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    In-die cover forming method and method for manufacturing product integrated with cover
    1.
    发明申请
    In-die cover forming method and method for manufacturing product integrated with cover 有权
    模具盖成型方法和制造与盖子整合的产品的方法

    公开(公告)号：US20070075464A1

    公开(公告)日：2007-04-05

    申请号：US11492228

    申请日：2006-07-25

    申请人： Kenichi Furuta ,  Tokimasa Ito ,  Hiroshi Mukai ,  Kazumichi Shigeno

    发明人： Kenichi Furuta ,  Tokimasa Ito ,  Hiroshi Mukai ,  Kazumichi Shigeno

    IPC分类号： B29C51/10

    CPC分类号： B29C51/16 ,  B29C33/12 ,  B29C51/10 ,  B29C51/12 ,  B29C51/30 ,  B29C2791/006

    摘要： An in-die cover forming method for integrally forming a cover member with a surface of a base member in a die is provided. The die including an upper die half and a lower die half. The upper die halves are movable relative to each other. The base member is set on the lower die half such that its back is opposed to the lower die half. Using position determining mechanisms located between the lower die half and the back of the base member, the position of the surface of the base member in relation to the lower die half in the die moving direction is determined. The cover member is placed between the base member and the upper die half. The cover member is integrated with the surface of the base member by closing the upper die half with respect to the lower die half while pressing the cover member against the base member through vacuuming.

    摘要翻译： 提供了一种用于在模具中一体地形成具有基底构件的表面的盖构件的模内盖成型方法。 模具包括上半模和下半模。 上半模可相对于彼此移动。 基部构件设置在下半模上，使得其后部与下半模相对。 使用位于下模半部和基部件背面之间的位置确定机构，确定基件的表面相对于下模具在模移动方向上的位置。 盖构件放置在基部构件和上模具之间。 盖构件通过相对于下模具半体关闭上模具半部而通过抽真空将盖构件压靠在基座构件上而与基座构件的表面一体化。

    Vertical MOS semiconductor device
    2.
    发明授权
    Vertical MOS semiconductor device 有权
    垂直MOS半导体器件

    公开(公告)号：US06313504B1

    公开(公告)日：2001-11-06

    申请号：US09525329

    申请日：2000-03-13

    申请人： Kenichi Furuta ,  Yutaka Akiyama ,  Osamu Kawai

    发明人： Kenichi Furuta ,  Yutaka Akiyama ,  Osamu Kawai

    IPC分类号： H01L2976

    CPC分类号： H01L29/7811 ,  H01L29/1095 ,  H01L29/7802

    摘要： A vertical MOS semiconductor device in accordance with the present invention is provided with a semiconductor base; and a vertical MOS transistor having a well diffusion layer of a conductive type opposite to that of the semiconductor base, and a source diffusion layer of the same conductive type as that of the semiconductor base; wherein a channel length in a horizontal direction with respect to a main surface of the semiconductor base from a junction of the source diffusion layer to a junction of the well diffusion layer is set such that it is larger than a length at which a punch-through phenomenon takes place between the semiconductor base and the source diffusion layer and at which a minimum resistance value of the well diffusion layer is obtained. This arrangement makes it possible to reduce the size of the entire vertical MOS semiconductor device to 90% as compared with a conventional vertical MOS semiconductor device, without sacrificing a high breakdown voltage characteristic.

    摘要翻译： 根据本发明的垂直MOS半导体器件设置有半导体基底; 以及具有与半导体基底相反的导电类型的良好扩散层的垂直MOS晶体管和与半导体基底相同的导电类型的源极扩散层; 其中相对于所述半导体基底的主表面的水平方向上的沟道长度从所述源极扩散层到所述阱扩散层的接合点的接合点设定为使得其大于所述穿透 在半导体基底和源极扩散层之间发生现象，并且获得了阱扩散层的最小电阻值。 由此，与现有的垂直MOS半导体器件相比，能够将垂直MOS半导体器件整体的尺寸减小到90％，而不会牺牲高的击穿电压特性。

    Air bag cover
    4.
    发明授权
    Air bag cover 失效
    气囊盖

    公开(公告)号：US5979931A

    公开(公告)日：1999-11-09

    申请号：US764026

    申请日：1996-12-11

    申请人： Chiharu Totani ,  Shigehiro Ueno ,  Tetsuya Fujii ,  Kenichi Furuta

    发明人： Chiharu Totani ,  Shigehiro Ueno ,  Tetsuya Fujii ,  Kenichi Furuta

    IPC分类号： B32B27/08 ,  B60R21/20 ,  B60R21/215 ,  B60R21/2165 ,  B60R21/16

    CPC分类号： B60R21/2165 ,  B32B27/08

    摘要： The air bag cover has a skin layer on the surface side of the cover and a core on the back surface side of the cover. The cover is disposed so as to cover an air bag. The air bag cover has a breakable portion which is broken when the air bag expands. The breakable portion is formed by providing a continuous or intermittent concave portion on the back surface side of the air bag cover. A fragile layer lower in tensile strength than the skin layer is fused to the back surface side of the skin layer.

    摘要翻译： 气囊盖在盖的表面侧上具有表层，在盖的背面侧具有芯。 盖子被设置成覆盖气囊。 安全气囊盖有一个易爆部分，当气囊膨胀时，该部分破裂。 通过在气囊罩的背面侧设置连续的或间歇的凹部来形成可破坏部。 与皮层相比，拉伸强度较低的脆性层与表皮层的背面侧熔合。

    Car interior finish member with air bag cover
    6.
    发明授权
    Car interior finish member with air bag cover 失效
    汽车内饰配气囊盖

    公开(公告)号：US5779262A

    公开(公告)日：1998-07-14

    申请号：US764022

    申请日：1996-12-11

    申请人： Chiharu Totani ,  Shigehiro Ueno ,  Tetsuya Fujii ,  Kenichi Furuta

    发明人： Chiharu Totani ,  Shigehiro Ueno ,  Tetsuya Fujii ,  Kenichi Furuta

    IPC分类号： B32B27/08 ,  B60R21/20 ,  B60R21/215

    CPC分类号： B32B27/08 ,  B60R21/2165

    摘要： A car interior finish member where a body portion and a cover portion are integrally molded in a shape retaining thermoplastic resin. The cover portion has a hinge portion and a breakable seam which form an air bag developing port when an air bag is operated. A design sheet is molded integrally with the cover portion and has at least an outer skin layer and a barrier layer. The barrier layer is formed of a material thermally fusible with the thermoplastic resin of the body and cover portions. The hinge portion and breakable seam are formed variously by molding of the cover portion and by appropriate notching up to and through the barrier layer of the design sheet.

    摘要翻译： 一种汽车内饰件，其中主体部分和盖部分一体地模制成保持热塑性树脂的形状。 当操作气囊时，盖部分具有铰链部分和可破裂的接缝，其形成气囊展开口。 设计片与盖部一体地模制，并且至少具有外表皮层和阻挡层。 阻挡层由与本体的热塑性树脂和盖部分热熔的材料形成。 铰链部分和可破裂的接缝通过模制盖部分并通过适当地切口直到并穿过设计片的阻挡层来形成。

    Field-effect transistor with a gate having a plurality of branching elements arranged parallel to each other
    8.
    发明授权
    Field-effect transistor with a gate having a plurality of branching elements arranged parallel to each other 失效
    具有栅极的场效应晶体管具有彼此平行布置的多个分支元件

    公开(公告)号：US07468539B2

    公开(公告)日：2008-12-23

    申请号：US10982916

    申请日：2004-11-08

    申请人： Kenichi Furuta

    发明人： Kenichi Furuta

    IPC分类号： H01L27/088

    CPC分类号： H01L29/66712 ,  H01L29/42376 ,  H01L29/4238

    摘要： A field-effect transistor includes a substrate of a first conductivity type, and a channel diffusion region of a second conductivity type provided in the first conductivity type substrate. The transistor also includes a first conductivity type contact region provided in the second conductivity type channel diffusion region, and an electrode wiring connected to the first conductivity type source contact region and second conductivity type source contact region. A surface insulating film is provided on the second conductivity type channel diffusion region. A plurality of linear gate electrodes are provided on the surface insulating film. The gate electrodes are parallel to each other. The spacing between the gate electrodes is less than the thickness of the surface insulating film.

    摘要翻译： 场效应晶体管包括第一导电类型的衬底和设置在第一导电类型衬底中的第二导电类型的沟道扩散区。 晶体管还包括设置在第二导电类型沟道扩散区域中的第一导电类型接触区域和连接到第一导电类型源极接触区域和第二导电类型源极接触区域的电极布线。 表面绝缘膜设置在第二导电型沟道扩散区上。 在表面绝缘膜上设置多个线状栅电极。 栅电极彼此平行。 栅电极之间的间隔小于表面绝缘膜的厚度。

    Method of forming film including a comb tooth patterning film
    9.
    发明授权
    Method of forming film including a comb tooth patterning film 失效
    形成包括梳齿图形薄膜的薄膜的方法

    公开(公告)号：US07084001B2

    公开(公告)日：2006-08-01

    申请号：US10732213

    申请日：2003-12-11

    申请人： Kenichi Furuta ,  Takahiro Imayoshi

    发明人： Kenichi Furuta ,  Takahiro Imayoshi

    IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/44

    CPC分类号： H01L29/66863 ,  H01L21/28562

    摘要： Resist patterns (R11 and R12) are formed such that an opening between both the films is aligned to the position, where the source electrode (7) is formed, while the region on the N+-layer (5), where the drain electrode (8) is formed afterwards, is covered by the resist film (R11). After ohmic electrode material is applied from a direction perpendicular to a semiconductor substrate (1), the resist films (R11 and R12) are removed with the ohmic electrode films (OM11 and OM12). The remaining ohmic electrode film (OM14) functions as the source electrode (7). After the above-described first lift off process, the second lift off process is performed to form a drain electrode (8) on the N+-layer (5).

    摘要翻译： 形成抗蚀剂图案（R 11和R 12），使得两个膜之间的开口与形成源电极（7）的位置对准，而N + 之后形成漏电极（8）的层（5）由抗蚀剂膜（R 11）覆盖。 在从与半导体衬底（1）垂直的方向施加欧姆电极材料之后，用欧姆电极膜（OM 11和OM 12）去除抗蚀剂膜（R 11和R 12）。 剩余的欧姆电极膜（OM14）用作源电极（7）。 在上述第一剥离处理之后，执行第二剥离处理以在N +层（5）上形成漏电极（8）。

    Methods for molding resin-molded articles
    10.
    发明授权
    Methods for molding resin-molded articles 失效
    树脂成形品的成型方法

    公开(公告)号：US06342176B2

    公开(公告)日：2002-01-29

    申请号：US09215256

    申请日：1998-12-18

    申请人： Atsushi Goto ,  Akio Nakano ,  Tatsuo Yamada ,  Kenichi Furuta ,  Minoru Toda ,  Tetsuya Fujii

    发明人： Atsushi Goto ,  Akio Nakano ,  Tatsuo Yamada ,  Kenichi Furuta ,  Minoru Toda ,  Tetsuya Fujii

    IPC分类号： B29C4514

    CPC分类号： B29C45/1671 ,  B29L2031/3038

    摘要： The object of the invention is to provide a method for molding a resin-molded article having an excellent surface appearance without any resin-intrusion part on the front surface of a skin thereof. In the invention, the skin is placed on a part of a inner wall of a mold and then injecting a synthetic resin into a cavity of the mold to effect an integral molding of a resin-molded article having the skin on a part thereof, wherein a mold having a first gate on a first inner wall part located on the part other than the back surface of the skin placed on the inner wall of said mold and a second gate on a second inner wall part which faces the back surface of the skin placed on the inner wall is employed; and wherein the synthetic resin is first injected from said first gate until the tip portion of the synthetic resin comes close to the edge of said skin, and then the synthetic resin is injected from the second gate.

    摘要翻译： 本发明的目的是提供一种具有优异表面外观的树脂模塑制品的模塑方法，而在其皮肤表面上没有任何树脂侵入部分。 在本发明中，将皮肤放置在模具的内壁的一部分上，然后将合成树脂注入到模具的空腔中，以在其一部分上实现具有皮肤的树脂模制品的整体模制，其中 模具，其位于位于所述模具的内壁上的除皮肤背面以外的部分上的第一内壁部分上的第一浇口，以及面向皮肤背面的第二内壁部分上的第二浇口 放置在内墙上; 并且其中合成树脂首先从所述第一浇口注入，直到合成树脂的末端部分接近所述皮肤的边缘，然后从第二浇口注入合成树脂。