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    MRAM element
    1.
    发明申请
    MRAM element 有权
    MRAM元素

    公开(公告)号：US20050237796A1

    公开(公告)日：2005-10-27

    申请号：US11114305

    申请日：2005-04-25

    申请人： Joo-Von Kim ,  Thibaut Devolder ,  Claude Chappert ,  Cedric Maufront ,  Richard Fournel

    发明人： Joo-Von Kim ,  Thibaut Devolder ,  Claude Chappert ,  Cedric Maufront ,  Richard Fournel

    IPC分类号： G11C11/16 ,  G11C11/00

    CPC分类号： G11C11/16

    摘要： A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.

    摘要翻译： 一种磁阻存储元件，包括被阻挡层分离的被俘获的磁区和自由磁区。 自由磁区包括至少两个反铁磁耦​​合铁磁层的层叠，与每个层相关联的层磁矩矢量，所得到的磁矩矢量等于具有振幅小于的磁矩矢量的和 至少40％的振幅最大振幅的磁矩矢量。 对于至少两个铁磁层，各向异性场和/或去磁场张量不相同，由此在施加外部磁场时层磁矩矢量的角度偏差是不同的，这使得能够至少两个 直接写入存储器元件的方法，以及它的初始化。

    Magnetoresistive device
    2.
    发明授权
    Magnetoresistive device 有权
    磁阻器件

    公开(公告)号：US09093163B2

    公开(公告)日：2015-07-28

    申请号：US12687550

    申请日：2010-01-14

    申请人： Joerg Wunderlich ,  Jan Zemen ,  Claude Chappert ,  Bryan Gallagher ,  Thibaut Devolder ,  David Williams

    发明人： Joerg Wunderlich ,  Jan Zemen ,  Claude Chappert ,  Bryan Gallagher ,  Thibaut Devolder ,  David Williams

    IPC分类号： G11C11/00 ,  G11C11/16

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1675

    摘要： A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

    摘要翻译： 描述了操作磁阻器件的方法。 该器件包括铁磁区域，其被配置为表现出磁各向异性并允许其磁化在至少第一和第二取向之间切换，并且栅极电容耦合到铁磁区域。 该方法包括将电场脉冲施加到铁磁区域，以使磁各向异性的取向发生变化，以便在第一和第二取向之间切换磁化。

    MAGNETORESISTIVE DEVICE
    5.
    发明申请
    MAGNETORESISTIVE DEVICE 有权
    磁电装置

    公开(公告)号：US20110170339A1

    公开(公告)日：2011-07-14

    申请号：US12687550

    申请日：2010-01-14

    申请人： Joerg Wunderlich ,  Jan Zemen ,  Claude Chappert ,  Bryan Gallagher ,  Thibaut Devolder ,  David Williams

    发明人： Joerg Wunderlich ,  Jan Zemen ,  Claude Chappert ,  Bryan Gallagher ,  Thibaut Devolder ,  David Williams

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1675

    摘要： A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

    摘要翻译： 描述了操作磁阻器件的方法。 该器件包括铁磁区域，其被配置为表现出磁各向异性并允许其磁化在至少第一和第二取向之间切换，并且栅极电容耦合到铁磁区域。 该方法包括将电场脉冲施加到铁磁区域，以使磁各向异性的取向发生变化，以便在第一和第二取向之间切换磁化。

    MRAM element
    6.
    发明授权
    MRAM element 有权
    MRAM元素

    公开(公告)号：US07298643B2

    公开(公告)日：2007-11-20

    申请号：US11114305

    申请日：2005-04-25

    申请人： Joo-Von Kim ,  Thibaut Devolder ,  Claude Chappert ,  Cedric Maufront ,  Richard Fournel

    发明人： Joo-Von Kim ,  Thibaut Devolder ,  Claude Chappert ,  Cedric Maufront ,  Richard Fournel

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.

    摘要翻译： 一种磁阻存储元件，包括被阻挡层分离的被俘获的磁区和自由磁区。 自由磁区包括至少两个反铁磁耦​​合铁磁层的层叠，与每个层相关联的层磁矩矢量，所得到的磁矩矢量等于具有振幅小于的磁矩矢量的和 至少40％的振幅最大振幅的磁矩矢量。 对于至少两个铁磁层，各向异性场和/或去磁场张量不相同，由此在施加外部磁场时层磁矩矢量的角度偏差是不同的，这使得能够至少两个 直接写入存储器元件的方法，以及它的初始化。