公开(公告)号：US20080299723A1

公开(公告)日：2008-12-04

申请号：US11757763

申请日：2007-06-04

Applicant: C. C. Wu ,  Chi-Feng Huang ,  Chun-Hung Chen ,  Chih-Ping Chao ,  John Chern

Inventor： C. C. Wu ,  Chi-Feng Huang ,  Chun-Hung Chen ,  Chih-Ping Chao ,  John Chern

IPC: H01L21/82

CPC classification number: H01L27/0629 ,  H01L29/7833

Abstract: A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the dielectric layer and the conductive layer after forming the dielectric layer so as to form a conductive region under the dielectric layer, wherein the conductive layer is a top electrode of the capacitor and the conductive region is a bottom electrode of the capacitor.

Abstract translation: 形成电容器的方法包括在衬底上形成电介质层。 在电介质层上形成导电层。 在形成电介质层之后，通过介电层和导电层中的至少一个注入掺杂剂，以在电介质层下方形成导电区域，其中导电层是电容器的顶部电极，导电区域是底部 电容器的电极。

公开(公告)号：US20050082075A1

公开(公告)日：2005-04-21

申请号：US10823874

申请日：2004-04-14

Applicant: Wai-Yi Lien ,  Chung-Long Chang ,  Jyh-Chyurn Guo ,  John Chern

Inventor： Wai-Yi Lien ,  Chung-Long Chang ,  Jyh-Chyurn Guo ,  John Chern

IPC: H01L21/82 ,  H01L23/522 ,  H01L23/58 ,  H01L27/02 ,  H05K9/00

CPC classification number: H01L23/585 ,  H01L23/5225 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Disclosed is a semiconductor radio frequency (RF) device having a shielding structure for minimizing coupling between RF passive components and conductive routing for active components. In one example, the device includes at least one shielding layer formed between the RF passive components and conductive routing. The shielding layer includes at least one opening. In another example, a second shielding layer may be used. The second shielding layer may also have an opening, and the openings in the first and second shielding layers may be offset from one another. The first and second shielding layers may be connected to each other through a guard ring, and may also be connected to a common voltage potential.

Abstract translation: 公开了一种具有用于最小化RF无源部件之间的耦合的屏蔽结构和用于有源部件的导电布线的半导体射频（RF）装置。 在一个示例中，该装置包括形成在RF无源部件和导电布线之间的至少一个屏蔽层。 屏蔽层包括至少一个开口。 在另一示例中，可以使用第二屏蔽层。 第二屏蔽层也可以具有开口，并且第一和第二屏蔽层中的开口可以彼此偏移。 第一和第二屏蔽层可以通过保护环彼此连接，并且还可以连接到公共电压电位。

公开(公告)号：US20050218346A1

公开(公告)日：2005-10-06

申请号：US10816612

申请日：2004-04-02

Applicant: Wen Lin ,  Denny Tang ,  Li-shyue Lai ,  John Chern ,  Jyh-Chyurn Guo ,  Wan-Yih Lien

Inventor： Wen Lin ,  Denny Tang ,  Li-shyue Lai ,  John Chern ,  Jyh-Chyurn Guo ,  Wan-Yih Lien

IPC: H01J37/302

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31788

Abstract: A method and system is disclosed for directing charged particles on predetermined areas on a target semiconductor substrate. After aligning a wafer mask with a semiconductor wafer, with the wafer mask having one or more mask patterns thereon, the charged particles are directed to pass through the mask patterns to land on one or more selected areas on the semiconductor wafer.

Abstract translation: 公开了一种用于将带电粒子引导到目标半导体衬底上的预定区域上的方法和系统。 在将晶片掩模与半导体晶片对准之后，晶片掩模在其上具有一个或多个掩模图案，带电粒子被引导通过掩模图案，以着陆在半导体晶片上的一个或多个选定的区域上。

公开(公告)号：US07521330B2

公开(公告)日：2009-04-21

申请号：US11757763

申请日：2007-06-04

Applicant: Chun Chieh Wu ,  Chi-Feng Huang ,  Chun-Hung Chen ,  Chih-Ping Chao ,  John Chern

Inventor： Chun Chieh Wu ,  Chi-Feng Huang ,  Chun-Hung Chen ,  Chih-Ping Chao ,  John Chern

IPC: H01L21/20

CPC classification number: H01L27/0629 ,  H01L29/7833

Abstract: A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the dielectric layer and the conductive layer after forming the dielectric layer so as to form a conductive region under the dielectric layer, wherein the conductive layer is a top electrode of the capacitor and the conductive region is a bottom electrode of the capacitor.

Abstract translation: 形成电容器的方法包括在衬底上形成电介质层。 在电介质层上形成导电层。 在形成电介质层之后，通过介电层和导电层中的至少一个注入掺杂剂，以在电介质层下方形成导电区域，其中导电层是电容器的顶部电极，导电区域是底部 电容器的电极。

公开(公告)号：US07071478B2

公开(公告)日：2006-07-04

申请号：US10816612

申请日：2004-04-02

Applicant: Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  John Chern ,  Jyh-Chyurn Guo ,  Wan-Yih Lien

Inventor： Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  John Chern ,  Jyh-Chyurn Guo ,  Wan-Yih Lien

IPC: G21K4/00

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31788

Abstract: A method and system is disclosed for directing charged particles on predetermined areas on a target semiconductor substrate. After aligning a wafer mask with a semiconductor wafer, with the wafer mask having one or more mask patterns thereon, the charged particles are directed to pass through the mask patterns to land on one or more selected areas on the semiconductor wafer.

Abstract translation: 公开了一种用于将带电粒子引导到目标半导体衬底上的预定区域上的方法和系统。 在将晶片掩模与半导体晶片对准之后，晶片掩模在其上具有一个或多个掩模图案，带电粒子被引导通过掩模图案，以着陆在半导体晶片上的一个或多个选定的区域上。

公开(公告)号：US06888063B1

公开(公告)日：2005-05-03

申请号：US10823874

申请日：2004-04-14

Applicant: Wai-Yi Lien ,  Chung-Long Chang ,  Jyh-Chyurn Guo ,  John Chern

Inventor： Wai-Yi Lien ,  Chung-Long Chang ,  Jyh-Chyurn Guo ,  John Chern

IPC: H01L21/82 ,  H01L23/522 ,  H01L23/58 ,  H01L27/02 ,  H05K9/00

CPC classification number: H01L23/585 ,  H01L23/5225 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Disclosed is a semiconductor radio frequency (RF) device having a shielding structure for minimizing coupling between RF passive components and conductive routing for active components. In one example, the device includes at least one shielding layer formed between the RF passive components and conductive routing. The shielding layer includes at least one opening. In another example, a second shielding layer may be used. The second shielding layer may also have an opening, and the openings in the first and second shielding layers may be offset from one another. The first and second shielding layers may be connected to each other through a guard ring, and may also be connected to a common voltage potential.

Abstract translation: 公开了一种具有用于最小化RF无源部件之间的耦合的屏蔽结构和用于有源部件的导电布线的半导体射频（RF）装置。 在一个示例中，该装置包括形成在RF无源部件和导电布线之间的至少一个屏蔽层。 屏蔽层包括至少一个开口。 在另一示例中，可以使用第二屏蔽层。 第二屏蔽层也可以具有开口，并且第一和第二屏蔽层中的开口可以彼此偏移。 第一和第二屏蔽层可以通过保护环彼此连接，并且还可以连接到公共电压电位。