Photomask with overlay mark and method of fabricating semiconductor device
    1.
    发明授权
    Photomask with overlay mark and method of fabricating semiconductor device 有权
    具有覆盖标记的光掩模和制造半导体器件的方法

    公开(公告)号:US07732105B2

    公开(公告)日:2010-06-08

    申请号:US11777863

    申请日:2007-07-13

    IPC分类号: G03F1/00 G03F9/00

    CPC分类号: G03F7/70633

    摘要: Provided are a photomask and a method of fabricating a semiconductor device. The photomask includes a photomask substrate including a chip region and a scribe lane region, with an overlay mark formed in the scribe lane region. The overlay mark includes one or more sub-overlay marks. Each of the sub-overlay marks includes a plurality of unit regions sequentially connected to each other and having different widths, where the width of a given unit region is constant.

    摘要翻译: 提供了一种光掩模和一种制造半导体器件的方法。 光掩模包括具有芯片区域和划线路区域的光掩模基板,在划线路区域形成有覆盖标记。 覆盖标记包括一个或多个子覆盖标记。 每个子覆盖标记包括彼此顺序连接并且具有不同宽度的多个单位区域,其中给定单位区域的宽度是恒定的。

    PHOTOMASK WITH OVERLAY MARK AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    2.
    发明申请
    PHOTOMASK WITH OVERLAY MARK AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
    具有覆盖标记的照相机和制造半导体器件的方法

    公开(公告)号:US20080014511A1

    公开(公告)日:2008-01-17

    申请号:US11777863

    申请日:2007-07-13

    IPC分类号: G03C5/00 G03F9/00 G03F1/00

    CPC分类号: G03F7/70633

    摘要: Provided are a photomask and a method of fabricating a semiconductor device. The photomask includes a photomask substrate including a chip region and a scribe lane region, with an overlay mark formed in the scribe lane region. The overlay mark includes one or more sub-overlay marks. Each of the sub-overlay marks includes a plurality of unit regions sequentially connected to each other and having different widths, where the width of a given unit region is constant.

    摘要翻译: 提供了一种光掩模和一种制造半导体器件的方法。 光掩模包括具有芯片区域和划线路区域的光掩模基板,在划线路区域形成有覆盖标记。 覆盖标记包括一个或多个子覆盖标记。 每个子覆盖标记包括彼此顺序连接并且具有不同宽度的多个单位区域,其中给定单位区域的宽度是恒定的。