公开(公告)号：US08053319B2

公开(公告)日：2011-11-08

申请号：US12390509

申请日：2009-02-23

申请人： Junwen Liu ,  Purakh Raj Verma ,  Yan Jin ,  Baofu Zhu

发明人： Junwen Liu ,  Purakh Raj Verma ,  Yan Jin ,  Baofu Zhu

IPC分类号： H01L21/336

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/823807 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/7835

摘要： A method of forming a device is presented. A substrate prepared with an active device region is provided. The active device region includes gate stack layers of a gate stack that includes at least a gate electrode layer over a gate dielectric layer. An implant mask is formed on the substrate with an opening exposing a portion of a top gate stack layers. Ions are implanted through the opening and gate stack layers into the substrate to form a channel well. The substrate is patterned to at least remove portion of a top gate stack layer unprotected by the implant mask.

摘要翻译： 提出了一种形成装置的方法。 提供了用有源器件区域制备的衬底。 有源器件区域包括栅极堆叠的栅叠层，其至少包括栅介电层上的栅电极层。 在衬底上形成一种植入掩模，该开口露出顶部栅极堆叠层的一部分。 离子通过开口和栅极堆叠层被注入到衬底中以形成通道。 将衬底图案化以至少去除未被植入物掩模保护的顶部栅极叠层的部分。

公开(公告)号：US08790966B2

公开(公告)日：2014-07-29

申请号：US13276301

申请日：2011-10-18

申请人： Guowei Zhang ,  Purakh Raj Verma ,  Baofu Zhu

发明人： Guowei Zhang ,  Purakh Raj Verma ,  Baofu Zhu

IPC分类号： H01L21/332

CPC分类号： H01L29/402 ,  H01L29/0653 ,  H01L29/1083 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7823 ,  H01L29/7835

摘要： A method of forming a device is disclosed. The method includes providing a substrate having a device region. The device region includes a source region, a gate region and a drain region defined thereon. The substrate is prepared with gate layers on the substrate. The gate layers are patterned to form a gate in the gate region and a field structure surrounding the drain region. A source and a drain are formed in the source region and drain region respectively. The drain is separated from the gate on a second side of the gate and the source is adjacent to a first side of the gate. An interconnection to the field structure is formed. The interconnection is coupled to a potential which distributes the electric field across the substrate between the second side of the gate and the drain.

摘要翻译： 公开了一种形成装置的方法。 该方法包括提供具有器件区域的衬底。 器件区域包括限定在其上的源极区域，栅极区域和漏极区域。 在衬底上用栅极层制备衬底。 栅极层被图案化以在栅极区域中形成栅极，并且围绕漏极区域形成场结构。 在源极区和漏极区分别形成源极和漏极。 漏极在栅极的第二侧与栅极分离，并且源极与栅极的第一侧相邻。 形成与场结构的互连。 互连耦合到在栅极和漏极的第二侧之间跨越衬底分布电场的电势。