公开(公告)号：US20100315094A1

公开(公告)日：2010-12-16

申请号：US12805725

申请日：2010-08-17

申请人： Do-Yul Yoo

发明人： Do-Yul Yoo

IPC分类号： G01R31/02

CPC分类号： H01L23/544 ,  G03F7/70633 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an overlay key used for measuring overlay accuracy between first and second layers on a substrate, a first mark may be formed in the first layer, and a second mark may be formed on the second layer. The first mark may include first patterns having a first pitch and extending in a first direction. The second mark may include second patterns extending in substantially the same direction as the first direction and having a second pitch substantially equal to the first pitch. First and second images may be acquired from the first and second marks. The overlay accuracy may be produced from position information of first and second interference fringes formed by overlaying a test image having a third pitch onto the first and second images.

公开(公告)号：US07732105B2

公开(公告)日：2010-06-08

申请号：US11777863

申请日：2007-07-13

申请人： Do-Yul Yoo ,  Ji-Yong You ,  Joong-Sung Kim ,  Hyung-Joo Youn

发明人： Do-Yul Yoo ,  Ji-Yong You ,  Joong-Sung Kim ,  Hyung-Joo Youn

IPC分类号： G03F1/00 ,  G03F9/00

CPC分类号： G03F7/70633

摘要： Provided are a photomask and a method of fabricating a semiconductor device. The photomask includes a photomask substrate including a chip region and a scribe lane region, with an overlay mark formed in the scribe lane region. The overlay mark includes one or more sub-overlay marks. Each of the sub-overlay marks includes a plurality of unit regions sequentially connected to each other and having different widths, where the width of a given unit region is constant.

摘要翻译： 提供了一种光掩模和一种制造半导体器件的方法。 光掩模包括具有芯片区域和划线路区域的光掩模基板，在划线路区域形成有覆盖标记。 覆盖标记包括一个或多个子覆盖标记。 每个子覆盖标记包括彼此顺序连接并且具有不同宽度的多个单位区域，其中给定单位区域的宽度是恒定的。

公开(公告)号：US06841338B2

公开(公告)日：2005-01-11

申请号：US10173375

申请日：2002-06-17

申请人： Dae-youp Lee ,  Jeong-lim Nam ,  Do-yul Yoo ,  Jeung-woo Lee

发明人： Dae-youp Lee ,  Jeong-lim Nam ,  Do-yul Yoo ,  Jeung-woo Lee

IPC分类号： C08F212/14 ,  G03F1/14 ,  G03F7/004 ,  G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/0392 ,  G03F1/50

摘要： A photoresist composition may include formulas 1 and 2:  where R is an acetal group or a ter-butyloxy carbonyl (t-BOC) group, n and m are integers, n/(m+n) is 0.01−0.8, and m/(m+n) is 1−[n/(m+n)],  where r is an integer between 8-40. A method for forming photoresist patterns may include forming a photoresist layer on a semiconductor substrate and exposing and developing the photoresist layer using a mask pattern that includes first areas having a light transmissivity of about 100% and second areas having a light transmissivity of between about 10% and about 30%.

摘要翻译： 光致抗蚀剂组合物可以包括式1和2：其中R是缩醛基或叔丁氧基羰基（t-BOC）基团，n和m是整数，n /（m + n）是0.01-0.8，m / （m + n）是1- [n /（m + n）]，其中r是8-40之间的整数。一种用于形成光致抗蚀剂图案的方法可以包括在半导体衬底上形成光致抗蚀剂层并曝光和显影光致抗蚀剂 层，其使用包括具有约100％的光透射率的第一区域和具有约10％至约30％的透光率的第二区域的掩模图案。

公开(公告)号：US07804596B2

公开(公告)日：2010-09-28

申请号：US11527592

申请日：2006-09-27

申请人： Do-Yul Yoo

发明人： Do-Yul Yoo

IPC分类号： G01B11/00 ,  G01B11/02

CPC分类号： H01L23/544 ,  G03F7/70633 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an overlay key used for measuring overlay accuracy between first and second layers on a substrate, a first mark may be formed in the first layer, and a second mark may be formed on the second layer. The first mark may include first patterns having a first pitch and extending in a first direction. The second mark may include second patterns extending in substantially the same direction as the first direction and having a second pitch substantially equal to the first pitch. First and second images may be acquired from the first and second marks. The overlay accuracy may be produced from position information of first and second interference fringes formed by overlaying a test image having a third pitch onto the first and second images.

摘要翻译： 在用于测量衬底上的第一和第二层之间的覆盖精度的覆盖键中，可以在第一层中形成第一标记，并且可以在第二层上形成第二标记。 第一标记可以包括具有第一间距并沿第一方向延伸的第一图案。 第二标记可以包括沿与第一方向基本相同的方向延伸的第二图案，并具有基本上等于第一间距的第二间距。 可以从第一和第二标记获取第一和第二图像。 可以通过将具有第三间距的测试图像叠加到第一和第二图像上形成的第一和第二干涉条纹的位置信息来产生覆盖精度。

公开(公告)号：US20070077503A1

公开(公告)日：2007-04-05

申请号：US11527592

申请日：2006-09-27

申请人： Do-Yul Yoo

发明人： Do-Yul Yoo

IPC分类号： G03F1/00 ,  G03F9/00 ,  G03C5/00 ,  H01L23/544

CPC分类号： H01L23/544 ,  G03F7/70633 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an overlay key used for measuring overlay accuracy between first and second layers on a substrate, a first mark may be formed in the first layer, and a second mark may be formed on the second layer. The first mark may include first patterns having a first pitch and extending in a first direction. The second mark may include second patterns extending in substantially the same direction as the first direction and having a second pitch substantially equal to the first pitch. First and second images may be acquired from the first and second marks. The overlay accuracy may be produced from position information of first and second interference fringes formed by overlaying a test image having a third pitch onto the first and second images.

摘要翻译： 在用于测量衬底上的第一和第二层之间的覆盖精度的覆盖键中，可以在第一层中形成第一标记，并且可以在第二层上形成第二标记。 第一标记可以包括具有第一间距并沿第一方向延伸的第一图案。 第二标记可以包括沿与第一方向基本相同的方向延伸的第二图案，并具有基本上等于第一间距的第二间距。 可以从第一和第二标记获取第一和第二图像。 可以通过将具有第三间距的测试图像叠加到第一和第二图像上形成的第一和第二干涉条纹的位置信息来产生覆盖精度。

公开(公告)号：US20050002034A1

公开(公告)日：2005-01-06

申请号：US10881201

申请日：2004-06-29

申请人： Do-yul Yoo

发明人： Do-yul Yoo

IPC分类号： H01L21/027 ,  G01B11/00 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F7/70633 ,  G03F9/7076

摘要： An overlay key includes a main scale and a vernier scale, which traverse each other forming a plurality of crossings. The main scale includes a first main sub-scale and a second main sub-scale, which are separated from each other or at least partially overlap each other. The first and second main sub-scales extend in different directions such that they are not parallel to each other. The vernier scale includes a first vernier sub-scale and a second vernier sub-scale, which are separated from each other or at least partially overlap each other. The first and second vernier sub-scales extend in different directions such that they are not parallel to each other. Two measured crossings are obtained when the main scale and the vernier scale cross each other in a measured position. Then, overlay accuracy is measured from coordinate differences between reference crossings and the measured crossings.

摘要翻译： 覆盖键包括主刻度和游标，横向彼此形成多个交叉。 主标尺包括彼此分离或至少部分地彼此重叠的第一主子刻度和第二主子刻度。 第一和第二主子标尺在不同的方向上延伸，使得它们彼此不平行。 游标刻度包括彼此分离或至少部分地彼此重叠的第一游标子尺度和第二游标子尺度。 第一和第二游标子尺度在不同的方向上延伸，使得它们彼此不平行。 当主刻度和游标刻度在测量位置彼此交叉时，获得两个测量的交叉。 然后，根据参考交叉点和测量的交叉点之间的坐标差来测量覆盖精度。

公开(公告)号：US07288848B2

公开(公告)日：2007-10-30

申请号：US10997441

申请日：2004-11-23

申请人： Dong-Hun Lee ,  Jong-Hyon Ahn ,  Do-Yul Yoo ,  Sung-Gun Kang

发明人： Dong-Hun Lee ,  Jong-Hyon Ahn ,  Do-Yul Yoo ,  Sung-Gun Kang

IPC分类号： H01L23/544

CPC分类号： G03F7/70633 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2924/0002 ,  H01L2924/00

摘要： An overlay mark includes at least one hole array formed on a semiconductor substrate and at least one linear trench adjacent to the hole array. The hole array may be formed adjacent to the linear trench along a predetermined direction. When alignment errors among patterns formed at predetermined portion of the semiconductor substrate are detected, the overlay mark may provide a contrast of light with a desired width and a high level so that alignment errors of patterns formed on the semiconductor substrate may be accurately detected and corrected using the overlay mark.

摘要翻译： 覆盖标记包括形成在半导体衬底上的至少一个孔阵列和与孔阵列相邻的至少一个线性沟槽。 孔阵列可以沿着预定方向形成为与线性沟槽相邻。 当检测到在半导体衬底的预定部分形成的图形之间的对准误差时，重叠标记可以提供具有所需宽度和高电平的光的对比度，从而可以精确地检测和校正形成在半导体衬底上的图案的对准误差 使用重叠标记。

公开(公告)号：US07236245B2

公开(公告)日：2007-06-26

申请号：US10881201

申请日：2004-06-29

申请人： Do-yul Yoo

发明人： Do-yul Yoo

IPC分类号： G01B11/00

CPC分类号： G03F7/70633 ,  G03F9/7076

摘要： An overlay key includes a main scale and a vernier scale, which traverse each other forming a plurality of crossings. The main scale includes a first main sub-scale and a second main sub-scale, which are separated from each other or at least partially overlap each other. The first and second main sub-scales extend in different directions such that they are not parallel to each other. The vernier scale includes a first vernier sub-scale and a second vernier sub-scale, which are separated from each other or at least partially overlap each other. The first and second vernier sub-scales extend in different directions such that they are not parallel to each other. Two measured crossings are obtained when the main scale and the vernier scale cross each other in a measured position. Then, overlay accuracy is measured from coordinate differences between reference crossings and the measured crossings.

摘要翻译： 覆盖键包括主刻度和游标，横向彼此形成多个交叉。 主标尺包括彼此分离或至少部分地彼此重叠的第一主子刻度和第二主子刻度。 第一和第二主子标尺在不同的方向上延伸，使得它们彼此不平行。 游标刻度包括彼此分离或至少部分地彼此重叠的第一游标子尺度和第二游标子尺度。 第一和第二游标子尺度在不同的方向上延伸，使得它们彼此不平行。 当主刻度和游标刻度在测量位置彼此交叉时，获得两个测量的交叉。 然后，根据参考交叉点和测量的交叉点之间的坐标差来测量覆盖精度。

公开(公告)号：US20070063317A1

公开(公告)日：2007-03-22

申请号：US11472376

申请日：2006-06-22

申请人： Dae-Joung Kim ,  Dae-Youp Lee ,  Ji-Yong You ,  Chun-Suk Suh ,  Do-Yul Yoo

发明人： Dae-Joung Kim ,  Dae-Youp Lee ,  Ji-Yong You ,  Chun-Suk Suh ,  Do-Yul Yoo

IPC分类号： H01L29/06 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/336 ,  H01L21/00

CPC分类号： H01L23/544 ,  G03F7/70633 ,  H01L29/665 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： An overlay key formed in a scribe lane and used to align a circuit pattern may include a lower overlay mark formed on a metal silicide layer directly in contact with a silicon substrate. A method of forming an overlay key in a scribe lane may include providing a silicon substrate, forming a metal silicide layer to be in direct contact with the silicon substrate, and forming a lower overlay mark on the metal silicide layer.

摘要翻译： 形成在划线中并用于对齐电路图案的覆盖键可以包括形成在直接与硅衬底接触的金属硅化物层上的下覆盖标记。 在划线中形成覆盖键的方法可以包括提供硅衬底，形成与硅衬底直接接触的金属硅化物层，以及在金属硅化物层上形成较低的重叠标记。

公开(公告)号：US20080014511A1

公开(公告)日：2008-01-17

申请号：US11777863

申请日：2007-07-13

申请人： Do-Yul YOO ,  Ji-Yong YOU ,  Joong-Sung KIM ,  Hyung-Joo YOUN

发明人： Do-Yul YOO ,  Ji-Yong YOU ,  Joong-Sung KIM ,  Hyung-Joo YOUN

IPC分类号： G03C5/00 ,  G03F9/00 ,  G03F1/00

CPC分类号： G03F7/70633

摘要： Provided are a photomask and a method of fabricating a semiconductor device. The photomask includes a photomask substrate including a chip region and a scribe lane region, with an overlay mark formed in the scribe lane region. The overlay mark includes one or more sub-overlay marks. Each of the sub-overlay marks includes a plurality of unit regions sequentially connected to each other and having different widths, where the width of a given unit region is constant.

摘要翻译： 提供了一种光掩模和一种制造半导体器件的方法。 光掩模包括具有芯片区域和划线路区域的光掩模基板，在划线路区域形成有覆盖标记。 覆盖标记包括一个或多个子覆盖标记。 每个子覆盖标记包括彼此顺序连接并且具有不同宽度的多个单位区域，其中给定单位区域的宽度是恒定的。