公开(公告)号：US20080261384A1

公开(公告)日：2008-10-23

申请号：US11736904

申请日：2007-04-18

申请人： Zhi-Qiang Sun ,  Xi PEI ,  Tien-Cheng Lan ,  Yu-Jou Chen ,  Guo-Fu Zhou ,  Kai-Ping Huang ,  Hong-Siek Gan ,  Jian-Peng Yan ,  Kai YANG ,  Sheng ZHANG

发明人： Zhi-Qiang Sun ,  Xi PEI ,  Tien-Cheng Lan ,  Yu-Jou Chen ,  Guo-Fu Zhou ,  Kai-Ping Huang ,  Hong-Siek Gan ,  Jian-Peng Yan ,  Kai YANG ,  Sheng ZHANG

IPC分类号： H01L21/425 ,  G03C5/00

CPC分类号： H01L21/31133 ,  G03F7/427 ,  H01L21/31138

摘要： A method of removing a photoresist layer is provided. An ion implantation process has been performed on the photoresist layer to transform a surface of the photoresist layer to a crust and a soft photoresist layer remains within the crust. The method includes performing a first removing step to remove the crust, such that the soft photoresist layer is exposed. Thereafter, a second removing step is performed to remove the soft photoresist layer. The first and the second removing steps are performed in difference chambers, and a temperature for performing the first removing step is lower than that for performing the second removing step and lower than a gasification temperature of a solvent in the soft photoresist layer.

摘要翻译： 提供了去除光致抗蚀剂层的方法。 已经在光致抗蚀剂层上进行了离子注入工艺，以将光致抗蚀剂层的表面转化为外壳，并且软的光致抗蚀剂层保留在外壳内。 该方法包括执行第一去除步骤以除去外壳，使得软的光致抗蚀剂层被暴露。 此后，执行第二去除步骤以去除软光致抗蚀剂层。 第一和第二除去步骤在差分室中进行，用于进行第一除去步骤的温度低于进行第二除去步骤的温度，而低于软质光致抗蚀剂层中溶剂的气化温度。