公开(公告)号：US20110081761A1

公开(公告)日：2011-04-07

申请号：US12895988

申请日：2010-10-01

申请人： KATSUMI KOGE ,  TERUYUKI MINE ,  YASUSHI YAMAZAKI

发明人： KATSUMI KOGE ,  TERUYUKI MINE ,  YASUSHI YAMAZAKI

IPC分类号： H01L21/336 ,  H01L21/311

CPC分类号： H01L21/3086 ,  H01L21/30604 ,  H01L27/0207 ,  H01L27/10876 ,  H01L29/66621

摘要： A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first recess. The protruding portion has a sloped side surface. A first insulating film that fills the first recess is formed. A gate recess is formed in the active region to form a thin film portion that upwardly extends. The thin film portion is positioned between the gate recess and the first insulating film. The thin film portion is a part of the protruding portion. An upper part of the thin film portion is removed by wet-etching to adjust a height of the thin film portion.

摘要翻译： 制造半导体器件的方法可以包括但不限于以下处理。 在半导体衬底中形成第一凹槽以在半导体衬底上限定有源区。 有源区包括由第一凹部包围的半导体衬底的突出部分。 突出部分具有倾斜的侧表面。 形成填充第一凹部的第一绝缘膜。 在有源区域中形成栅极凹槽，以形成向上延伸的薄膜部分。 薄膜部分位于栅极凹槽和第一绝缘膜之间。 薄膜部分是突出部分的一部分。 通过湿蚀刻去除薄膜部分的上部以调节薄膜部分的高度。

公开(公告)号：US08043903B2

公开(公告)日：2011-10-25

申请号：US12895988

申请日：2010-10-01

申请人： Katsumi Koge ,  Teruyuki Mine ,  Yasushi Yamazaki

发明人： Katsumi Koge ,  Teruyuki Mine ,  Yasushi Yamazaki

IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L21/302

CPC分类号： H01L21/3086 ,  H01L21/30604 ,  H01L27/0207 ,  H01L27/10876 ,  H01L29/66621

摘要： A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first recess. The protruding portion has a sloped side surface. A first insulating film that fills the first recess is formed. A gate recess is formed in the active region to form a thin film portion that upwardly extends. The thin film portion is positioned between the gate recess and the first insulating film. The thin film portion is a part of the protruding portion. An upper part of the thin film portion is removed by wet-etching to adjust a height of the thin film portion.

摘要翻译： 制造半导体器件的方法可以包括但不限于以下处理。 在半导体衬底中形成第一凹槽以在半导体衬底上限定有源区。 有源区包括由第一凹部包围的半导体衬底的突出部分。 突出部分具有倾斜的侧表面。 形成填充第一凹部的第一绝缘膜。 在有源区域中形成栅极凹槽，以形成向上延伸的薄膜部分。 薄膜部分位于栅极凹槽和第一绝缘膜之间。 薄膜部分是突出部分的一部分。 通过湿蚀刻去除薄膜部分的上部以调节薄膜部分的高度。