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    Methods and systems for measuring microroughness of a substrate combining particle counter and atomic force microscope measurements
    1.
    发明授权
    Methods and systems for measuring microroughness of a substrate combining particle counter and atomic force microscope measurements 失效
    用于测量结合粒子计数器和原子力显微镜测量的基底的微粗糙度的方法和系统

    公开(公告)号：US06552337B1

    公开(公告)日：2003-04-22

    申请号：US09688283

    申请日：2000-10-13

    申请人： Kyoo-chul Cho ,  Tae-Yeol Heo ,  Jeong-hoon An ,  Gi-jung Kim

    发明人： Kyoo-chul Cho ,  Tae-Yeol Heo ,  Jeong-hoon An ,  Gi-jung Kim

    IPC分类号： H01J3726

    CPC分类号： G01Q60/24 ,  G01B7/34 ,  G01Q30/02 ,  H01L22/12 ,  Y10S977/852

    摘要： Embodiments of the present invention provide methods for measuring a wafer surface. A portion of the wafer surface is measured using a particle counter to provide first measurements corresponding to a plurality of points on the wafer surface. A selected area of the wafer surface including one of the plurality of points is measured using an atomic force microscope (AFM) to provide a microroughness measurement of the selected area. The selected area is a localized area of the portion of the wafer surface measured using the particle counter. The first measurements and the microroughness measurement are provided as a measurement of the wafer surface. The portion measured using a particle counter may, for example, be substantially the entire wafer surface.

    摘要翻译： 本发明的实施例提供了用于测量晶片表面的方法。 使用粒子计数器测量晶片表面的一部分，以提供对应于晶片表面上的多个点的第一测量。 使用原子力显微镜（AFM）测量包括多个点中的一个的晶片表面的选定区域，以提供所选区域的微粗糙度测量。 所选择的区域是使用粒子计数器测量的晶片表面部分的局部区域。 提供第一测量和微粗糙度测量作为晶片表面的测量。 使用粒子计数器测量的部分可以例如基本上是整个晶片表面。

    3D CMOS image sensors, sensor systems including the same
    3.
    发明授权
    3D CMOS image sensors, sensor systems including the same 有权
    3D CMOS图像传感器，传感器系统包括相同

    公开(公告)号：US09035309B2

    公开(公告)日：2015-05-19

    申请号：US12984972

    申请日：2011-01-05

    申请人： Young-soo Park ,  Won-joo Kim ,  Kyoo-chul Cho ,  Gi-jung Kim ,  Sam-jong Choi

    发明人： Young-soo Park ,  Won-joo Kim ,  Kyoo-chul Cho ,  Gi-jung Kim ,  Sam-jong Choi

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14629 ,  H01L27/14687

    摘要： A three-dimensional (3D) CMOS image sensor (CIS) that sufficiently absorbs incident infrared-rays (IRs) and includes an infrared-ray (IR) receiving unit formed in a thin epitaxial film, thereby being easily manufactured using a conventional CIS process, a sensor system including the 3D CIS, and a method of manufacturing the 3D CIS, the 3D CIS including an IR receiving part absorbing IRs incident thereto by repetitive reflection to produce electron-hole pairs (EHPs); and an electrode part formed on the IR receiving part and collecting electrons produced by applying a predetermined voltage thereto.

    摘要翻译： 一种三维（3D）CMOS图像传感器（CIS），其足以吸收入射的红外线（IR）并且包括形成在薄的外延膜中的红外线（IR）接收单元，由此容易地使用传统的CIS工艺 包括3D CIS的传感器系统和制造3D CIS的方法，3D CIS包括通过重复反射吸收入射到其中的IR的IR接收部分以产生电子 - 空穴对（EHP）; 以及形成在IR接收部上并且收集通过施加预定电压而产生的电子的电极部分。

    3D CMOS Image Sensors, Sensor Systems Including the Same
    4.
    发明申请
    3D CMOS Image Sensors, Sensor Systems Including the Same 有权
    3D CMOS图像传感器，包括它的传感器系统

    公开(公告)号：US20110193940A1

    公开(公告)日：2011-08-11

    申请号：US12984972

    申请日：2011-01-05

    申请人： Young-soo Park ,  Won-joo Kim ,  Kyoo-chul Cho ,  Gi-jung Kim ,  Sam-jong Choi

    发明人： Young-soo Park ,  Won-joo Kim ,  Kyoo-chul Cho ,  Gi-jung Kim ,  Sam-jong Choi

    IPC分类号： H04N13/02 ,  H01L27/146

    CPC分类号： H01L27/14629 ,  H01L27/14687

    摘要： A three-dimensional (3D) CMOS image sensor (CIS) that sufficiently absorbs incident infrared-rays (IRs) and includes an infrared-ray (IR) receiving unit formed in a thin epitaxial film, thereby being easily manufactured using a conventional CIS process, a sensor system including the 3D CIS, and a method of manufacturing the 3D CIS, the 3D CIS including an IR receiving part absorbing IRs incident thereto by repetitive reflection to produce electron-hole pairs (EHPs); and an electrode part formed on the IR receiving part and collecting electrons produced by applying a predetermined voltage thereto.

    摘要翻译： 一种三维（3D）CMOS图像传感器（CIS），其足以吸收入射的红外线（IR）并且包括形成在薄的外延膜中的红外线（IR）接收单元，由此容易地使用传统的CIS工艺 包括3D CIS的传感器系统和制造3D CIS的方法，3D CIS包括通过重复反射吸收入射到其中的IR的IR接收部分以产生电子 - 空穴对（EHP）; 以及形成在IR接收部上并且收集通过施加预定电压而产生的电子的电极部分。