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公开(公告)号：US20080037179A1
公开(公告)日：2008-02-14
申请号：US11638379
申请日：2006-12-14
申请人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
发明人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
IPC分类号： G11B5/33
CPC分类号： G11C11/16 , Y10S977/935
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.
摘要翻译： 磁存储器件包括通过隔离晶体管连接到感测线的位线的磁性隧道结（MTJ）。 MTJ包括具有磁性硬轴的铁磁层。 辅助电流线覆盖位线并与位线绝缘。 MTJ可以在第一相对高电阻状态和第二相对低电阻状态之间切换。 辅助电流线沿铁磁层中的磁性硬轴施加磁场，独立于通过MTJ的电流流动来辅助MTJ在第一和第二状态之间切换。
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公开(公告)号：US07298643B2
公开(公告)日：2007-11-20
申请号：US11114305
申请日：2005-04-25
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.
摘要翻译： 一种磁阻存储元件，包括被阻挡层分离的被俘获的磁区和自由磁区。 自由磁区包括至少两个反铁磁耦合铁磁层的层叠，与每个层相关联的层磁矩矢量，所得到的磁矩矢量等于具有振幅小于的磁矩矢量的和 至少40％的振幅最大振幅的磁矩矢量。 对于至少两个铁磁层，各向异性场和/或去磁场张量不相同，由此在施加外部磁场时层磁矩矢量的角度偏差是不同的，这使得能够至少两个 直接写入存储器元件的方法，以及它的初始化。
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公开(公告)号：US20050237796A1
公开(公告)日：2005-10-27
申请号：US11114305
申请日：2005-04-25
CPC分类号： G11C11/16
摘要： A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.
摘要翻译： 一种磁阻存储元件，包括被阻挡层分离的被俘获的磁区和自由磁区。 自由磁区包括至少两个反铁磁耦合铁磁层的层叠，与每个层相关联的层磁矩矢量，所得到的磁矩矢量等于具有振幅小于的磁矩矢量的和 至少40％的振幅最大振幅的磁矩矢量。 对于至少两个铁磁层，各向异性场和/或去磁场张量不相同，由此在施加外部磁场时层磁矩矢量的角度偏差是不同的，这使得能够至少两个 直接写入存储器元件的方法，以及它的初始化。
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公开(公告)号：US07738286B2
公开(公告)日：2010-06-15
申请号：US11638379
申请日：2006-12-14
申请人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
发明人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/935
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.
摘要翻译： 磁存储器件包括通过隔离晶体管连接到感测线的位线的磁性隧道结（MTJ）。 MTJ包括具有磁性硬轴的铁磁层。 辅助电流线覆盖位线并与位线绝缘。 MTJ可以在第一相对高电阻状态和第二相对低电阻状态之间切换。 辅助电流线沿铁磁层中的磁性硬轴施加磁场，独立于通过MTJ的电流流动来辅助MTJ在第一和第二状态之间切换。
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