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    NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT CRYSTALLINITY AND BRIGHTNESS AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT CRYSTALLINITY AND BRIGHTNESS AND METHOD OF MANUFACTURING THE SAME 审中-公开
    具有优异结晶度和亮度的基于氮化物的发光装置及其制造方法

    公开(公告)号：US20120217470A1

    公开(公告)日：2012-08-30

    申请号：US13189519

    申请日：2011-07-24

    申请人： Joo Jin ,  Kun Park

    发明人： Joo Jin ,  Kun Park

    IPC分类号： H01L33/04 ,  H01L33/26

    CPC分类号： H01L21/02513 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L33/007 ,  H01L33/28

    摘要： Disclosed is a nitride-based light emitting device having an inverse p-n structure in which a p-type nitride layer is first formed on a growth substrate. The light emitting device includes a growth substrate, a powder type seed layer for nitride growth formed on the growth substrate, a p-type nitride layer formed on the seed layer for nitride growth, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The p-type nitride layer is first formed on the growth layer and the n-type ZnO layer having a relatively low growth temperature is then formed thereon instead of an n-type nitride layer, thereby providing excellent crystallinity and high brightness. A method of manufacturing the same is also disclosed.

    摘要翻译： 公开了一种具有逆p-n结构的氮化物系发光器件，其中p型氮化物层首先在生长衬底上形成。 发光器件包括生长衬底，在生长衬底上形成的用于氮化物生长的粉末种子层，形成在用于氮化物生长的籽晶层上的p型氮化物层，形成在p型氮化物上的发光活性层 层和形成在发光有源层上的n型ZnO层。 首先在生长层上形成p型氮化物层，然后在其上形成具有较低生长温度的n型ZnO层，而不是n型氮化物层，从而提供优异的结晶度和高亮度。 还公开了一种制造该方法的方法。

    CHEMICAL VAPOR DEPOSITION APPARATUS AND A CONTROL METHOD THEREOF
    9.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS AND A CONTROL METHOD THEREOF 审中-公开
    化学蒸气沉积装置及其控制方法

    公开(公告)号：US20110159183A1

    公开(公告)日：2011-06-30

    申请号：US12914928

    申请日：2010-10-28

    申请人： Joo Jin

    发明人： Joo Jin

    IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46

    CPC分类号： C23C16/303 ,  C23C16/52

    摘要： Disclosed are a chemical vapor deposition (CVD) apparatus and a control method thereof, the CVD apparatus including: a chamber; a susceptor which is provided inside the chamber and on which a substrate is placed; a process-gas supplying unit which is placed above the susceptor and supplies process gas; a sensing tube which is placed above the susceptor and opened toward the susceptor or the substrate; a temperature sensing member which is installed at a side of the sensing tube and senses temperature of the susceptor or substrate through the sensing tube; and a purge-gas supplying unit which injects purge gas into the sensing tube.

    摘要翻译： 公开了化学气相沉积（CVD）装置及其控制方法，该CVD装置包括：腔室; 设置在所述腔室内并且其上放置基板的感受体; 处理气体供给单元，其设置在所述基座的上方并供给处理气体; 感测管，其被放置在基座上方并朝向基座或基板开口; 温度检测构件，其安装在感测管的一侧，并通过感测管感测基座或衬底的温度; 以及将净化气体喷射到感测管中的净化气体供给单元。