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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12272745B2

    公开(公告)日：2025-04-08

    申请号：US17918809

    申请日：2021-04-12

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

    Inventor： Hiromitsu Kato ,  Masahiko Ogura ,  Toshiharu Makino ,  Satoshi Yamasaki ,  Tsubasa Matsumoto ,  Norio Tokuda ,  Takao Inokuma

    IPC: H01L29/78 ,  H01L29/16 ,  H01L29/41

    Abstract: The present invention provides a novel semiconductor device for high breakdown voltage having no drift layer. The semiconductor device includes a first semiconductor layer of a first conductivity type which is either a p-type or an n-type conductivity type, a source portion arranged so as to be in contact with the first semiconductor layer and configured as a semiconductor portion of a second conductivity type different from the first conductivity type, a source electrode arranged in ohmic contact with the source portion, a gate electrode arranged on at least one selected from surfaces of the first semiconductor layer via a gate insulating film interposed therebetween and capable of forming by an applied electric field, an inversion layer in a region of the first semiconductor layer near the surface of the first semiconductor layer contacting the gate insulating film, a second semiconductor layer of the first conductivity type arranged so as to be in contact with the inversion layer, and a drain electrode separated from the inversion layer and arranged in Schottky contact with the second semiconductor layer.

    DIAMOND LAMINATE
    4.
    发明申请
    DIAMOND LAMINATE 有权

    公开(公告)号：US20250027218A1

    公开(公告)日：2025-01-23

    申请号：US18707496

    申请日：2022-11-02

    Applicant: DAICEL CORPORATION ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

    Inventor： Norio TOKUDA ,  Satoshi YAMASAKI ,  Hitoshi ASAKAWA ,  Tsubasa MATSUMOTO ,  Shinji NAGAMATSU ,  Tatsuya NAKANO ,  Taro YOSHIKAWA

    IPC: C25B11/043 ,  C25B1/23

    Abstract: Provided is a diamond laminate that exhibits an excellent electron emission capability and can form an electrode reaction field with an excellent reducing property. The laminate of the present disclosure includes an electron excitation layer (1) having a diamond crystal structure in which some carbon atoms are substituted with nitrogen atoms, and a conductive layer (2) having a diamond crystal structure in which some carbon atoms are substituted with boron atoms. The nitrogen atom concentration in the layer (1) is preferably 5×1018 atoms/cm3 or greater, and the boron atom concentration in the layer (2) is preferably 1×1019 atoms/cm3 or greater. The thickness of the layer (1) is preferably from 1 nm to 100 μm, and the thickness of the layer (2) is preferably 1 μm or greater.

    TRACK GENERATION DEVICE AND FLUID APPLICATION SYSTEM
    6.
    发明公开
    TRACK GENERATION DEVICE AND FLUID APPLICATION SYSTEM 审中-公开

    公开(公告)号：US20240165654A1

    公开(公告)日：2024-05-23

    申请号：US18515093

    申请日：2023-11-20

    Applicant: DENSO CORPORATION ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

    Inventor： KAZUKI TAKAGI ,  TOMOAKI OZAKI ,  TOKUO TSUJI ,  TAKAYUKI YAMABE

    IPC: B05C11/10 ,  B05C5/02

    CPC classification number: B05C11/1002 ,  B05C5/02

    Abstract: A track generation device generates a track of a fluid discharge unit that discharges a fluid for applying the fluid to a surface of an object along a target application track. The track generation device includes a storage unit and a track generation unit. The storage unit stores a time-series model indicating a relationship between the track of the fluid discharge unit and an application track of the fluid in consideration of behavior of the fluid due to a viscosity, and the relationship is learned based on an actual track of the fluid discharge unit and an actual application track of the fluid. The track generation unit is configured to generate the track of the fluid discharge unit corresponding to the target application track using the time-series model upon reception of the target application track.

    Fine particle production apparatus and fine particle production method
    7.
    发明授权
    Fine particle production apparatus and fine particle production method 有权

    公开(公告)号：US11986885B2

    公开(公告)日：2024-05-21

    申请号：US17615775

    申请日：2020-06-04

    Applicant: NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY ,  NISSHIN SEIFUN GROUP INC.

    Inventor： Yasunori Tanaka ,  Naoto Kodama ,  Kazuki Onda ,  Shu Watanabe ,  Keitaro Nakamura ,  Shiori Sueyasu

    IPC: B22F9/14 ,  B22F9/12 ,  H05H1/42

    CPC classification number: B22F9/14 ,  B22F9/12 ,  H05H1/42 ,  B22F2202/13

    Abstract: Provided are a fine particle production apparatus and a fine particle production method that can control the particle sizes of fine particles, and efficiently produce a large amount of fine particles having good particle size uniformity. The present invention comprises: a raw material supply unit which supplies raw materials for fine particle production into thermal plasma flame; a plasma torch in which the thermal plasma flame is generated, and which evaporates the raw material supplied by the raw material supply unit by means of the thermal plasma flame to form a mixture in a gas phase state; and a plasma generation unit which generates thermal plasma flame inside the plasma torch. The plasma generation unit includes: a first coil which surrounds the plasma torch, a second coil which is installed below the first coil in the longitudinal direction of the plasma torch and surrounds the circumference of the plasma torch; a first power supply unit which supplies an amplitude-modulated first high-frequency current to the first coil; and a second power supply unit which supplies an amplitude-modulated second high-frequency current to the second coil. The degree of modulation of the first high-frequency current is smaller than the degree of modulation of the second high-frequency current.

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