公开(公告)号：US06900505B2

公开(公告)日：2005-05-31

申请号：US10709174

申请日：2004-04-19

申请人： Jonanthan D. Chapple-Sokol ,  Randy W. Mann ,  William J. Murphy ,  Jed H. Rankin ,  Daniel S. Vanslette

发明人： Jonanthan D. Chapple-Sokol ,  Randy W. Mann ,  William J. Murphy ,  Jed H. Rankin ,  Daniel S. Vanslette

IPC分类号： C23C28/00 ,  H01L31/119

CPC分类号： C23C28/00 ,  Y10T428/12

摘要： A structure which ensures against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents damage to an underlying silicide layer by blocking interaction between any fluorine and the underlying silicide that is released when the refractory material is formed.

摘要翻译： 通过首先在耐火材料沉积之前提供连续的多晶硅层，来实现通过物理气相沉积（PVD）或化学气相沉积（CVD）来确保防止耐火材料层沉积下层硅化物层的劣化的结构。 连续多晶硅层优选不大于50，用于牺牲目的，并且通过阻止在形成耐火材料时释放的任何氟和下面的硅化物之间的相互作用来防止对下面的硅化物层的损伤。