公开(公告)号：US07037738B2

公开(公告)日：2006-05-02

申请号：US10346108

申请日：2003-01-17

申请人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

发明人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

IPC分类号： H01L21/00

CPC分类号： H01L33/22

摘要： There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

摘要翻译： 公开了一种半导体发光元件，包括具有第一表面和第二表面的基板，形成在基板的第一表面上并包含发光层的半导体层叠体和具有光提取表面的电流扩散层 。 发光元件设置有由精细凹入/突出表面构成的光提取表面，其90％构造成使得其具有锥形构造的突出部分的高度为100nm以上 ，突出部的基部的宽度在10〜500nm的范围内。

公开(公告)号：US06593627B2

公开(公告)日：2003-07-15

申请号：US10108648

申请日：2002-03-29

申请人： Katsumi Egashira

发明人： Katsumi Egashira

IPC分类号： H01L2701

CPC分类号： H01L27/1203 ,  H01L21/76243 ,  H01L21/84

摘要： A semiconductor wafer has a first element forming section, a second element forming section adjoining the first element forming section, and a third element forming section adjoining the second element forming section. The first element forming section has a first supporting substrate, a first buried insulating film formed on the first supporting substrate, and a first active layer formed on the first buried insulating film. The second element forming section has a second supporting substrate, a second buried insulating film formed on the second supporting substrate, and a second active layer formed on the second buried insulating film. The second active layer has a thickness being different from a thickness of the first active layer. The third element forming section has a third active layer.

公开(公告)号：US20050145864A1

公开(公告)日：2005-07-07

申请号：US11054409

申请日：2005-02-10

申请人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

发明人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

IPC分类号： H01L21/302 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/22

摘要： There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

摘要翻译： 公开了一种半导体发光元件，包括具有第一表面和第二表面的基板，形成在基板的第一表面上并包含发光层的半导体层叠体和具有光提取表面的电流扩散层 。 发光元件设置有由精细凹入/突出表面构成的光提取表面，其90％构造成使得其具有锥形构造的突出部分的高度为100nm以上 ，突出部的基部的宽度在10〜500nm的范围内。