摘要:
A method and structure for a modulator which includes a forward-biased diode optimized for power and area to perform a tuning function, and a reverse-biased diode optimized for speed to perform a modulation function.
摘要:
For integrated circuits including circuit packaging and circuit communication technologies provision is made for a method of interconnecting or mapping a two-dimensional optoelectronic (OE) device array to a one-dimensional waveguide array. Also provided is an arrangement for the interconnecting or mapping of a two-dimensional optoelectronic (OE) device array to a one-dimensional waveguide array.
摘要:
A method and structure for a modulator which includes a forward-biased diode optimized for power and area to perform a tuning function, and a reverse-biased diode optimized for speed to perform a modulation function.
摘要:
For integrated circuits including circuit packaging and circuit communication technologies provision is made for a method of interconnecting or mapping a two-dimensional optoelectronic (OE) device array to a one-dimensional waveguide array. Also provided is an arrangement for the interconnecting or mapping of a two-dimensional optoelectronic (OE) device array to a one-dimensional waveguide array.
摘要:
A method for an electronic device is provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the electronic device. The method emits extraneous randomized light emissions in substantial close proximity to the transistors to hide a pattern of light emissions emitted from the transistors. As one feature, the device can include a source of randomized light emissions in substantial close proximity to the transistors to hide a pattern of the emitted light from the transistors in randomized light emissions emitted by the source. As a second feature, the device can emit the randomized light emissions by randomly delaying an electrical signal that is electrically coupled to the transistors and, in response to the randomly delayed electrical signal, the transistors randomly emitting light emissions thereby hiding a separate pattern of light emission emitted from the transistors.
摘要:
An integrated circuit chip (IC) is equipped with a device for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in a circuit located in the IC. The device emits extraneous randomized light emissions in substantial close proximity to the transistors to hide a pattern of light emissions emitted from the transistors. As one feature, the device can include a source of randomized light emissions in substantial close proximity to the transistors to hide a pattern of the emitted light from the transistors in randomized light emissions emitted by the source. As a second feature, the device can emit the randomized light emissions by randomly delaying an electrical signal that is electrically coupled to the transistors and, in response to the randomly delayed electrical signal, the transistors randomly emitting light emissions thereby hiding a separate pattern of light emission emitted from the transistors.
摘要:
A system for time-correlated photon counting. The system uses one or more photon detectors to produce electrical pulses corresponding to photons read from a target. The system uses a discriminator with a first input coupled to a trigger output from a pulsed optical source and a second input for receiving the electrical pulses. A time-to-pulse height converter is used for producing a series of difference signals each with a respective maxima and whose magnitude is related to the time difference between the trigger output and the electrical pulses. In addition, the system employs a pulse shaping electronic circuit for receiving pulsed electrical output and producing a series of one or more characteristic signals. An A/D converter with a first input receives the difference signals and a second input receives part of the characteristic signals. The A/D converter produces a first series of digital signals representing the difference signals and a second series of digital signals representing the characteristics signals. The results of the A/D converter are feed to a multichannel analyzer for time-shifting the first series of digital signals based on at the second series of digital signals so that the maxima for any given difference signals occurs at the same time as the maxima for at least one other part of the series of the difference signals.
摘要翻译:用于时间相关光子计数的系统。 该系统使用一个或多个光子检测器来产生对应于从目标读取的光子的电脉冲。 该系统使用具有耦合到来自脉冲光源的触发输出的第一输入和用于接收电脉冲的第二输入的鉴别器。 时间 - 脉冲高度转换器用于产生一系列具有相应最大值的差异信号,其幅度与触发输出和电脉冲之间的时间差有关。 此外,该系统采用脉冲整形电子电路来接收脉冲电输出并产生一系列一个或多个特征信号。 具有第一输入的A / D转换器接收差分信号,第二输入接收部分特征信号。 A / D转换器产生表示差分信号的第一系列数字信号和表示特征信号的第二系列数字信号。 A / D转换器的结果被馈送到多通道分析器,用于基于第二系列数字信号对第一系列数字信号进行时移,使得任何给定差分信号的最大值与最大值同时发生 对于至少一系列差分信号的其他部分。
摘要:
An apparatus is described for obtaining single frequency laser operation in a coupled waveguide configuration without using a diffraction grating. More specifically, this invention is a laser structure for oscillating light in single longitudinal mode. This structure has a pair of coupled but dissimilar waveguides that are collinear with each other and separated by a mirror in contact with each of the guides. The length of the waveguides are adjusted so that frequency selective coupling between the waveguides can discriminate between wavelengths corresponding to different longitudinal modes.
摘要:
Picosecond response photoconductors and photoresponsive elements can be provided that retain high carrier mobility and yet have short lifetime by providing on a crystal mismatched substrate a textured layer of domain regions wherein the domain size is such that the lifetime is proportional to the square of the size divided by the diffusion coefficient of the semiconductor material. The crystalline orientation in the domains with respect to the substrate is maintained. An embodiment is an approximately 0.1 micron thick textured layer of GaAs grown on a hexagonal monocrystalline Al.sub.2 O.sub.3 having domains approximately 1.0 micron with a carrier lifetime about 5 picoseconds and a carrier mobility of about 80 cm.sup.2 volt.sup.-1 sec.sup.-1.
摘要翻译:可以提供皮秒响应光电导体和光响应元件,其保持高载流子迁移率并且通过在晶体失配衬底上提供畴区域的纹理化层而具有短寿命,其中域尺寸使得寿命与分割的尺寸的平方成正比 通过半导体材料的扩散系数。 维持相对于底物的结构域的结晶取向。 一个实施方案是在具有约1.0微米的畴的<0001>六方晶单晶Al 2 O 3上生长的约111微米厚的<111> GaAs纹理层,载流子寿命约5皮秒,载流子迁移率约为80厘沲伏-1秒-1 。
摘要:
An integrated circuit and method are provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the integrated circuit. The method prevents, in an integrated circuit, a pattern of light emitted from at least one active device in the integrated circuit from being detected external to the integrated circuit by fading the light emitted from the at least one active device in the integrated circuit and that is emitted external to the integrated circuit. Bright light emission emitted in substantial close proximity to the at least one active device in the integrated circuit, and emitted external to the integrated circuit, fades a pattern of light emission emitted from the at least one active device.