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公开(公告)号：US6076678A
公开(公告)日：2000-06-20
申请号：US280928
申请日：1999-03-29
申请人： John M. Clayton, Jr.
发明人： John M. Clayton, Jr.
CPC分类号： A01M31/006 , A22B5/00
摘要： An animal carcass wrapping kit for use by hunters in the field to decrease the possibility of deer tick infection, the carcass wrapping kit having a wrap cloth positioned within a hermetically sealed housing member, the wrap cloth being impregnated with a deer tick repellant prior to its positioning within the hermetically sealed housing member or while in the hermetically sealed housing member immediately prior to use by way of a fracturable ampule of vial within the hermetically sealed housing member containing the deer tick repellant.
摘要翻译： 一种用于野外猎人使用的动物屠体包装工具，以减少鹿蜱感染的可能性，该胎体包装用具具有位于气密密封的壳体构件内的包裹布，该包裹布在其之前被浸入鹿蜱排斥剂 定位在密封的壳体部件内，或者在密封的壳体部件中，在密封的外壳部件中，在容纳鹿蜱排斥剂之前，立即在使用之前通过可分离的小瓶安瓿。
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2.发明申请公开(公告)号：US20080296771A1
公开(公告)日：2008-12-04
申请号：US11756020
申请日：2007-05-31
CPC分类号： H01L29/66068 , H01L21/0475 , H01L21/0485 , H01L21/268 , H01L23/4827 , H01L29/1095 , H01L29/7395 , H01L2224/04026 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/10271 , H01L2924/10272 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.
摘要翻译： 通过在n型碳化硅衬底上形成p型碳化硅外延层并在p型碳化硅外延层上形成碳化硅功率器件结构来制造碳化硅功率器件。 至少部分去除n型碳化硅衬底，以露出p型碳化硅外延层。 在露出的至少一些p型碳化硅外延层上形成欧姆接触。 通过至少部分去除n型碳化硅衬底并在p型碳化硅外延层上形成欧姆接触，可以减少或消除使用p型衬底的缺点。 还描述了相关结构。
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3.发明授权Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts 有权碳化硅功率器件包括P型外延层和直接欧姆接触公开(公告)号：US08866150B2
公开(公告)日：2014-10-21
申请号：US11756020
申请日：2007-05-31
IPC分类号： H01L29/15 , H01L23/482 , H01L29/739 , H01L29/66 , H01L29/10 , H01L21/04 , H01L21/268
CPC分类号： H01L29/66068 , H01L21/0475 , H01L21/0485 , H01L21/268 , H01L23/4827 , H01L29/1095 , H01L29/7395 , H01L2224/04026 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/10271 , H01L2924/10272 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.
摘要翻译： 通过在n型碳化硅衬底上形成p型碳化硅外延层并在p型碳化硅外延层上形成碳化硅功率器件结构来制造碳化硅功率器件。 至少部分去除n型碳化硅衬底，以露出p型碳化硅外延层。 在露出的至少一些p型碳化硅外延层上形成欧姆接触。 通过至少部分去除n型碳化硅衬底并在p型碳化硅外延层上形成欧姆接触，可以减少或消除使用p型衬底的缺点。 还描述了相关结构。
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