公开(公告)号：US09373591B2

公开(公告)日：2016-06-21

申请号：US12938325

申请日：2010-11-02

申请人： Jong-yeul Jeong

发明人： Jong-yeul Jeong

IPC分类号： H01L23/528 ,  H01L23/58 ,  H01L23/00

CPC分类号： H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/585 ,  H01L24/03 ,  H01L24/04 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05096 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48624 ,  H01L2224/48666 ,  H01L2224/48866 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device which prevents a crack from occurring on a pad region is provided. The semiconductor device includes a lower pad, an upper pad which is formed above the lower pad, an insulation layer which is formed between the lower pad and the upper pad, a via net for electrically connecting the lower pad and the upper pad in the insulation layer, the via net having a net shape in which a unit grid is connected with its adjacent unit grids to form a net structure, and at least one via hole for electrically connecting the lower pad and the upper pad in the unit grid of the via net.

摘要翻译： 提供了防止在焊盘区域上发生裂纹的半导体器件。 半导体器件包括下焊盘，形成在下焊盘上方的上焊盘，形成在下焊盘和上焊盘之间的绝缘层，用于将绝缘层和上焊盘电绝缘的通孔网 所述通孔网具有网格形状，其中单位格栅与其相邻的单元格栅连接以形成网状结构;以及至少一个通孔，用于将所述下部焊盘和所述上部焊盘电连接在所述通孔的单元网格中 净。

公开(公告)号：US20140035146A1

公开(公告)日：2014-02-06

申请号：US13714866

申请日：2012-12-14

申请人： Kwan-soo Kim ,  Tae-jong Lee ,  Kang-sup Shin ,  Si-bum Kim ,  Yang-beom Kang ,  Jong-yeul Jeong

发明人： Kwan-soo Kim ,  Tae-jong Lee ,  Kang-sup Shin ,  Si-bum Kim ,  Yang-beom Kang ,  Jong-yeul Jeong

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L21/76801 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/5227 ,  H01L23/5283 ,  H01L23/5286 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/0001

摘要： A metal wiring for applying a voltage to a semiconductor component of a semiconductor device, the semiconductor device comprising a low voltage applying region adjacent to a high voltage applying region, is provide. The metal wiring includes: an isolator region, a first lower metal layer electrically connected to the semiconductor component, a first upper metal layer configured to be electrically connected to an external power supply, and a plurality of inter-metal dielectric layers deposited between the first lower metal layer and the first upper metal layer, each of the plurality of inter-metal dielectric layers comprising at least one contact plug for providing an electrical connection between the first lower metal layer and the first upper metal layer.

摘要翻译： 提供一种用于向半导体器件的半导体部件施加电压的金属布线，该半导体器件包括与高电压施加区域相邻的低电压施加区域。 金属布线包括：隔离器区域，电连接到半导体部件的第一下金属层，被配置为电连接到外部电源的第一上金属层，以及沉积在第一 下金属层和第一上金属层，多个金属间介电层中的每一个包括至少一个用于在第一下金属层和第一上金属层之间提供电连接的接触插塞。

公开(公告)号：US20110272818A1

公开(公告)日：2011-11-10

申请号：US12938325

申请日：2010-11-02

申请人： Jong-yeul Jeong

发明人： Jong-yeul Jeong

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/585 ,  H01L24/03 ,  H01L24/04 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05096 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48624 ,  H01L2224/48666 ,  H01L2224/48866 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device which prevents a crack from occurring on a pad region is provided. The semiconductor device includes a lower pad, an upper pad which is formed above the lower pad, an insulation layer which is formed between the lower pad and the upper pad, a via net for electrically connecting the lower pad and the upper pad in the insulation layer, the via net having a net shape in which a unit grid is connected with its adjacent unit grids to form a net structure, and at least one via hole for electrically connecting the lower pad and the upper pad in the unit grid of the via net.

摘要翻译： 提供了防止在焊盘区域上发生裂纹的半导体器件。 半导体器件包括下焊盘，形成在下焊盘上方的上焊盘，形成在下焊盘和上焊盘之间的绝缘层，用于将绝缘层和上焊盘电绝缘的通孔网 所述通孔网具有网格形状，其中单位格栅与其相邻的单元格栅连接以形成网状结构;以及至少一个通孔，用于将所述下部焊盘和所述上部焊盘电连接在所述通孔的单元网格中 净。