having a relay electrode, an organic insulating film covering the switching element and having a first through-hole penetrating to the relay electrode, a pixel electrode being in contact with the relay electrode via the first through-hole, a first capacitance insulating film covering the pixel electrode, a filler having an insulation property filled in at least the first through-hole and located on the pixel electrode and the first capacitance insulating film, and a common electrode covering the filler.
-
公开(公告)号:US20250068011A1
公开(公告)日:2025-02-27
申请号:US18796391
申请日:2024-08-07
Applicant: Japan Display Inc.
Inventor: Takashi OTA , Michihide SHIBATA , Nobuyuki SUZUKI , Masafumi OKADA
IPC: G02F1/1335 , G02F1/13357
Abstract: A backlight includes: a light source capable of emitting light spreading in first and second directions perpendicular to each other, from an optical axis; a first cylindrical lens that refracts and brings the light closer along the first direction to the optical axis, the first cylindrical lens overlapping with the light source in a third direction perpendicular to the first and second directions; a second cylindrical lens that refracts and brings the light even closer along the first direction to the optical axis, the second cylindrical lens overlapping with the light source and the first cylindrical lens in the third direction; and a reflector that reflects and brings the light closer along the second direction to the optical axis, the reflector being positioned between the first cylindrical lens and the second cylindrical lens in the third direction, the reflector avoiding overlap with the light source.
-
公开(公告)号:US12237346B2
公开(公告)日:2025-02-25
申请号:US18225809
申请日:2023-07-25
Applicant: Japan Display Inc. , The University of Tokyo
Inventor: Keiichi Saito , Takashi Nakamura , Gen Koide , Takao Someya , Tomoyuki Yokota
IPC: H01L27/144 , H01L31/101
Abstract: According to an aspect, a detection device includes a plurality of optical sensors arranged on a substrate. Each of the optical sensors includes a first photodiode and a second photodiode that is coupled in series and in an opposite direction to the first photodiode.
-
公开(公告)号:US20250063883A1
公开(公告)日:2025-02-20
申请号:US18940007
申请日:2024-11-07
Applicant: Japan Display Inc. , The University of Tokyo
Inventor: Takashi NAKAMURA , Makoto UCHIDA , Masahiro TADA , Marina MOCHIZUKI , Hirofumi KATO , Akio TAKIMOTO , Takao SOMEYA , Tomoyuki YOKOTA
IPC: H10K39/32 , A61B5/021 , G06V40/13 , H01L29/786
Abstract: A detection device includes a photodiode, and a thin-film transistor coupled to the photodiode. The thin-film transistor includes a semiconductor layer between a light-blocking layer and the photodiode, and an electrode layer between the semiconductor layer and the photodiode, and the electric layer includes a source electrode and a drain electrode of the thin-film transistor. The source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween.
-
公开(公告)号:US20250063751A1
公开(公告)日:2025-02-20
申请号:US18934519
申请日:2024-11-01
Applicant: Japan Display Inc.
Inventor: Hajime WATAKABE , Masashi TSUBUKU , Toshinari SASAKI , Takaya TAMARU
Abstract: A method for manufacturing a semiconductor device comprises steps of: forming an oxide semiconductor layer on a substrate by a sputtering method; performing a first heat treatment on the oxide semiconductor layer after placing the substrate on which the oxide semiconductor layer is formed in a heating furnace having a heating medium maintained at a preset temperature; forming a gate insulating layer on the oxide semiconductor layer after the first heat treatment; and forming a gate electrode on the gate insulating layer. When the substrate is installed in the heating furnace, a temperature drop of the heating medium is kept within 15% of the set temperature.
-
公开(公告)号:US12232262B2
公开(公告)日:2025-02-18
申请号:US18407700
申请日:2024-01-09
Applicant: Japan Display Inc.
Inventor: Hideaki Abe
Abstract: According to one embodiment, an electronic device includes a panel, a circuit board, a first flexible wiring board, and a first IC chip. The panel includes a curved display surface, a mounting portion curved, and a plurality of first pads disposed at intervals on the mounting portion. The circuit board is a plate-like. The first flexible wiring board has a first end portion mounted on the plurality of first pads and a second end portion connected to the circuit board. The first IC chip is mounted on the mounting portion and electrically connected to the first flexible wiring board. A first center of the first flexible wiring board is closer to a third center of the panel than a second center of the first IC chip in plan view.
-
公开(公告)号:US12230626B2
公开(公告)日:2025-02-18
申请号:US18536767
申请日:2023-12-12
Applicant: Japan Display Inc.
Inventor: Toshinari Sasaki
IPC: H01L29/06 , G09G3/20 , H01L23/482 , H01L23/485 , H01L27/02 , H01L29/423 , H01L29/45 , H01L29/66 , H01L29/739 , H01L29/861 , H01L29/872 , H01L29/24
Abstract: A diode having a simple structure and a simple manufacturing method of the diode are provided. A diode including: a semiconductor layer having a first region and a second region having a resistance lower than a resistance of the first region; a first insulating layer having a first aperture portion and a second aperture portion and covering the semiconductor layer other than the first aperture and the second aperture, the first aperture portion exposing the semiconductor layer in the first region, the second aperture portion exposing the semiconductor layer in the second region; a first conductive layer connected to the semiconductor layer in the first aperture portion and overlapping with the semiconductor layer in the first region via the first insulating layer in a planar view; and a second conductive layer connected to the semiconductor layer in the second aperture.
-
-
-
-
-
-
-
-
-