公开(公告)号：US09012983B2

公开(公告)日：2015-04-21

申请号：US13287295

申请日：2011-11-02

申请人： Teruyuki Mine

发明人： Teruyuki Mine

IPC分类号： H01L27/108 ,  H01L29/78 ,  H01L21/762 ,  H01L29/10 ,  H01L29/423

CPC分类号： H01L27/10876 ,  H01L21/76224 ,  H01L27/10891 ,  H01L29/1037 ,  H01L29/4236

摘要： A semiconductor device includes the following elements. A semiconductor substrate has a device formation region. The device formation region is defined by first and second device isolation regions which extend in first and second directions, respectively. The device formation region has a first gate groove which extends in the second direction. A first gate insulating film is disposed in a lower portion of the first gate groove. A first gate electrode is disposed on the first gate insulating film. The first gate electrode is disposed in the lower portion of the first gate groove. A buried insulating film is disposed over the first gate electrode. The buried insulating film is disposed in an upper portion of the first gate groove.

摘要翻译： 半导体器件包括以下元件。 半导体衬底具有器件形成区域。 器件形成区域由分别在第一和第二方向上延伸的第一和第二器件隔离区限定。 器件形成区域具有沿第二方向延伸的第一栅极沟槽。 第一栅极绝缘膜设置在第一栅极沟槽的下部。 第一栅电极设置在第一栅极绝缘膜上。 第一栅电极设置在第一栅极沟槽的下部。 掩埋绝缘膜设置在第一栅电极之上。 掩埋绝缘膜设置在第一栅极沟槽的上部。

公开(公告)号：US20120112258A1

公开(公告)日：2012-05-10

申请号：US13287295

申请日：2011-11-02

申请人： Teruyuki MINE

发明人： Teruyuki MINE

IPC分类号： H01L29/772 ,  H01L29/78

CPC分类号： H01L27/10876 ,  H01L21/76224 ,  H01L27/10891 ,  H01L29/1037 ,  H01L29/4236

摘要： A semiconductor device includes the following elements. A semiconductor substrate has a device formation region. The device formation region is defined by first and second device isolation regions which extend in first and second directions, respectively. The device formation region has a first gate groove which extends in the second direction. A first gate insulating film is disposed in a lower portion of the first gate groove. A first gate electrode is disposed on the first gate insulating film. The first gate electrode is disposed in the lower portion of the first gate groove. A buried insulating film is disposed over the first gate electrode. The buried insulating film is disposed in an upper portion of the first gate groove.

摘要翻译： 半导体器件包括以下元件。 半导体衬底具有器件形成区域。 器件形成区域由分别在第一和第二方向上延伸的第一和第二器件隔离区限定。 器件形成区域具有沿第二方向延伸的第一栅极沟槽。 第一栅极绝缘膜设置在第一栅极沟槽的下部。 第一栅电极设置在第一栅极绝缘膜上。 第一栅电极设置在第一栅极沟槽的下部。 掩埋绝缘膜设置在第一栅电极之上。 掩埋绝缘膜设置在第一栅极沟槽的上部。

公开(公告)号：US20090166726A1

公开(公告)日：2009-07-02

申请号：US12337740

申请日：2008-12-18

申请人： TERUYUKI MINE

发明人： TERUYUKI MINE

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/66795 ,  H01L29/785 ,  H01L29/7853

摘要： There are provided a method of manufacturing a semiconductor device which is capable of narrowing only the width of a Fin channel while maintaining the widths of source and drain regions, and a semiconductor device. The method of manufacturing a semiconductor device is a method of manufacturing a Fin type transistor, including: forming STI region 2 with use of mask layer 8 formed over silicon substrate 1 as a mask; narrowing mask layer 8 by wet etching to form narrowed mask layer 8a; forming stopper oxide film 16 over a surface of narrowed mask layer 8a, depositing polysilicon 17 over an entire surface and then forming anti-reflective film 18 and photoresist 19; forming an opening at photoresist 19 in a portion corresponding to a word line portion, removing anti-reflective film 18 and polysilicon 17 in that portion to expose narrowed mask layer 8a and then removing photoresist 19; and forming Fin channel 30 by etching portions of silicon substrate 1 which lie on opposite sides of and below narrowed mask layer 8a with narrowed mask layer 8a as a mask.

摘要翻译： 提供了一种制造半导体器件的方法，该半导体器件能够仅维持Fin沟道的宽度，同时保持源极和漏极区域的宽度以及半导体器件。 制造半导体器件的方法是制造鳍型晶体管的方法，包括：使用在硅衬底1上形成的掩模层8作为掩模形成STI区域2; 通过湿蚀刻使掩模层8变窄，形成变窄的掩模层8a; 在变窄的掩模层8a的表面上形成终止氧化膜16，在整个表面上沉积多晶硅17，然后形成抗反射膜18和光致抗蚀剂19; 在对应于字线部分的部分中在光致抗蚀剂19处形成开口，在该部分中除去抗反射膜18和多晶硅17以暴露变窄的掩模层8a，然后除去光致抗蚀剂19; 并且通过蚀刻位于具有变窄的掩模层8a作为掩模的变窄的掩模层8a的相对两侧的硅衬底1的部分来形成Fin通道30。

公开(公告)号：US06984797B2

公开(公告)日：2006-01-10

申请号：US10869258

申请日：2004-06-15

申请人： Kazuaki Morita ,  Kokichi Tobita ,  Yoshikazu Hirai ,  Teruyuki Mine ,  Tadashi Sato

发明人： Kazuaki Morita ,  Kokichi Tobita ,  Yoshikazu Hirai ,  Teruyuki Mine ,  Tadashi Sato

IPC分类号： H01H9/18

CPC分类号： H01H3/122 ,  H01H2219/0622

摘要： A push-button switch has a plunger to be pressed so as to activate its main body supported by a base member. A cap serving as a pressing member is on an outer edge portion of the plunger. The outer periphery of the cap is surrounded by a frame part of a lens member made of a transparent resin material such that the light from a light source disposed near the center of the plunger is guided to the upper edge part of the frame part.

摘要翻译： 按钮开关具有被按压的柱塞，以便启动其由基座构件支撑的主体。 作为按压部件的帽位于柱塞的外缘部。 盖的外周被由透明树脂材料制成的透镜构件的框架部分包围，使得设置在柱塞中心附近的光源的光被引导到框架部分的上边缘部分。

公开(公告)号：US20110081761A1

公开(公告)日：2011-04-07

申请号：US12895988

申请日：2010-10-01

申请人： KATSUMI KOGE ,  TERUYUKI MINE ,  YASUSHI YAMAZAKI

发明人： KATSUMI KOGE ,  TERUYUKI MINE ,  YASUSHI YAMAZAKI

IPC分类号： H01L21/336 ,  H01L21/311

CPC分类号： H01L21/3086 ,  H01L21/30604 ,  H01L27/0207 ,  H01L27/10876 ,  H01L29/66621

摘要： A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first recess. The protruding portion has a sloped side surface. A first insulating film that fills the first recess is formed. A gate recess is formed in the active region to form a thin film portion that upwardly extends. The thin film portion is positioned between the gate recess and the first insulating film. The thin film portion is a part of the protruding portion. An upper part of the thin film portion is removed by wet-etching to adjust a height of the thin film portion.

摘要翻译： 制造半导体器件的方法可以包括但不限于以下处理。 在半导体衬底中形成第一凹槽以在半导体衬底上限定有源区。 有源区包括由第一凹部包围的半导体衬底的突出部分。 突出部分具有倾斜的侧表面。 形成填充第一凹部的第一绝缘膜。 在有源区域中形成栅极凹槽，以形成向上延伸的薄膜部分。 薄膜部分位于栅极凹槽和第一绝缘膜之间。 薄膜部分是突出部分的一部分。 通过湿蚀刻去除薄膜部分的上部以调节薄膜部分的高度。

公开(公告)号：US07867853B2

公开(公告)日：2011-01-11

申请号：US12337740

申请日：2008-12-18

申请人： Teruyuki Mine

发明人： Teruyuki Mine

IPC分类号： H01L21/336

CPC分类号： H01L29/66795 ,  H01L29/785 ,  H01L29/7853

摘要： There are provided a method of manufacturing a semiconductor device which is capable of narrowing only the width of a Fin channel while maintaining the widths of source and drain regions, and a semiconductor device. The method of manufacturing a semiconductor device is a method of manufacturing a Fin type transistor, including: forming STI region 2 with use of mask layer 8 formed over silicon substrate 1 as a mask; narrowing mask layer 8 by wet etching to form narrowed mask layer 8a; forming stopper oxide film 16 over a surface of narrowed mask layer 8a, depositing polysilicon 17 over an entire surface and then forming anti-reflective film 18 and photoresist 19; forming an opening at photoresist 19 in a portion corresponding to a word line portion, removing anti-reflective film 18 and polysilicon 17 in that portion to expose narrowed mask layer 8a and then removing photoresist 19; and forming Fin channel 30 by etching portions of silicon substrate 1 which lie on opposite sides of and below narrowed mask layer 8a with narrowed mask layer 8a as a mask.

摘要翻译： 提供了一种制造半导体器件的方法，该半导体器件能够仅维持Fin沟道的宽度，同时保持源极和漏极区域的宽度以及半导体器件。 制造半导体器件的方法是制造鳍型晶体管的方法，包括：使用在硅衬底1上形成的掩模层8作为掩模形成STI区域2; 通过湿蚀刻使掩模层8变窄，形成变窄的掩模层8a; 在变窄的掩模层8a的表面上形成终止氧化膜16，在整个表面上沉积多晶硅17，然后形成抗反射膜18和光致抗蚀剂19; 在对应于字线部分的部分中在光致抗蚀剂19处形成开口，在该部分中除去抗反射膜18和多晶硅17以暴露变窄的掩模层8a，然后除去光致抗蚀剂19; 并且通过蚀刻位于具有变窄的掩模层8a作为掩模的变窄的掩模层8a的相对两侧的硅衬底1的部分来形成Fin通道30。

公开(公告)号：US08043903B2

公开(公告)日：2011-10-25

申请号：US12895988

申请日：2010-10-01

申请人： Katsumi Koge ,  Teruyuki Mine ,  Yasushi Yamazaki

发明人： Katsumi Koge ,  Teruyuki Mine ,  Yasushi Yamazaki

IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L21/302

CPC分类号： H01L21/3086 ,  H01L21/30604 ,  H01L27/0207 ,  H01L27/10876 ,  H01L29/66621

摘要： A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first recess. The protruding portion has a sloped side surface. A first insulating film that fills the first recess is formed. A gate recess is formed in the active region to form a thin film portion that upwardly extends. The thin film portion is positioned between the gate recess and the first insulating film. The thin film portion is a part of the protruding portion. An upper part of the thin film portion is removed by wet-etching to adjust a height of the thin film portion.

摘要翻译： 制造半导体器件的方法可以包括但不限于以下处理。 在半导体衬底中形成第一凹槽以在半导体衬底上限定有源区。 有源区包括由第一凹部包围的半导体衬底的突出部分。 突出部分具有倾斜的侧表面。 形成填充第一凹部的第一绝缘膜。 在有源区域中形成栅极凹槽，以形成向上延伸的薄膜部分。 薄膜部分位于栅极凹槽和第一绝缘膜之间。 薄膜部分是突出部分的一部分。 通过湿蚀刻去除薄膜部分的上部以调节薄膜部分的高度。