IMAGE SENSOR HAVING COLOR FILTERS
    1.
    发明申请
    IMAGE SENSOR HAVING COLOR FILTERS 审中-公开
    具有彩色滤光片的图像传感器

    公开(公告)号:US20110205410A1

    公开(公告)日:2011-08-25

    申请号:US12975028

    申请日:2010-12-21

    申请人: JUNGCHAK AHN

    发明人: JUNGCHAK AHN

    IPC分类号: H04N5/335

    摘要: Provided is an image sensor having a color filter. The image sensor includes a photoelectric conversion device formed in a semiconductor substrate. Interlayer insulating layers are laminated on an upper portion of the semiconductor substrate. The interlayer insulating layers defines an opening located on an upper portion of the photoelectric conversion device. A color filter is disposed in the opening, and a planarization layer fills the opening on the color filter. The planarization layer has a refractive index which is greater than an average refractive index of the interlayer insulating layers.

    摘要翻译: 提供了具有滤色器的图像传感器。 图像传感器包括形成在半导体衬底中的光电转换装置。 层间绝缘层层叠在半导体基板的上部。 层间绝缘层限定位于光电转换装置的上部的开口。 滤色器设置在开口中,平坦化层填充滤色器上的开口。 平坦化层的折射率大于层间绝缘层的平均折射率。

    COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSORS
    3.
    发明申请
    COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSORS 有权
    补充金属氧化物半导体图像传感器

    公开(公告)号:US20160056198A1

    公开(公告)日:2016-02-25

    申请号:US14830181

    申请日:2015-08-19

    IPC分类号: H01L27/146

    摘要: A complementary metal-oxide-semiconductor (CMOS) image sensor is provided. The CMOS image sensor may include an epitaxial layer having a first conductivity type and having first and second surfaces, a first device isolation layer extending from the first surface to the second surface to define first and second pixel regions, a well impurity layer of a second conductivity type formed adjacent to the first surface and formed in the epitaxial layer of each of the first and second pixel regions, and a second device isolation layer formed in the well impurity layer in each of the first and second pixel regions to define first and second active portions spaced apart from each other in each of the first and second pixel regions.

    摘要翻译: 提供了互补的金属氧化物半导体(CMOS)图像传感器。 CMOS图像传感器可以包括具有第一导电类型并具有第一和第二表面的外延层,从第一表面延伸到第二表面以限定第一和第二像素区域的第一器件隔离层,第二和第二表面的阱杂质层 导电类型,形成在第一表面附近并形成在第一和第二像素区域中的每一个的外延层中,以及第二器件隔离层,形成在第一和第二像素区域中的每一个中的阱杂质层中,以限定第一和第二像素区域 在第一和第二像素区域中的每一个中彼此间隔开的有源部分。

    AUTO-FOCUS IMAGE SENSOR AND DIGITAL IMAGE PROCESSING DEVICE INCLUDING THE SAME
    5.
    发明申请
    AUTO-FOCUS IMAGE SENSOR AND DIGITAL IMAGE PROCESSING DEVICE INCLUDING THE SAME 有权
    自动聚焦图像传感器和数字图像处理装置,包括它们

    公开(公告)号:US20150373255A1

    公开(公告)日:2015-12-24

    申请号:US14746302

    申请日:2015-06-22

    IPC分类号: H04N5/232

    摘要: The inventive concepts provide an auto-focus image sensor and a digital image processing device including the same. The auto-focus image sensor includes a substrate including at least one first pixel used for detecting a phase difference and at least one second pixel used for detecting an image, a deep device isolation portion disposed in the substrate to isolate the first pixel from the second pixel, and a light shielding pattern disposed on the substrate of at least the first pixel. The amount of light incident on the first pixel is smaller than the amount of light incident on the second pixel by the light shielding pattern.

    摘要翻译: 本发明构思提供一种自动对焦图像传感器和包括该自动对焦图像传感器的数字图像处理装置。 所述自动对焦图像传感器包括:基板,包括用于检测相位差的至少一个第一像素和用于检测图像的至少一个第二像素;设置在所述基板中的深度器件隔离部分,用于将所述第一像素与所述第二像素隔离; 像素,以及设置在至少第一像素的基板上的遮光图案。 入射在第一像素上的光的量比通过遮光图案入射到第二像素的光的量小。