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公开(公告)号:US11876072B2
公开(公告)日:2024-01-16
申请号:US17465328
申请日:2021-09-02
发明人: Wei-Zhong Li , Yi-Ting Shih , Chien-Chung Wang , Hsih-Yang Chiu
IPC分类号: H01L23/00
CPC分类号: H01L24/85 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/03831 , H01L2224/04042 , H01L2224/48824 , H01L2224/85031 , H01L2224/85359
摘要: A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).
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公开(公告)号:US09887172B2
公开(公告)日:2018-02-06
申请号:US15305584
申请日:2015-09-17
发明人: Daizo Oda , Motoki Eto , Kazuyuki Saito , Teruo Haibara , Ryo Oishi , Takashi Yamada , Tomohiro Uno
CPC分类号: H01L24/45 , B32B15/00 , C22C5/04 , C22C9/00 , C22C9/06 , H01L24/43 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45015 , H01L2224/45105 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/00011 , H01L2924/00014 , H01L2924/01014 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/01031 , H01L2924/01032 , H01L2924/01028 , H01L2924/01077 , H01L2924/01078 , H01L2924/01005 , H01L2924/01015 , H01L2924/01012 , H01L2924/01029 , H01L2924/00012 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/013 , H01L2924/01007 , H01L2924/01001 , H01L2924/00013 , H01L2924/01004 , H01L2924/01046 , H01L2924/01033
摘要: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
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公开(公告)号:US09831212B2
公开(公告)日:2017-11-28
申请号:US14503148
申请日:2014-09-30
申请人: ROHM CO., LTD.
发明人: Mamoru Yamagami , Kenji Fujii
IPC分类号: H01L23/492 , H01L23/00 , H01L23/495 , H01L23/31 , H01L23/525 , H01L23/532
CPC分类号: H01L24/49 , H01L23/3107 , H01L23/49524 , H01L23/49548 , H01L23/525 , H01L23/53223 , H01L23/53238 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/02375 , H01L2224/0346 , H01L2224/0347 , H01L2224/0391 , H01L2224/03914 , H01L2224/0401 , H01L2224/04034 , H01L2224/04042 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05026 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05548 , H01L2224/05554 , H01L2224/05557 , H01L2224/05567 , H01L2224/05571 , H01L2224/05583 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/08245 , H01L2224/13024 , H01L2224/13076 , H01L2224/131 , H01L2224/13147 , H01L2224/13582 , H01L2224/13655 , H01L2224/13664 , H01L2224/1411 , H01L2224/16245 , H01L2224/37147 , H01L2224/40245 , H01L2224/40247 , H01L2224/40479 , H01L2224/40491 , H01L2224/40499 , H01L2224/40993 , H01L2224/4112 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48247 , H01L2224/48824 , H01L2224/48847 , H01L2224/48855 , H01L2224/4912 , H01L2224/49177 , H01L2224/73221 , H01L2224/8485 , H01L2924/00012 , H01L2924/00014 , H01L2924/181 , H01L2924/20754 , H01L2924/351 , H01L2924/00 , H01L2924/2075 , H01L2924/20757 , H01L2924/20756 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20755 , H01L2924/014 , H01L2224/051
摘要: An inventive semiconductor device includes: a semiconductor chip including an integrated circuit; a plurality of electrode pads provided on the semiconductor chip and connected to the integrated circuit; a rewiring to which the electrode pads are electrically connected together, the rewiring being exposed on an outermost surface of the semiconductor chip and having an exposed surface area greater than the total area of the electrode pads; and a resin package which seals the semiconductor chip.
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公开(公告)号:US09754912B2
公开(公告)日:2017-09-05
申请号:US15181740
申请日:2016-06-14
发明人: Khalil Hosseini , Matthias Stecher
IPC分类号: H01L21/44 , H01L23/00 , H01L23/532 , H01L21/56
CPC分类号: H01L24/48 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/81 , H01L24/85 , H01L2224/0347 , H01L2224/04042 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48847 , H01L2224/73257 , H01L2224/81801 , H01L2224/85201 , H01L2224/85205 , H01L2224/85375 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20104 , H01L2924/20105 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00014 , H01L2224/05164 , H01L2924/00 , H01L2924/013 , H01L2924/2075 , H01L2924/00012 , H01L2924/01006
摘要: An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.
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公开(公告)号:US09704797B2
公开(公告)日:2017-07-11
申请号:US14118485
申请日:2011-05-18
申请人: Zhong Lu , Fen Yu , Chin Tien Chiu , Cheeman Yu , Fuqiang Xiao
发明人: Zhong Lu , Fen Yu , Chin Tien Chiu , Cheeman Yu , Fuqiang Xiao
IPC分类号: H01L23/00 , H01L23/498 , H01L25/065 , H01L25/00 , H01L21/768
CPC分类号: H01L23/49866 , H01L21/768 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/85 , H01L25/0657 , H01L25/50 , H01L2224/03013 , H01L2224/03614 , H01L2224/04042 , H01L2224/05026 , H01L2224/05124 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/06145 , H01L2224/06155 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45565 , H01L2224/45664 , H01L2224/48091 , H01L2224/48096 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/48247 , H01L2224/48456 , H01L2224/48465 , H01L2224/4847 , H01L2224/48471 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/49175 , H01L2224/73265 , H01L2224/78301 , H01L2224/78349 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85399 , H01L2224/85948 , H01L2224/92247 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01079 , H01L2924/20104 , H01L2924/20105 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/00 , H01L2924/00012 , H01L2224/48095
摘要: A wire bonded structure for a semiconductor device is disclosed. The wire bonded structure comprises a bonding pad; and a continuous length of wire mutually diffused with the bonding pad, the wire electrically coupling the bonding pad with a first electrical contact and a second electrical contact different from the first electrical contact.
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公开(公告)号:US20170194280A1
公开(公告)日:2017-07-06
申请号:US15305584
申请日:2015-09-17
发明人: Daizo ODA , Motoki ETO , Kazuyuki SAITO , Teruo HAIBARA , Ryo OISHI , Takashi YAMADA , Tomohiro UNO
IPC分类号: H01L23/00
CPC分类号: H01L24/45 , B32B15/00 , C22C5/04 , C22C9/00 , C22C9/06 , H01L24/43 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45015 , H01L2224/45105 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/00011 , H01L2924/00014 , H01L2924/01014 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/01031 , H01L2924/01032 , H01L2924/01028 , H01L2924/01077 , H01L2924/01078 , H01L2924/01005 , H01L2924/01015 , H01L2924/01012 , H01L2924/01029 , H01L2924/00012 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/013 , H01L2924/01007 , H01L2924/01001 , H01L2924/00013 , H01L2924/01004 , H01L2924/01046 , H01L2924/01033
摘要: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
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公开(公告)号:US20170194240A1
公开(公告)日:2017-07-06
申请号:US15385062
申请日:2016-12-20
发明人: Soojae PARK , Kyujin LEE
IPC分类号: H01L23/498 , H01L23/00 , H01L21/48
CPC分类号: H01L23/49838 , H01L21/4857 , H01L21/486 , H01L23/49822 , H01L23/49827 , H01L23/49866 , H01L23/49894 , H01L24/48 , H01L2224/05599 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/48624 , H01L2224/48824 , H01L2224/73265 , H01L2224/85423 , H01L2924/00014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/05432 , H01L2924/15724 , H01L2924/15747 , H01L2924/00 , H01L2924/00012
摘要: A package substrate including an insulating layer having a top surface and a bottom surface opposite to the top surface, at least one first copper pattern disposed in the insulating layer and adjacent to the top surface of the insulating layer, at least one second copper pattern disposed on the bottom surface of the insulating layer, and at least one embedded aluminum pad disposed on the at least one first copper pattern, the at least one embedded aluminum pad disposed in the insulating layer such that a top surface of the at least one embedded aluminum pad is exposed by the insulating layer may be provided.
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公开(公告)号:US09698068B2
公开(公告)日:2017-07-04
申请号:US14794226
申请日:2015-07-08
申请人: ROHM CO., LTD.
发明人: Motoharu Haga , Kaoru Yasuda , Akinori Nii , Yuto Nishiyama
IPC分类号: H01L23/29 , H01L23/31 , H01L23/495 , H01L23/00 , H01L21/56
CPC分类号: H01L23/291 , H01L21/561 , H01L23/3107 , H01L23/3142 , H01L23/3192 , H01L23/4952 , H01L23/49541 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/97 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/32245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48451 , H01L2224/48465 , H01L2224/48824 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/78306 , H01L2224/85181 , H01L2224/85205 , H01L2224/85439 , H01L2224/97 , H01L2924/00011 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01029 , H01L2924/01049
摘要: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.
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公开(公告)号:US09620580B2
公开(公告)日:2017-04-11
申请号:US14284199
申请日:2014-05-21
申请人: MediaTek Inc.
发明人: Tzu-Hung Lin , Cheng-Chou Hung
IPC分类号: H01L27/01 , H01L49/02 , H01L23/522 , H01L23/532 , H01L23/00
CPC分类号: H01L28/10 , H01L23/5227 , H01L23/53238 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2223/6677 , H01L2224/02181 , H01L2224/0345 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05022 , H01L2224/05124 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05582 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/08123 , H01L2224/08265 , H01L2224/11019 , H01L2224/1134 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/1308 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/4502 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85007 , H01L2924/19011 , H01L2924/19042 , H01L2924/19051 , H01L2924/19103 , H01L2924/19104 , H01L2924/00014 , H01L2924/00 , H01L2924/04941 , H01L2924/04953 , H01L2924/014
摘要: The invention provides a semiconductor structure. The semiconductor structure includes a substrate. A first passivation layer is disposed on the substrate. A conductive pad is disposed on the first passivation layer. A second passivation layer is disposed on the first passivation layer. A passive device is disposed on the conductive pad, passing through the second passivation layer. An organic solderability preservative film covers the passive device.
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10.
公开(公告)号:US09612615B2
公开(公告)日:2017-04-04
申请号:US13874983
申请日:2013-05-01
申请人: Megica Corporation
发明人: Mou-Shiung Lin , Jin-Yuan Lee , Hsin-Jung Lo , Ping-Jung Yang , Te-Sheng Liu
IPC分类号: H01L21/00 , G06F1/16 , H01L21/56 , H01L23/48 , H01L23/522 , H01L23/00 , H01L25/065 , H01L25/18 , H01L23/60 , H01L25/00 , G11C5/14 , H01L23/31 , H01L25/16 , H01L23/66
CPC分类号: G06F1/16 , G11C5/147 , H01L21/563 , H01L23/3128 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L23/5223 , H01L23/5227 , H01L23/60 , H01L23/66 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/50 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/16 , H01L25/18 , H01L25/50 , H01L2223/6611 , H01L2223/6666 , H01L2224/02166 , H01L2224/02311 , H01L2224/02313 , H01L2224/02321 , H01L2224/0233 , H01L2224/02331 , H01L2224/0235 , H01L2224/0237 , H01L2224/02371 , H01L2224/02375 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/03612 , H01L2224/03614 , H01L2224/03912 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05024 , H01L2224/05027 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05176 , H01L2224/05181 , H01L2224/05187 , H01L2224/05541 , H01L2224/05548 , H01L2224/05554 , H01L2224/0556 , H01L2224/05567 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/05673 , H01L2224/05676 , H01L2224/11 , H01L2224/11009 , H01L2224/1132 , H01L2224/11334 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/1191 , H01L2224/13 , H01L2224/13006 , H01L2224/1302 , H01L2224/13022 , H01L2224/13024 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13099 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/13294 , H01L2224/133 , H01L2224/13311 , H01L2224/13609 , H01L2224/1403 , H01L2224/1411 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/16265 , H01L2224/17181 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/293 , H01L2224/29339 , H01L2224/32105 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48111 , H01L2224/48145 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48669 , H01L2224/48764 , H01L2224/48769 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/4911 , H01L2224/49175 , H01L2224/4918 , H01L2224/73203 , H01L2224/73204 , H01L2224/73207 , H01L2224/73215 , H01L2224/73253 , H01L2224/73257 , H01L2224/73265 , H01L2224/81191 , H01L2224/81411 , H01L2224/81444 , H01L2224/81801 , H01L2224/81815 , H01L2224/8185 , H01L2224/81895 , H01L2224/81903 , H01L2224/83101 , H01L2224/83104 , H01L2224/83851 , H01L2224/92 , H01L2224/9202 , H01L2224/92125 , H01L2224/92127 , H01L2224/92147 , H01L2224/92225 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06562 , H01L2225/06589 , H01L2225/1023 , H01L2225/1029 , H01L2225/1058 , H01L2225/107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1421 , H01L2924/1433 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/19105 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/48869 , H01L2224/48744 , H01L2924/00012 , H01L2224/03 , H01L2224/0361 , H01L2924/0665 , H01L2224/81 , H01L2224/83 , H01L24/78 , H01L2224/85 , H01L21/56 , H01L21/78 , H01L2924/0635 , H01L2924/07025 , H01L21/304 , H01L21/76898 , H01L2224/0231
摘要: Integrated circuit chips and chip packages are disclosed that include an over-passivation scheme at a top of the integrated circuit chip and a bottom scheme at a bottom of the integrated circuit chip using a top post-passivation technology and a bottom structure technology. The integrated circuit chips can be connected to an external circuit or structure, such as ball-grid-array (BGA) substrate, printed circuit board, semiconductor chip, metal substrate, glass substrate or ceramic substrate, through the over-passivation scheme or the bottom scheme. Related fabrication techniques are described.
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