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1.发明授权Photonic modulator with forward-and reverse-biased diodes for separate tuning and modulating elements 有权具有正向和反向偏置二极管的光子调制器，用于单独的调谐和调制元件公开(公告)号：US08805126B2
公开(公告)日：2014-08-12
申请号：US13588871
申请日：2012-08-17
IPC分类号： G02F1/225
CPC分类号： G02F1/0121 , G02F1/025 , G02F1/2257
摘要： A method and structure for a modulator which includes a forward-biased diode optimized for power and area to perform a tuning function, and a reverse-biased diode optimized for speed to perform a modulation function.
摘要翻译： 一种用于调制器的方法和结构，其包括针对功率和面积优化的正向偏置二极管以执行调谐功能，以及针对速度进行优化的反向偏置二极管以执行调制功能。
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2.发明申请PHOTONIC MODULATOR WITH FORWARD-AND REVERSE-BIASED DIODES FOR SEPARATE TUNING AND MODULATING ELEMENTS 有权具有用于单独调谐和调制元件的前向和反向偏置二极管的光电调制器公开(公告)号：US20140050436A1
公开(公告)日：2014-02-20
申请号：US13588871
申请日：2012-08-17
CPC分类号： G02F1/0121 , G02F1/025 , G02F1/2257
摘要： A method and structure for a modulator which includes a forward-biased diode optimized for power and area to perform a tuning function, and a reverse-biased diode optimized for speed to perform a modulation function.
摘要翻译： 一种用于调制器的方法和结构，其包括针对功率和面积优化的正向偏置二极管以执行调谐功能，以及针对速度进行优化的反向偏置二极管以执行调制功能。
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公开(公告)号：US08775992B2
公开(公告)日：2014-07-08
申请号：US13604337
申请日：2012-09-05
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G02F1/0121 , G02F1/025 , G02F2202/105
摘要： Designing a photonics switching system is provided. A photonic switch diode is designed to attain each performance metric in a plurality of performance metrics associated with a photonic switching system based on a weighted value corresponding to each of the plurality of performance metrics. A switch driver circuit is selected from a plurality of switch driver circuits for the photonic switching system. It is determined whether each performance metric associated with the photonic switching system meets or exceeds a threshold value corresponding to each of the plurality of performance metrics based on the photonic switch diode designed and the switch driver circuit selected. In response to determining that each performance metric associated with the photonic switching system meets or exceeds the threshold value corresponding to each of the performance metrics, the photonic switching system is designed using the photonic switch diode designed and the switch driver circuit selected.
摘要翻译： 设计了一个光子切换系统。 光子开关二极管被设计为基于与多个性能度量中的每一个对应的加权值来获得与光子切换系统相关联的多个性能度量中的每个性能度量。 从用于光子交换系统的多个开关驱动器电路中选择开关驱动器电路。 基于所设计的光开关二极管和选择的开关驱动器电路，确定与光子交换系统相关联的每个性能度量是否满足或超过与多个性能度量中的每一个对应的阈值。 响应于确定与光子交换系统相关联的每个性能度量符合或超过对应于每个性能度量的阈值，使用所设计的光子开关二极管和所选择的开关驱动器电路设计光子开关系统。
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公开(公告)号：US20150302124A1
公开(公告)日：2015-10-22
申请号：US13619049
申请日：2012-09-14
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F17/5009 , G06F2217/02 , G06F2217/08 , G06F2217/84
摘要： Designing a photonics switching system is provided. A photonic switch diode is designed to attain each performance metric in a plurality of performance metrics associated with a photonic switching system based on a weighted value corresponding to each of the plurality of performance metrics. A switch driver circuit is selected from a plurality of switch driver circuits for the photonic switching system. It is determined whether each performance metric associated with the photonic switching system meets or exceeds a threshold value corresponding to each of the plurality of performance metrics based on the designed photonic switch diode and the selected switch driver circuit. In response to determining that each performance metric associated with the photonic switching system meets or exceeds the threshold value corresponding to each of the performance metrics, the photonic switching system is designed using the designed photonic switch diode and the selected switch driver circuit.
摘要翻译： 设计了一个光子切换系统。 光子开关二极管被设计为基于与多个性能度量中的每一个对应的加权值来获得与光子切换系统相关联的多个性能度量中的每个性能度量。 从用于光子交换系统的多个开关驱动器电路中选择开关驱动器电路。 基于设计的光子开关二极管和所选择的开关驱动器电路，确定与光子切换系统相关联的每个性能度量是否满足或超过与多个性能度量中的每一个对应的阈值。 响应于确定与光子交换系统相关联的每个性能度量符合或超过对应于每个性能度量的阈值，使用所设计的光子开关二极管和所选择的开关驱动器电路来设计光子交换系统。
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公开(公告)号：US20140068534A1
公开(公告)日：2014-03-06
申请号：US13604337
申请日：2012-09-05
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G02F1/0121 , G02F1/025 , G02F2202/105
摘要： Designing a photonics switching system is provided. A photonic switch diode is designed to attain each performance metric in a plurality of performance metrics associated with a photonic switching system based on a weighted value corresponding to each of the plurality of performance metrics. A switch driver circuit is selected from a plurality of switch driver circuits for the photonic switching system. It is determined whether each performance metric associated with the photonic switching system meets or exceeds a threshold value corresponding to each of the plurality of performance metrics based on the photonic switch diode designed and the switch driver circuit selected. In response to determining that each performance metric associated with the photonic switching system meets or exceeds the threshold value corresponding to each of the performance metrics, the photonic switching system is designed using the photonic switch diode designed and the switch driver circuit selected.
摘要翻译： 设计了一个光子切换系统。 光子开关二极管被设计为基于与多个性能度量中的每一个对应的加权值来获得与光子切换系统相关联的多个性能度量中的每个性能度量。 从用于光子交换系统的多个开关驱动器电路中选择开关驱动器电路。 基于所设计的光开关二极管和选择的开关驱动器电路，确定与光子交换系统相关联的每个性能度量是否满足或超过与多个性能度量中的每一个对应的阈值。 响应于确定与光子交换系统相关联的每个性能度量符合或超过对应于每个性能度量的阈值，使用所设计的光子开关二极管和所选择的开关驱动器电路设计光子开关系统。
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6.发明申请SILICON PHOTONICS WAFER USING STANDARD SILICON-ON-INSULATOR PROCESSES THROUGH SUBSTRATE REMOVAL OR TRANSFER 有权使用通过基板去除或转移的标准硅绝缘体工艺的硅光电晶体公开(公告)号：US20130181233A1
公开(公告)日：2013-07-18
申请号：US13353162
申请日：2012-01-18
CPC分类号： H01L21/76251
摘要： Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.
摘要翻译： 提供了硅光子晶片的处理。 接收包括有源硅光子学层，薄掩埋氧化物层和硅衬底的硅光子晶片。 薄的掩埋氧化物层位于有源硅光子层和硅衬底之间。 还接收包括有源电层的电CMOS晶片。 硅光子晶片的有源硅光子层被倒装芯片结合到电CMOS晶片的有源电层。 去除暴露出薄的掩埋氧化物层的背面的硅衬底。 将低光学折射率背衬晶片添加到薄的掩埋氧化物层的暴露的背面。 低光学折射率背衬晶片是玻璃衬底或硅衬底晶片。 硅衬底晶片包括附着到薄掩埋氧化物层的厚氧化物层。
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公开(公告)号：US09268890B2
公开(公告)日：2016-02-23
申请号：US13619049
申请日：2012-09-14
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F17/5009 , G06F2217/02 , G06F2217/08 , G06F2217/84
摘要： Designing a photonics switching system is provided. A photonic switch diode is designed to attain each performance metric in a plurality of performance metrics associated with a photonic switching system based on a weighted value corresponding to each of the plurality of performance metrics. A switch driver circuit is selected from a plurality of switch driver circuits for the photonic switching system. It is determined whether each performance metric associated with the photonic switching system meets or exceeds a threshold value corresponding to each of the plurality of performance metrics based on the designed photonic switch diode and the selected switch driver circuit. In response to determining that each performance metric associated with the photonic switching system meets or exceeds the threshold value corresponding to each of the performance metrics, the photonic switching system is designed using the designed photonic switch diode and the selected switch driver circuit.
摘要翻译： 设计了一个光子切换系统。 光子开关二极管被设计为基于与多个性能度量中的每一个对应的加权值来获得与光子切换系统相关联的多个性能度量中的每个性能度量。 从用于光子交换系统的多个开关驱动器电路中选择开关驱动器电路。 基于设计的光子开关二极管和所选择的开关驱动器电路，确定与光子切换系统相关联的每个性能度量是否满足或超过与多个性能度量中的每一个对应的阈值。 响应于确定与光子交换系统相关联的每个性能度量符合或超过对应于每个性能度量的阈值，使用所设计的光子开关二极管和所选择的开关驱动器电路来设计光子交换系统。
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8.发明授权Silicon photonics wafer using standard silicon-on-insulator processes through substrate removal or transfer 有权硅光子晶片使用标准的绝缘体上硅工艺，通过衬底去除或转移公开(公告)号：US08901576B2
公开(公告)日：2014-12-02
申请号：US13353162
申请日：2012-01-18
CPC分类号： H01L21/76251
摘要： Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.
摘要翻译： 提供了硅光子晶片的处理。 接收包括有源硅光子学层，薄掩埋氧化物层和硅衬底的硅光子晶片。 薄的掩埋氧化物层位于有源硅光子层和硅衬底之间。 还接收包括有源电层的电CMOS晶片。 硅光子晶片的有源硅光子层被倒装芯片结合到电CMOS晶片的有源电层。 去除暴露出薄的掩埋氧化物层的背面的硅衬底。 将低光学折射率背衬晶片添加到薄的掩埋氧化物层的暴露的背面。 低光学折射率背衬晶片是玻璃衬底或硅衬底晶片。 硅衬底晶片包括附着到薄掩埋氧化物层的厚氧化物层。
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公开(公告)号：US08879927B2
公开(公告)日：2014-11-04
申请号：US13039026
申请日：2011-03-02
CPC分类号： H03F3/08 , H04B10/6971 , H04L25/03057
摘要： An optical receiver, a method of operating an optical receiver, a correction based transimpedance amplifier circuit, and a method of adjusting an output of a transimpedance amplifier. In one embodiment, the optical receiver comprises an optical-to-electrical converter, a transimpedance amplifier, and a correction circuit. The optical-to-electrical converter is provided for receiving an optical signal and converting the optical signal to an electrical signal. The transimpedance amplifier is provided for receiving the electrical signal from the optical-to-electrical converter and for generating from the electrical signal an amplified electrical signal. The amplified electrical signal has inter symbol interference resulting from a reduced bandwidth of the transimpedance amplifier. The correction circuit is provided for receiving the amplified electrical signal from the transimpedance amplifier and for generating, from the amplified electrical signal, an output signal including corrections for the inter symbol interference in the amplified electrical signal effectively increasing a bandwidth of the optical receiver.
摘要翻译： 光接收器，操作光接收器的方法，基于校正的跨阻抗放大器电路以及调制跨阻放大器的输出的方法。 在一个实施例中，光接收器包括光电转换器，跨阻放大器和校正电路。 光 - 电转换器用于接收光信号并将光信号转换成电信号。 跨阻放大器被提供用于接收来自光 - 电转换器的电信号，并且用于从电信号产生放大的电信号。 放大的电信号具有由跨阻放大器的减少的带宽导致的码间干扰。 该校正电路用于从跨阻放大器接收经放大的电信号，并且从经放大的电信号产生包括用于放大电信号中的符号间干扰的校正的输出信号，从而有效地增加光接收机的带宽。
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10.发明授权Optical receiver using infinite impulse response decision feedback equalization 有权光接收机采用无限脉冲响应判决反馈均衡公开(公告)号：US08798484B2
公开(公告)日：2014-08-05
申请号：US13398190
申请日：2012-02-16
IPC分类号： H04B10/00
摘要： A technique is provided for configuring an optical receiver. A photo detector is connected to a load resistor, and the photo detector includes an internal capacitance. A current source is connected through a switching circuit to the load resistor and to the photo detector. The current source is configured to discharge the internal capacitance of the photo detector. The switching circuit is configured to connect the current source to the internal capacitance based on a previous data bit.
摘要翻译： 提供了一种用于配置光接收机的技术。 光检测器连接到负载电阻器，光电检测器包括内部电容。 电流源通过开关电路连接到负载电阻和光电检测器。 电流源被配置为放电光电检测器的内部电容。 开关电路被配置为基于先前的数据位将电流源连接到内部电容。
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