公开(公告)号：US06801114B2

公开(公告)日：2004-10-05

申请号：US10055425

申请日：2002-01-23

Applicant: Hung Yu Yang ,  Jesse A Castaneda ,  Reza Rofougaran

Inventor： Hung Yu Yang ,  Jesse A Castaneda ,  Reza Rofougaran

IPC: H01F500

CPC classification number: H03H7/42 ,  H01F17/0013 ,  H01F19/04 ,  H01F2021/125 ,  H01L23/5227 ,  H01L23/645 ,  H01L2924/0002 ,  Y10T29/4902 ,  Y10T29/49135 ,  H01L2924/00

Abstract: A transformer balun is obtained that is symmetrical in structure, provides high current, or high voltage, amplification and has high coupling coefficients while maintaining minimal overall size. The balun structure includes primary and secondary metal windings at separate layer interfaces. The primary and secondary metal windings are symmetrical and can have any number of turns, which is only limited by integrated circuit area and capacitance. Accordingly, the primary and secondary windings may be on as many layers as needed. Further, the primary and/or secondary may include a center tap ground, which enables the winding to be used as a differential port.

Abstract translation: 获得在结构上对称的变压器平衡 - 不平衡转换器，提供高电流或高电压放大，并具有高耦合系数，同时保持最小的总体尺寸。 平衡 - 不平衡转换器结构包括在单独层接口处的主金属绕组和次级金属绕组。 主金属绕组和次级金属绕组是对称的，并且可以具有任何数量的匝数，其仅受集成电路面积和电容的限制。 因此，主要和次级绕组可以根据需要在尽可能多的层上。 此外，主和/或次级可以包括中心抽头接地，其使得绕组能够用作差动端口。

公开(公告)号：US07171739B2

公开(公告)日：2007-02-06

申请号：US10727378

申请日：2003-12-04

Applicant: Hung Yu (David) Yang ,  Jesse A. Castaneda ,  Reza Rofougaran

Inventor： Hung Yu (David) Yang ,  Jesse A. Castaneda ,  Reza Rofougaran

IPC: H01F7/06

CPC classification number: H03H7/42 ,  H01F17/0013 ,  H01F19/04 ,  H01F2021/125 ,  H01L23/5227 ,  H01L23/645 ,  H01L2924/0002 ,  Y10T29/4902 ,  Y10T29/49135 ,  H01L2924/00

Abstract: A method of manufacturing an on-chip transformer balun includes creating, on a semiconductor substrate, a primary winding having at least one substantially symmetrical primary turn on a first dielectric layer and at least one metal bridge on a second layer. A secondary winding is created on the semiconductor substrate, the secondary winding having at least one substantially symmetrical secondary turn on a third dielectric layer and at least one metal bridge on a fourth dielectric layer. In an alternative embodiment, the primary winding has at least one first primary turn on a first dielectric layer and at least one second primary turn on a second dielectric layer and at least one via that operably connects the first primary turn to the second primary turn. The secondary winding has at least one first secondary turn on a third dielectric layer and at least one second secondary turn on a fourth dielectric layer.

Abstract translation: 制造片上变压器平衡 - 不平衡变压器的方法包括在半导体衬底上形成在第一介电层上具有至少一个基本对称的初级绕组的初级绕组和在第二层上的至少一个金属桥。 在半导体衬底上产生次级绕组，次级绕组在第三电介质层上具有至少一个基本对称的次级绕组，在第四介电层上具有至少一个金属桥。 在替代实施例中，初级绕组在第一电介质层上具有至少一个第一初级绕组，在第二电介质层上具有至少一个第二初级转弯，以及至少一个通孔，其可操作地将第一初级转弯连接到第二初级转弯。 次级绕组在第三电介质层上具有至少一个第一次级转弯，在第四电介质层上具有至少一个第二次级转弯。

公开(公告)号：US06882263B2

公开(公告)日：2005-04-19

申请号：US10844930

申请日：2004-05-13

Applicant: Hung Yu Yang ,  Jesse A Castaneda ,  Reza Rofougaran

Inventor： Hung Yu Yang ,  Jesse A Castaneda ,  Reza Rofougaran

IPC: H01F17/00 ,  H01F19/04 ,  H03H7/42 ,  H01F5/00

CPC classification number: H03H7/42 ,  H01F17/0013 ,  H01F19/04 ,  H01F2021/125 ,  H01L23/5227 ,  H01L23/645 ,  H01L2924/0002 ,  Y10T29/4902 ,  Y10T29/49135 ,  H01L2924/00

Abstract: A transformer balun is obtained that is symmetrical in structure, provides high current, or high voltage, amplification and has high coupling coefficients while maintaining minimal overall size. The balun structure includes primary and secondary metal windings at separate layer interfaces. The primary and secondary metal windings are symmetrical and can have any number of turns, which is only limited by integrated circuit area and capacitance. Accordingly, the, primary and secondary windings may be on as many layers as needed. Further, the primary and/or secondary may include a center tap ground, which enables the winding to be used as a differential port.

Abstract translation: 获得在结构上对称的变压器平衡 - 不平衡转换器，提供高电流或高电压放大，并具有高耦合系数，同时保持最小的总体尺寸。 平衡 - 不平衡转换器结构包括在单独层接口处的主金属绕组和次级金属绕组。 主金属绕组和次级金属绕组是对称的，并且可以具有任何数量的匝数，其仅受集成电路面积和电容的限制。 因此，初级和次级绕组可以根据需要在尽可能多的层上。 此外，主和/或次级可以包括中心抽头接地，其使得绕组能够用作差动端口。