公开(公告)号：US20070218692A1

公开(公告)日：2007-09-20

申请号：US11488682

申请日：2006-07-19

申请人： Jonathan J. Wolk ,  Walter A. Wolk

发明人： Jonathan J. Wolk ,  Walter A. Wolk

IPC分类号： C09K13/00 ,  H01L21/461 ,  B44C1/22 ,  H01L21/302 ,  C03C15/00

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： A copper-based metal polishing composition includes abrasive particles, a borate, an oxidizing agent, and water. A process for polishing a semiconductor substrate includes positioning the semiconductor substrate; polishing the positioned semiconductor substrate with a first polishing composition including abrasive particles, an ammonium borate, an oxidizing agent, and water, and having a pH of from 6.5 to 9; and further polishing the polished semiconductor substrate with a second polishing composition including abrasive particles, a potassium borate, an oxidizing agent, and water, and having a pH of from 7 to 10.

摘要翻译： 铜基金属抛光组合物包括磨料颗粒，硼酸盐，氧化剂和水。 一种用于抛光半导体衬底的工艺包括定位半导体衬底; 用包含研磨颗粒，硼酸铵，氧化剂和水的第一抛光组合物抛光定位的半导体衬底，并且具有6.5至9的pH; 并且用包括研磨颗粒，硼酸钾，氧化剂和水的第二抛光组合物进一步抛光抛光的半导体衬底，并且具有7至10的pH。

公开(公告)号：US06699402B2

公开(公告)日：2004-03-02

申请号：US10034764

申请日：2001-12-28

申请人： Michael W. Russell ,  Peter C. Van Buskirk ,  Jonathan J. Wolk ,  George E. Emond

发明人： Michael W. Russell ,  Peter C. Van Buskirk ,  Jonathan J. Wolk ,  George E. Emond

IPC分类号： C09K1300

CPC分类号： C09G1/02 ,  C23F3/00 ,  H01L21/3212 ,  H01L28/60

摘要： A chemical mechanical polishing (CMP) slurry composition for removing noble metal material from a substrate having the noble metal material deposited thereon, for example, a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. Such polishing slurry composition contains abrasive polishing particles, a bromide compound, a bromate compound for providing free bromine as an oxidizing agent in the composition, and an organic acid for mediating decomposition of the bromate compound in the composition. The CMP slurry composition of the invention is particularly effective for planarization and/or removal of noble metal(s) from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.

摘要翻译： 一种用于从其上沉积有贵金属材料的基板除去贵金属材料的化学机械抛光（CMP）浆料组合物，例如包括贵金属材料层的半导体器件结构，例如铱，被图案化为用作 电极。 这种抛光浆料组合物含有研磨抛光颗粒，溴化物化合物，用于在组合物中提供游离溴作为氧化剂的溴酸盐化合物，以及用于介导组合物中溴酸盐化合物分解的有机酸。 本发明的CMP浆料组合物在诸如制造铁电体或高介电常数电容器器件的应用中对于从衬底的平坦化和/或去除贵金属是特别有效的。

公开(公告)号：US06395194B1

公开(公告)日：2002-05-28

申请号：US09216679

申请日：1998-12-18

申请人： Michael W. Russell ,  Peter C. Van Buskirk ,  Jonathan J. Wolk ,  George E. Emond

发明人： Michael W. Russell ,  Peter C. Van Buskirk ,  Jonathan J. Wolk ,  George E. Emond

IPC分类号： C09K1300

CPC分类号： C09G1/02 ,  C23F3/00 ,  H01L21/3212 ,  H01L28/60

摘要： A method of removing noble metal material from a substrate having the noble metal material deposited thereon, such as a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. The substrate is subjected to chemical mechanical polishing with a chemical mechanical polishing composition containing abrasive polishing particles and a halide-based oxidizing agent. The CMP composition and method of the invention provide efficient planarization and noble metal material removal from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.

摘要翻译： 从其上沉积有贵金属材料的基板去除贵金属材料的方法，例如在其上包括图案化为电极的贵金属材料（例如铱）的层的半导体器件结构。 用含有研磨抛光颗粒和卤化物基氧化剂的化学机械抛光组合物对衬底进行化学机械抛光。 本发明的CMP组合物和方法在诸如铁电或高介电常数电容器器件的制造等应用中提供了有效的平面化和从衬底去除贵金属材料。