公开(公告)号：US07525325B1

公开(公告)日：2009-04-28

申请号：US11640720

申请日：2006-12-18

申请人： Mark W. Jenkins ,  Edward I. Cole, Jr. ,  Paiboon Tangyunyong ,  Jerry M. Soden ,  Jeremy A. Walraven ,  Alejandro A. Pimentel

发明人： Mark W. Jenkins ,  Edward I. Cole, Jr. ,  Paiboon Tangyunyong ,  Jerry M. Soden ,  Jeremy A. Walraven ,  Alejandro A. Pimentel

IPC分类号： G01R31/305 ,  G01R31/26 ,  G01N23/00

CPC分类号： G01R31/307

摘要： A passive voltage contrast (PVC) system and method are disclosed for analyzing ICs to locate defects and failure mechanisms. During analysis a device side of a semiconductor die containing the IC is maintained in an electrically-floating condition without any ground electrical connection while a charged particle beam is scanned over the device side. Secondary particle emission from the device side of the IC is detected to form an image of device features, including electrical vias connected to transistor gates or to other structures in the IC. A difference in image contrast allows the defects or failure mechanisms be pinpointed. Varying the scan rate can, in some instances, produce an image reversal to facilitate precisely locating the defects or failure mechanisms in the IC. The system and method are useful for failure analysis of ICs formed on substrates (e.g. bulk semiconductor substrates and SOI substrates) and other types of structures.

摘要翻译： 公开了一种无源电压对比（PVC）系统和方法，用于分析IC来定位缺陷和故障机制。 在分析期间，在装置侧扫描带电粒子束时，包含IC的半导体管芯的器件侧保持在电浮动状态而没有任何接地电连接。 检测来自IC的器件侧的二次粒子发射以形成器件特征的图像，包括连接到晶体管栅极的电通路或IC中的其它结构。 图像对比度的差异允许确定缺陷或故障机制。 在某些情况下，改变扫描速率可以产生图像反转，以便于精确定位IC中的缺陷或故障机制。 该系统和方法对于在衬底（例如，体半导体衬底和SOI衬底）上形成的IC和其它类型的结构的故障分析是有用的。

公开(公告)号：US06407560B1

公开(公告)日：2002-06-18

申请号：US09596858

申请日：2000-06-19

申请人： Jeremy A. Walraven ,  Edward I. Cole, Jr.

发明人： Jeremy A. Walraven ,  Edward I. Cole, Jr.

IPC分类号： G01R3102

CPC分类号： G01R31/2853 ,  G01R31/311

摘要： A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing a microelectromechanical (MEM) device with or without on-board integrated circuitry. One embodiment of the TIVA apparatus uses constant-current biasing of the MEM device while scanning a focused laser beam over electrically-active members therein to produce localized heating which alters the power demand of the MEM device and thereby changes the voltage of the constant-current source. This changing voltage of the constant-current source can be measured and used in combination with the position of the focused and scanned laser beam to generate an image of any short-circuit defects in the MEM device (e.g. due to stiction or fabrication defects). In another embodiment of the TIVA apparatus, an image can be generated directly from a thermoelectric potential produced by localized laser heating at the location of any short-circuit defects in the MEM device, without any need for supplying power to the MEM device. The TIVA apparatus can be formed, in part, from a scanning optical microscope, and has applications for qualification testing or failure analysis of MEM devices.

摘要翻译： 公开了用于分析具有或不具有车载集成电路的微机电（MEM）装置的热感应电压变化（TIVA）装置和方法。 TIVA装置的一个实施例使用MEM装置的恒定电流偏置，同时在其中的电活动部件上扫描聚焦的激光束以产生局部加热，其改变MEM装置的功率需求，从而改变恒定电流的电压 资源。 可以测量恒定电流源的这种变化的电压并与聚焦和扫描的激光束的位置结合使用以产生MEM器件中的任何短路缺陷的图像（例如由于粘性或制造缺陷）。 在TIVA装置的另一实施例中，可以直接从在MEM装置中的任何短路缺陷的位置处由局部激光加热产生的热电势产生图像，而不需要向MEM装置供电。 TIVA设备可以部分地由扫描光学显微镜形成，并且具有MEM器件的鉴定测试或故障分析的应用。