摘要:
Electrophotographic recording material composed of a layer of selenium, selenium alloys, or selenium compounds, with arsenic as a additive, disposed on a conductive carrier is given improved properties by forming the layer to have a total arsenic content of 1 to 20%, by weight, and a concentration gradient such that the arsenic concentration decreases from the exposed surface of the layer in the direction toward the carrier and has a concentration of at least 13% at the exposed surface of the layer.
摘要:
An electrophotographic image carrier is made by depositing an intermediate layer on an electrically conductive substrate and then vapor-depositing, on the intermediate layer, an inorganic photoconductive layer while maintaining the temperature of the substrate during the deposition of the photoconductive layer at a value which is above the melting point of the intermediate layer, but below the damaging temperature of the photoconductive layer.
摘要:
An electrophotographic recording material comprises a photoconductive layer of selenium, selenium compounds, or alloys with selenium, a conductive and flexible substrate, and an intermediate layer between the substrate and photoconductive layer, the intermediate layer being a metal having a modulus of elasticity of less than 6000 kp/mm.sup.2 and a recrystallization temperature of less than 40.degree. C.
摘要:
In the fabrication of an electrophotographic recording material of the type composed of selenium, selenium compounds, or alloys with selenium, the method is simplified by initially vapor-depositing the photoconductive recording material onto a carrier at a temperature below the glass transformation temperature, and then heating the recording material to a higher second temperature range between the glass transformation temperature and a temperature just below that at which the electrophotographic properties of the recording material begin to change.
摘要:
In the fabrication of an electrophotographic recording material composed of a photoconductive layer of selenium, at least one selenium alloy, or at least one selenium compound applied to a conductive substrate, the quality and durability of the bond between the layer and the substrate is improved by initially vapor-depositing a thin layer of the photoconductive substance while the substrate temperature is above the glass transformation temperature of the substance, and then vapor-depositing the remainder of the intended layer at a substantially lower substrate temperature.
摘要:
In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive carrier, a layer of tellurium having a thickness of 10 to 500 nm is applied onto the surface of the carrier, and selenium is then vapor-deposited onto the tellurium layer to a thickness of 20 to 100.mu. to form the double layer.
摘要:
In a method for producing an electrophotographic recording material composed of a dual layer of amorphous and crystallized selenium applied to an electrically conductive substrate, tellurium is vapor-deposited in a vacuum onto the surface of the conductive substrate to a layer thickness of about 0.5 to about 5 nanometers to form a tellurium layer, and selenium is vapor-deposited onto the tellurium layer to a layer thickness of about 20 to about 100 microns to form the dual layer of amorphous and crystallized selenium.