公开(公告)号：US07254023B2

公开(公告)日：2007-08-07

申请号：US11265399

申请日：2005-11-01

申请人： Cui-Jun Lu ,  Ling-Bo Cao ,  Zhi-Qiang Sun

发明人： Cui-Jun Lu ,  Ling-Bo Cao ,  Zhi-Qiang Sun

IPC分类号： H05K7/20 ,  F28F7/00

CPC分类号： H01L23/467 ,  H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat dissipation assembly includes a blower holder, a blower, a first heat sink and a second heat sink. The blower includes an inlet and an outlet and is attached to the blower holder. The blower holder is secured to the first heat sink with the inlet of the blower exposed to the first heat sink. The second heat sink is mounted to the blower holder and confronts the outlet of the blower. The second heat sink thermally connects with the first heat sink via heat pipes.

摘要翻译： 散热组件包括鼓风机保持器，鼓风机，第一散热器和第二散热器。 鼓风机包括入口和出口，并连接到鼓风机支架。 鼓风机保持器固定到第一散热器，鼓风机的入口暴露于第一散热器。 第二散热器安装在鼓风机支架上并面对鼓风机的出口。 第二散热器通过热管与第一散热器热连接。

公开(公告)号：US20070097644A1

公开(公告)日：2007-05-03

申请号：US11265399

申请日：2005-11-01

申请人： Cui-Jun Lu ,  Ling-Bo Cao ,  Zhi-Qiang Sun

发明人： Cui-Jun Lu ,  Ling-Bo Cao ,  Zhi-Qiang Sun

IPC分类号： H05K7/20

CPC分类号： H01L23/467 ,  H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat dissipation assembly includes a blower holder, a blower, a first heat sink and a second heat sink. The blower includes an inlet and an outlet and is attached to the blower holder. The blower holder is secured to the first heat sink with the inlet of the blower exposed to the first heat sink. The second heat sink is mounted to the blower holder and confronts the outlet of the blower. The second heat sink thermally connects with the first heat sink via heat pipes.

公开(公告)号：US20090042388A1

公开(公告)日：2009-02-12

申请号：US11836782

申请日：2007-08-10

申请人： Zhi-Qiang Sun ,  Tien-Cheng Lan ,  Hua-Kuo Lee ,  Jing-Hao Chen ,  Wen-Chun Huang ,  Run-Shun Wang ,  Jing-Ling Wang ,  Da-Jiang Yang ,  Chee-Siang Ong

发明人： Zhi-Qiang Sun ,  Tien-Cheng Lan ,  Hua-Kuo Lee ,  Jing-Hao Chen ,  Wen-Chun Huang ,  Run-Shun Wang ,  Jing-Ling Wang ,  Da-Jiang Yang ,  Chee-Siang Ong

IPC分类号： H01L21/302

CPC分类号： H01L21/02063

摘要： A semiconductor substrate is first provided. The semiconductor substrate includes a material layer and a patterned photoresist layer disposed on the material layer. Subsequently, a contact etching process is performed on the material layer by utilizing the patterned photoresist layer as an etching mask so to form an etched hole in the material layer. Thereafter, a solvent cleaning process is carried out on the semiconductor substrate by utilizing a cleaning solvent. Next, a water cleaning process is performed on the semiconductor substrate by utilizing deionized water. The temperature of the deionized water is in a range from 30° C. to 99° C.

摘要翻译： 首先提供半导体衬底。 半导体衬底包括材料层和设置在材料层上的图案化光致抗蚀剂层。 随后，通过利用图案化的光致抗蚀剂层作为蚀刻掩模在材料层上进行接触蚀刻处理，以在材料层中形成蚀刻孔。 此后，通过利用清洗溶剂在半导体衬底上进行溶剂清洗处理。 接下来，通过利用去离子水在半导体基板上进行水清洗处理。 去离子水的温度在30℃至99℃的范围内。

公开(公告)号：US20080261384A1

公开(公告)日：2008-10-23

申请号：US11736904

申请日：2007-04-18

申请人： Zhi-Qiang Sun ,  Xi PEI ,  Tien-Cheng Lan ,  Yu-Jou Chen ,  Guo-Fu Zhou ,  Kai-Ping Huang ,  Hong-Siek Gan ,  Jian-Peng Yan ,  Kai YANG ,  Sheng ZHANG

发明人： Zhi-Qiang Sun ,  Xi PEI ,  Tien-Cheng Lan ,  Yu-Jou Chen ,  Guo-Fu Zhou ,  Kai-Ping Huang ,  Hong-Siek Gan ,  Jian-Peng Yan ,  Kai YANG ,  Sheng ZHANG

IPC分类号： H01L21/425 ,  G03C5/00

CPC分类号： H01L21/31133 ,  G03F7/427 ,  H01L21/31138

摘要： A method of removing a photoresist layer is provided. An ion implantation process has been performed on the photoresist layer to transform a surface of the photoresist layer to a crust and a soft photoresist layer remains within the crust. The method includes performing a first removing step to remove the crust, such that the soft photoresist layer is exposed. Thereafter, a second removing step is performed to remove the soft photoresist layer. The first and the second removing steps are performed in difference chambers, and a temperature for performing the first removing step is lower than that for performing the second removing step and lower than a gasification temperature of a solvent in the soft photoresist layer.

摘要翻译： 提供了去除光致抗蚀剂层的方法。 已经在光致抗蚀剂层上进行了离子注入工艺，以将光致抗蚀剂层的表面转化为外壳，并且软的光致抗蚀剂层保留在外壳内。 该方法包括执行第一去除步骤以除去外壳，使得软的光致抗蚀剂层被暴露。 此后，执行第二去除步骤以去除软光致抗蚀剂层。 第一和第二除去步骤在差分室中进行，用于进行第一除去步骤的温度低于进行第二除去步骤的温度，而低于软质光致抗蚀剂层中溶剂的气化温度。