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Patent Agency Ranking
1.发明申请公开(公告)号：US20090312935A1
公开(公告)日：2009-12-17
申请号：US12303109
申请日：2007-05-31
Applicant: Jin-Woo Song , Eun-Sik Choo , Young-ki Min , Jae-Min Jung , Jeong-Hoon An , Young-Joo Park
Inventor： Jin-Woo Song , Eun-Sik Choo , Young-ki Min , Jae-Min Jung , Jeong-Hoon An , Young-Joo Park
CPC classification number: F02M21/0263 , F02D19/024 , F02D19/061 , F02D19/0628 , F02D19/0647 , F02D19/0694 , F02D41/0027 , F02D2400/11 , F02M21/0254 , F02M21/0266 , F02M21/0278 , F02M43/04 , Y02T10/32 , Y02T10/36
Abstract: Disclosed is method and apparatus for supplying fuel of LPG car having LPI system. More particularly, the present invention generates a gas fuel injection signal based on a gasoline fuel injection signal and directly injects LPG fuel within a fuel tank to a combustion chamber using the generated gas fuel injection signal to drive an engine. Therefore, an engine can be easily changed, the manufacturing cost of a duel car of LPG and gasoline can be reduced, and the manufacturing process thereof can be simplified.
Abstract translation: 公开了用于供应具有LPI系统的LPG汽车的燃料的方法和装置。 更具体地，本发明基于汽油燃料喷射信号产生气体燃料喷射信号，并且使用所产生的气体燃料喷射信号将燃料箱内的LPG燃料直接喷射到燃烧室以驱动发动机。 因此，可以容易地改变发动机，可以降低液化石油气和汽油的对峙车的制造成本，并且可以简化其制造工艺。
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2.发明授权Wafer processing method for improving gettering capabilities of wafers made therefrom 失效用于提高由其制成的晶片的吸气能力的晶片加工方法公开(公告)号：US07871904B2
公开(公告)日：2011-01-18
申请号：US12492260
申请日：2009-06-26
Applicant: Jeong Hoon An , Byeong Sam Moon
Inventor： Jeong Hoon An , Byeong Sam Moon
IPC: H01L21/322
CPC classification number: H01L21/3221
Abstract: A wafer processing method for improving gettering capabilities of wafers made therefrom is presented. The method includes the steps of preparing, annealing and ion-implanting. The preparing step involves preparing the wafer from a silicon ingot. The annealing step involves forming first gettering sites in both sides of the wafer by annealing the wafer. The ion-implanting step involves forming second gettering sites in a back side of the wafer in which the first gettering sites are already formed.
Abstract translation: 提出了一种用于提高由其制成的晶片的吸气能力的晶片加工方法。 该方法包括准备，退火和离子注入的步骤。 制备步骤包括从硅锭制备晶片。 退火步骤包括通过退火晶片在晶片的两侧形成第一吸杂位点。 离子注入步骤涉及在已经形成第一吸气部位的晶片的背面形成第二吸气部位。
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3.发明授权公开(公告)号：US07949460B2
公开(公告)日：2011-05-24
申请号：US12303109
申请日：2007-05-31
Applicant: Jin-Woo Song , Eun-Sik Choo , Young-ki Min , Jae-Min Jung , Jeong-Hoon An , Young-Joo Park
Inventor： Jin-Woo Song , Eun-Sik Choo , Young-ki Min , Jae-Min Jung , Jeong-Hoon An , Young-Joo Park
CPC classification number: F02M21/0263 , F02D19/024 , F02D19/061 , F02D19/0628 , F02D19/0647 , F02D19/0694 , F02D41/0027 , F02D2400/11 , F02M21/0254 , F02M21/0266 , F02M21/0278 , F02M43/04 , Y02T10/32 , Y02T10/36
Abstract: Disclosed is method and apparatus for supplying fuel of LPG car having LPI system. More particularly, the present invention generates a gas fuel injection signal based on a gasoline fuel injection signal and directly injects LPG fuel within a fuel tank to a combustion chamber using the generated gas fuel injection signal to drive an engine. Therefore, an engine can be easily changed, the manufacturing cost of a duel car of LPG and gasoline can be reduced, and the manufacturing process thereof can be simplified.
Abstract translation: 公开了用于供应具有LPI系统的LPG汽车的燃料的方法和装置。 更具体地，本发明基于汽油燃料喷射信号产生气体燃料喷射信号，并且使用所产生的气体燃料喷射信号将燃料箱内的LPG燃料直接喷射到燃烧室以驱动发动机。 因此，可以容易地改变发动机，可以降低液化石油气和汽油的对峙车的制造成本，并且可以简化其制造工艺。
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4.发明授权Methods and systems for measuring microroughness of a substrate combining particle counter and atomic force microscope measurements 失效用于测量结合粒子计数器和原子力显微镜测量的基底的微粗糙度的方法和系统公开(公告)号：US06552337B1
公开(公告)日：2003-04-22
申请号：US09688283
申请日：2000-10-13
Applicant: Kyoo-chul Cho , Tae-Yeol Heo , Jeong-hoon An , Gi-jung Kim
Inventor： Kyoo-chul Cho , Tae-Yeol Heo , Jeong-hoon An , Gi-jung Kim
IPC: H01J3726
CPC classification number: G01Q60/24 , G01B7/34 , G01Q30/02 , H01L22/12 , Y10S977/852
Abstract: Embodiments of the present invention provide methods for measuring a wafer surface. A portion of the wafer surface is measured using a particle counter to provide first measurements corresponding to a plurality of points on the wafer surface. A selected area of the wafer surface including one of the plurality of points is measured using an atomic force microscope (AFM) to provide a microroughness measurement of the selected area. The selected area is a localized area of the portion of the wafer surface measured using the particle counter. The first measurements and the microroughness measurement are provided as a measurement of the wafer surface. The portion measured using a particle counter may, for example, be substantially the entire wafer surface.
Abstract translation: 本发明的实施例提供了用于测量晶片表面的方法。 使用粒子计数器测量晶片表面的一部分，以提供对应于晶片表面上的多个点的第一测量。 使用原子力显微镜（AFM）测量包括多个点中的一个的晶片表面的选定区域，以提供所选区域的微粗糙度测量。 所选择的区域是使用粒子计数器测量的晶片表面部分的局部区域。 提供第一测量和微粗糙度测量作为晶片表面的测量。 使用粒子计数器测量的部分可以例如基本上是整个晶片表面。
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5.发明申请WAFER PROCESSING METHOD FOR IMPROVING GETTERING CAPABILITIES OF WAFERS MADE THEREFROM 失效WAFER加工方法，用于提高其制造过程中波形的捕获能力公开(公告)号：US20100009520A1
公开(公告)日：2010-01-14
申请号：US12492260
申请日：2009-06-26
Applicant: Jeong Hoon AN , Byeong Sam MOON
Inventor： Jeong Hoon AN , Byeong Sam MOON
IPC: H01L21/322
CPC classification number: H01L21/3221
Abstract: A wafer processing method for improving gettering capabilities of wafers made therefrom is presented. The method includes the steps of preparing, annealing and ion-implanting. The preparing step involves preparing the wafer from a silicon ingot. The annealing step involves forming first gettering sites in both sides of the wafer by annealing the wafer. The ion-implanting step involves forming second gettering sites in a back side of the wafer in which the first gettering sites are already formed.
Abstract translation: 提出了一种用于提高由其制成的晶片的吸气能力的晶片加工方法。 该方法包括准备，退火和离子注入的步骤。 制备步骤包括从硅锭制备晶片。 退火步骤包括通过退火晶片在晶片的两侧形成第一吸杂位点。 离子注入步骤涉及在已经形成第一吸气部位的晶片的背面形成第二吸气部位。
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