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1.
公开(公告)号:US07635648B2
公开(公告)日:2009-12-22
申请号:US12100557
申请日:2008-04-10
申请人: Igor Peidous , Victor Ku , Joe Piccirillo
发明人: Igor Peidous , Victor Ku , Joe Piccirillo
IPC分类号: H01L21/311
CPC分类号: H01L29/78 , H01L21/28052 , H01L21/28079 , H01L21/823842 , H01L21/823857 , H01L29/517
摘要: A method for fabricating dual material gate structures in a device is provided. The dual material gate structures have different gate electrode materials in different regions of the device. In one embodiment, the method includes providing a substrate having a patterned first gate electrode and a patterned first gate dielectric layer disposed on the substrate, removing a portion of the first gate electrode from the substrate to define a trench on the substrate, and filling the trench to form a second gate electrode.
摘要翻译: 提供了一种在器件中制造双材料栅极结构的方法。 双材料栅结构在器件的不同区域具有不同的栅电极材料。 在一个实施例中,该方法包括提供具有图案化的第一栅极电极和设置在衬底上的图案化的第一栅极介电层的衬底,从衬底去除第一栅电极的一部分以在衬底上限定沟槽,并填充 沟槽以形成第二栅电极。
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2.
公开(公告)号:US20090258484A1
公开(公告)日:2009-10-15
申请号:US12100557
申请日:2008-04-10
申请人: IGOR PEIDOUS , Victor Ku , Joe Piccirillo
发明人: IGOR PEIDOUS , Victor Ku , Joe Piccirillo
IPC分类号: H01L21/3205
CPC分类号: H01L29/78 , H01L21/28052 , H01L21/28079 , H01L21/823842 , H01L21/823857 , H01L29/517
摘要: A method for fabricating dual material gate structures in a device is provided. The dual material gate structures have different gate electrode materials in different regions of the device. In one embodiment, the method includes providing a substrate having a patterned first gate electrode and a patterned first gate dielectric layer disposed on the substrate, removing a portion of the first gate electrode from the substrate to define a trench on the substrate, and filling the trench to form a second gate electrode.
摘要翻译: 提供了一种在器件中制造双材料栅极结构的方法。 双材料栅结构在器件的不同区域具有不同的栅电极材料。 在一个实施例中,该方法包括提供具有图案化的第一栅极电极和设置在衬底上的图案化的第一栅极介电层的衬底,从衬底去除第一栅电极的一部分以在衬底上限定沟槽,并填充 沟槽以形成第二栅电极。
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