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    Method of forming refractory metal contact in an opening, and resulting structure
    1.
    发明授权
    Method of forming refractory metal contact in an opening, and resulting structure 失效
    在开口中形成难熔金属接触的方法，以及结果

    公开(公告)号：US06900505B2

    公开(公告)日：2005-05-31

    申请号：US10709174

    申请日：2004-04-19

    申请人： Jonanthan D. Chapple-Sokol ,  Randy W. Mann ,  William J. Murphy ,  Jed H. Rankin ,  Daniel S. Vanslette

    发明人： Jonanthan D. Chapple-Sokol ,  Randy W. Mann ,  William J. Murphy ,  Jed H. Rankin ,  Daniel S. Vanslette

    IPC分类号： C23C28/00 ,  H01L31/119

    CPC分类号： C23C28/00 ,  Y10T428/12

    摘要： A structure which ensures against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents damage to an underlying silicide layer by blocking interaction between any fluorine and the underlying silicide that is released when the refractory material is formed.

    摘要翻译： 通过首先在耐火材料沉积之前提供连续的多晶硅层，来实现通过物理气相沉积（PVD）或化学气相沉积（CVD）来确保防止耐火材料层沉积下层硅化物层的劣化的结构。 连续多晶硅层优选不大于50，用于牺牲目的，并且通过阻止在形成耐火材料时释放的任何氟和下面的硅化物之间的相互作用来防止对下面的硅化物层的损伤。

    Method of forming refractory metal contact in an opening, and resulting structure
    2.
    发明授权
    Method of forming refractory metal contact in an opening, and resulting structure 失效
    在开口中形成难熔金属接触的方法，以及结果

    公开(公告)号：US06762121B2

    公开(公告)日：2004-07-13

    申请号：US09826036

    申请日：2001-04-04

    申请人： Jonathan D. Chapple-Sokol ,  Randy W. Mann ,  William J. Murphy ,  Jed H. Rankin ,  Daniel S. Vanslette

    发明人： Jonathan D. Chapple-Sokol ,  Randy W. Mann ,  William J. Murphy ,  Jed H. Rankin ,  Daniel S. Vanslette

    IPC分类号： C23C1434

    CPC分类号： C23C28/00 ,  Y10T428/12

    摘要： A method of ensuring against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents interaction between any fluorine that is released during the refractory material deposition step from interacting with the underlying silicide.

    摘要翻译： 通过首先在耐火材料沉积之前提供连续的多晶硅层，来实现通过物理气相沉积（PVD）或化学气相沉积（CVD）确保耐蚀材料层沉积在其下的硅化物层的劣化的方法。 连续多晶硅层，优选不大于50，用于牺牲目的，并且防止在耐火材料沉积步骤期间释放的任何氟与下面的硅化物相互作用的相互作用。

    Sputtered tungsten diffusion barrier for improved interconnect robustness
    9.
    发明授权
    Sputtered tungsten diffusion barrier for improved interconnect robustness 有权
    溅射钨扩散屏障，提高互连鲁棒性

    公开(公告)号：US06245668B1

    公开(公告)日：2001-06-12

    申请号：US09157012

    申请日：1998-09-18

    申请人： Stephen B. Brodsky ,  William J. Murphy ,  Matthew J. Rutten ,  David C. Strippe ,  Daniel S. Vanslette

    发明人： Stephen B. Brodsky ,  William J. Murphy ,  Matthew J. Rutten ,  David C. Strippe ,  Daniel S. Vanslette

    IPC分类号： H01L214763

    CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  C23C14/564 ,  H01L21/2855 ,  H01L21/76876

    摘要： A method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via using non-collimated sputter deposition. The sputter chamber is configured with a pressure of about 1 mTorr to about 10 mTorr with an inert gas flow of at least at least 25 cm3/min to about 150 cm3/min. Shielding inside the chamber is coated with a material, preferably, aluminum oxide, that promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may be included prior to deposition of the tungsten film. Non-collimated sputter deposition increases the target to substrate distance inside the sputter chamber; reduces the heating effect associated with traditional collimated sputtering; and provides more robust diffusion barriers.

    摘要翻译： 在金属层之间使用非平行溅射沉积沉积在通孔中的钨膜形成层间接触或通孔的方法。 溅射室配置有约1mTorr至约10mTorr的压力，惰性气流至少为25cm 3 / min至约150cm 3 / min。 在室内的屏蔽被涂覆有材料，优选氧化铝，其促进钨粘附到屏蔽层上。 在沉积钨膜之前可以包括钛的粘附层。 非准直的溅射沉积将目标增加到溅射室内的衬底距离; 降低与传统准直溅射相关的加热效应; 并提供更强大的扩散屏障。