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1.发明授权Electrophotographic element having a selenium layer containing arsenic in varying concentrations across the layer thickness 失效具有硒层的电子照相元件，其具有跨越层厚度的不同浓度的砷
公开(公告)号：US3973960A
公开(公告)日：1976-08-10
申请号：US438707
申请日：1974-02-01
CPC分类号： G03G5/08207
摘要： Electrophotographic recording material composed of a layer of selenium, selenium alloys, or selenium compounds, with arsenic as a additive, disposed on a conductive carrier is given improved properties by forming the layer to have a total arsenic content of 1 to 20%, by weight, and a concentration gradient such that the arsenic concentration decreases from the exposed surface of the layer in the direction toward the carrier and has a concentration of at least 13% at the exposed surface of the layer.
摘要翻译： 通过设置在导电载体上的由硒，硒合金或硒化合物层（以砷作为添加剂）组成的电子照相记录材料通过形成层具有1至20重量％的总砷含量而获得改进的性能 ，并且浓度梯度使得砷浓度从层的暴露表面朝着载体的方向减小，并且在该层的暴露表面处具有至少13％的浓度。
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2.发明授权Tellurium layer allows vapor deposition of crystalline selenium thereon in making double layer electrophotographic record material 失效碲层允许在其上制备双层电子照相记录材料上的结晶硒的气相沉积
公开(公告)号：US4298671A
公开(公告)日：1981-11-03
申请号：US12858
申请日：1979-02-16
IPC分类号： C23C14/02 , G03G5/043 , H01L31/0272 , G03G5/05
CPC分类号： H01L31/0272 , C23C14/024 , G03G5/0433
摘要： In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive carrier, a layer of tellurium having a thickness of 10 to 500 nm is applied onto the surface of the carrier, and selenium is then vapor-deposited onto the tellurium layer to a thickness of 20 to 100.mu. to form the double layer.
摘要翻译： 在导电载体上制造由双层无定形和结晶硒组成的电子照相记录材料的方法中，将厚度为10-500nm的碲层施加到载体的表面上，然后将硒 气相沉积到碲层上至20至100微米的厚度以形成双层。
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3.发明授权Method for producing an electrophotographic recording material having dual layer of amorphous and crystallized Se 失效制造具有双层无定形和结晶Se的电子照相记录材料的方法
公开(公告)号：US4343883A
公开(公告)日：1982-08-10
申请号：US221445
申请日：1980-12-30
CPC分类号： G03G5/08207 , G03G5/0433
摘要： In a method for producing an electrophotographic recording material composed of a dual layer of amorphous and crystallized selenium applied to an electrically conductive substrate, tellurium is vapor-deposited in a vacuum onto the surface of the conductive substrate to a layer thickness of about 0.5 to about 5 nanometers to form a tellurium layer, and selenium is vapor-deposited onto the tellurium layer to a layer thickness of about 20 to about 100 microns to form the dual layer of amorphous and crystallized selenium.
摘要翻译： 在用于制造由施加到导电基底的双层非晶和结晶硒组成的电子照相记录材料的方法中，将碲气体真空气相沉积到导电基底的表面上至约0.5至约 5纳米以形成碲层，并且将硒气相沉积到碲层上至约20至约100微米的层厚度以形成双层无定形和结晶的硒。
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4.发明授权Vapor deposition of photoconductive selenium onto a metallic substrate having a molten metal coating as bonding layer 失效将感光硒蒸镀在具有熔融金属涂层的金属基材上作为结合层
公开(公告)号：US4094675A
公开(公告)日：1978-06-13
申请号：US489440
申请日：1974-07-17
CPC分类号： G03G5/08207 , G03G5/0433 , G03G5/102 , G03G5/144
摘要： An electrophotographic image carrier is made by depositing an intermediate layer on an electrically conductive substrate and then vapor-depositing, on the intermediate layer, an inorganic photoconductive layer while maintaining the temperature of the substrate during the deposition of the photoconductive layer at a value which is above the melting point of the intermediate layer, but below the damaging temperature of the photoconductive layer.
摘要翻译： 通过在导电性基板上沉积中间层，然后在中间层上气相沉积无机光电导层，同时在光电导层沉积期间保持基板的温度为 高于中间层的熔点，但低于光电导层的破坏温度。
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公开(公告)号：US4046562A
公开(公告)日：1977-09-06
申请号：US534220
申请日：1974-12-19
摘要： An electrophotographic recording material comprises a photoconductive layer of selenium, selenium compounds, or alloys with selenium, a conductive and flexible substrate, and an intermediate layer between the substrate and photoconductive layer, the intermediate layer being a metal having a modulus of elasticity of less than 6000 kp/mm.sup.2 and a recrystallization temperature of less than 40.degree. C.
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公开(公告)号：US4011079A
公开(公告)日：1977-03-08
申请号：US493889
申请日：1974-08-01
CPC分类号： G03G5/08207
摘要： In the fabrication of an electrophotographic recording material of the type composed of selenium, selenium compounds, or alloys with selenium, the method is simplified by initially vapor-depositing the photoconductive recording material onto a carrier at a temperature below the glass transformation temperature, and then heating the recording material to a higher second temperature range between the glass transformation temperature and a temperature just below that at which the electrophotographic properties of the recording material begin to change.
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公开(公告)号：US4008082A
公开(公告)日：1977-02-15
申请号：US678386
申请日：1976-04-19
CPC分类号： G03G5/08207
摘要： In the fabrication of an electrophotographic recording material composed of a photoconductive layer of selenium, at least one selenium alloy, or at least one selenium compound applied to a conductive substrate, the quality and durability of the bond between the layer and the substrate is improved by initially vapor-depositing a thin layer of the photoconductive substance while the substrate temperature is above the glass transformation temperature of the substance, and then vapor-depositing the remainder of the intended layer at a substantially lower substrate temperature.
摘要翻译： 在由硒的光电导层，至少一种硒合金或至少一种施加到导电基底上的硒化合物构成的电子照相记录材料的制造中，通过以下方式提高了层和衬底之间的结合的质量和耐久性： 最初在衬底温度高于物质的玻璃化转变温度的情况下气相沉积光电导物质的薄层，然后在基本上较低的衬底温度下气相沉积预定层的剩余部分。
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