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公开(公告)号:US07758404B1
公开(公告)日:2010-07-20
申请号:US11253118
申请日:2005-10-17
申请人: Jason A. Ryder , Ji Zhu , Mark Wilcoxson , Fritz Redeker , John P. Parks , Charles Ditmore , Jeffrey G. Gasparitsch
发明人: Jason A. Ryder , Ji Zhu , Mark Wilcoxson , Fritz Redeker , John P. Parks , Charles Ditmore , Jeffrey G. Gasparitsch
IPC分类号: B24B1/00
摘要: An apparatus, system and method for cleaning a substrate edge include a composite applicator that cleans bevel polymers deposited on wafer edges using frictional contact in the presence of fluids. The composite applicator includes a support material and a plurality of abrasive particles distributed within and throughout the support material. The composite applicator cleans the edge of the wafer by allowing frictional contact of the plurality of abrasive particles with the edge of the wafer in the presence of fluids, such as liquid chemicals, to cut, rip and tear the bevel polymer from the edge of the wafer.
摘要翻译: 用于清洁基材边缘的装置,系统和方法包括复合涂布器,其在存在流体的情况下使用摩擦接触来清洁沉积在晶片边缘上的斜面聚合物。 复合施加器包括支撑材料和分布在支撑材料内部和整个支撑材料上的多个磨料颗粒。 复合涂抹器通过在诸如液体化学品的流体的存在下允许多个研磨颗粒与晶片的边缘摩擦接触来清洁晶片的边缘,以从斜边聚合物的边缘切割,撕裂和撕裂斜面聚合物 晶圆。
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公开(公告)号:US06712020B2
公开(公告)日:2004-03-30
申请号:US10170827
申请日:2002-06-12
申请人: Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
发明人: Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
IPC分类号: C23C1600
CPC分类号: H01J37/32009 , H01J37/321
摘要: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.
摘要翻译: 衬底处理室(10)内的环形等离子体源(28)。 环形等离子体源形成具有θ对称性的极向等离子体。 极向等离子体电流基本上平行于等离子体产生结构的表面,从而减少内壁的溅射侵蚀。 等离子体电流类似地基本上平行于腔室内的衬底(34)的工艺表面(32)。 在另一实施例中,衬底和等离子体源之间的成形构件(66)以选定的方式控制等离子体密度,以提高等离子体处理的均匀性。
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公开(公告)号:US06418874B1
公开(公告)日:2002-07-16
申请号:US09584167
申请日:2000-05-25
申请人: Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
发明人: Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
IPC分类号: C23C1600
CPC分类号: H01J37/32009 , H01J37/321
摘要: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.
摘要翻译: 衬底处理室(10)内的环形等离子体源(28)。 环形等离子体源形成具有θ对称性的极向等离子体。 极向等离子体电流基本上平行于等离子体产生结构的表面,从而减少内壁的溅射侵蚀。 等离子体电流类似地基本上平行于腔室内的衬底(34)的工艺表面(32)。 在另一实施例中,衬底和等离子体源之间的成形构件(66)以选定的方式控制等离子体密度,以提高等离子体处理的均匀性。
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