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1.发明申请ELECTRONIC DEVICES WITH ULTRAVIOLET BLOCKING LAYERS AND PROCESSES OF FORMING THE SAME 有权具有超紫外线阻挡层的电子器件及其形成方法公开(公告)号：US20090159321A1
公开(公告)日：2009-06-25
申请号：US11962714
申请日：2007-12-21
CPC分类号： H01L21/76802 , H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： An electronic device can include a conductive feature and an ultraviolet (“UV”) blocking layer overlying the conductive feature. The electronic device can also include an insulating layer overlying the UV blocking layer. The electronic device can further include a conductive structure extending into an opening within the insulating layer, wherein the conductive structure is electrically connected to the conductive feature. In one aspect, the UV blocking layer lies within 90 nm of the conductive structure. The insulating layer can be at least 4 times thicker than the UV blocking layer. In another aspect, a method can be used in forming the electronic device. In still a further aspect, a system can include the electronic device, a processor, and a display, wherein the processor is electrically coupled to the electronic device and the display.
摘要翻译： 电子设备可以包括导电特征和覆盖导电特征的紫外线（“UV”）阻挡层。 电子器件还可以包括覆盖在UV阻挡层上的绝缘层。 电子设备还可以包括延伸到绝缘层内的开口中的导电结构，其中导电结构电连接到导电特征。 在一个方面，UV阻挡层位于导电结构的90nm内。 绝缘层可以是至少比UV阻挡层厚4倍。 另一方面，一种方法可用于形成电子设备。 在另一方面，系统可以包括电子设备，处理器和显示器，其中处理器电耦合到电子设备和显示器。
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公开(公告)号：US08643083B2
公开(公告)日：2014-02-04
申请号：US13465600
申请日：2012-05-07
IPC分类号： H01L29/792 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76802 , H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： Devices and systems for insulating integrated circuits from ultraviolet (“UV”) light are described. The device includes a conductive feature, a first and second UV blocking layer, a first and second insulating laver, and a conductive structure. The first insulating layer overlays the first UV blocking layer. A via opening extends through the first insulating layer and the first UV blocking layer. The second UV blocking layer overlays the first insulating laver. The second insulating layer overlays the second UV blocking layer. An interconnect trench is defined in the second insulating layer and second UV blocking layer. The conductive structure is electrically connected to the conductive feature and extends into the via opening and along the interconnect trench.
摘要翻译： 描述了用于从紫外（“UV”）光隔离集成电路的装置和系统。 该器件包括导电特征，第一和第二UV阻挡层，第一和第二绝缘紫菜和导电结构。 第一绝缘层覆盖第一UV阻挡层。 通孔开口延伸穿过第一绝缘层和第一UV阻挡层。 第二UV阻挡层覆盖第一绝缘紫菜。 第二绝缘层覆盖第二UV阻挡层。 在第二绝缘层和第二UV阻挡层中限定互连沟槽。 导电结构电连接到导电特征并延伸到通孔开口并沿着互连沟槽。
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3.发明申请ELECTRONIC DEVICES WITH ULTRAVIOLET BLOCKING LAYERS AND PROCESSES OF FORMING THE SAME 有权具有超紫外线阻挡层的电子器件及其形成方法公开(公告)号：US20120218700A1
公开(公告)日：2012-08-30
申请号：US13465600
申请日：2012-05-07
CPC分类号： H01L21/76802 , H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： An electronic device can include a conductive feature and an ultraviolet (“UV”) blocking layer overlying the conductive feature. The electronic device can also include an insulating layer overlying the UV blocking layer. The electronic device can further include a conductive structure extending into an opening within the insulating layer, wherein the conductive structure is electrically connected to the conductive feature. In one aspect, the UV blocking layer lies within 90 nm of the conductive structure. The insulating layer can be at least 4 times thicker than the UV blocking layer. In another aspect, a method can be used in forming the electronic device. In still a further aspect, a system can include the electronic device, a processor, and a display, wherein the processor is electrically coupled to the electronic device and the display.
摘要翻译： 电子设备可以包括导电特征和覆盖导电特征的紫外线（“UV”）阻挡层。 电子器件还可以包括覆盖在UV阻挡层上的绝缘层。 电子设备还可以包括延伸到绝缘层内的开口中的导电结构，其中导电结构电连接到导电特征。 在一个方面，UV阻挡层位于导电结构的90nm内。 绝缘层可以是至少比UV阻挡层厚4倍。 另一方面，一种方法可用于形成电子设备。 在另一方面，系统可以包括电子设备，处理器和显示器，其中处理器电耦合到电子设备和显示器。
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公开(公告)号：US08171627B2
公开(公告)日：2012-05-08
申请号：US11962714
申请日：2007-12-21
IPC分类号： H05K3/02
CPC分类号： H01L21/76802 , H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： A process of forming an electronic device including forming a first ultraviolet (“UV”) blocking layer over a conductive feature, wherein the first UV blocking layer lies within 90 nm of the conductive structure; forming a first insulating layer over the first UV blocking layer; and patterning the first insulating layer and the first UV blocking layer to form a first opening extending to the conductive feature, wherein during the process, the first UV blocking layer is exposed to UV radiation.
摘要翻译： 一种形成电子器件的方法，包括在导电特征上形成第一紫外线（“UV”）阻挡层，其中第一UV阻挡层位于导电结构的90nm范围内; 在所述第一UV阻挡层上形成第一绝缘层; 以及图案化所述第一绝缘层和所述第一UV阻挡层以形成延伸到所述导电特征的第一开口，其中在所述工艺期间，所述第一UV阻挡层暴露于UV辐射。
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