公开(公告)号：US20100213544A1

公开(公告)日：2010-08-26

申请号：US12390509

申请日：2009-02-23

申请人： Junwen LIU ,  Purakh Raj VERMA ,  Yan JIN ,  Baofu ZHU

发明人： Junwen LIU ,  Purakh Raj VERMA ,  Yan JIN ,  Baofu ZHU

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/823807 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/7835

摘要： A method of forming a device is presented. A substrate prepared with an active device region is provided. The active device region includes gate stack layers of a gate stack that includes at least a gate electrode layer over a gate dielectric layer. An implant mask is formed on the substrate with an opening exposing a portion of a top gate stack layers. Ions are implanted through the opening and gate stack layers into the substrate to form a channel well. The substrate is patterned to at least remove portion of a top gate stack layer unprotected by the implant mask.

摘要翻译： 提出了一种形成装置的方法。 提供了用有源器件区域制备的衬底。 有源器件区域包括栅叠层的栅堆叠层，其至少包括栅电介质层上的栅极电极层。 在衬底上形成一种植入掩模，该开口露出顶部栅极堆叠层的一部分。 离子通过开口和栅极堆叠层被注入到衬底中以形成通道。 将衬底图案化以至少去除未被植入物掩模保护的顶部栅极叠层的部分。

公开(公告)号：US08053319B2

公开(公告)日：2011-11-08

申请号：US12390509

申请日：2009-02-23

申请人： Junwen Liu ,  Purakh Raj Verma ,  Yan Jin ,  Baofu Zhu

发明人： Junwen Liu ,  Purakh Raj Verma ,  Yan Jin ,  Baofu Zhu

IPC分类号： H01L21/336

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/823807 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/7835

摘要： A method of forming a device is presented. A substrate prepared with an active device region is provided. The active device region includes gate stack layers of a gate stack that includes at least a gate electrode layer over a gate dielectric layer. An implant mask is formed on the substrate with an opening exposing a portion of a top gate stack layers. Ions are implanted through the opening and gate stack layers into the substrate to form a channel well. The substrate is patterned to at least remove portion of a top gate stack layer unprotected by the implant mask.

摘要翻译： 提出了一种形成装置的方法。 提供了用有源器件区域制备的衬底。 有源器件区域包括栅极堆叠的栅叠层，其至少包括栅介电层上的栅电极层。 在衬底上形成一种植入掩模，该开口露出顶部栅极堆叠层的一部分。 离子通过开口和栅极堆叠层被注入到衬底中以形成通道。 将衬底图案化以至少去除未被植入物掩模保护的顶部栅极叠层的部分。