利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

343 条记录 (耗时 0.067 秒)

    SEMICONDUCTOR DEVICE WITH IMPROVED FIELD PLATE
    3.
    发明申请
    SEMICONDUCTOR DEVICE WITH IMPROVED FIELD PLATE 有权
    具有改进的现场板的半导体器件

    公开(公告)号：US20160111503A1

    公开(公告)日：2016-04-21

    申请号：US14517285

    申请日：2014-10-17

    申请人： Cree, Inc.

    发明人： Helmut Hagleitner ,  Fabian Radulescu ,  Saptharishi Sriram ,  Daniel Etter

    IPC分类号： H01L29/40 ,  H01L29/778 ,  H01L21/285 ,  H01L29/20

    CPC分类号： H01L29/402 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4958 ,  H01L29/66068 ,  H01L29/66863 ,  H01L29/7786 ,  H01L29/8128

    摘要： A transistor device includes a semiconductor body, a spacer layer, and a field plate. The spacer layer is over at least a portion of a surface of the semiconductor body. The field plate is over at least a portion of the spacer layer, and includes a first current carrying layer, a refractory metal interposer layer over the first current carrying layer, and a second current carrying layer over the refractory metal interposer layer. By including the refractory metal interposer layer between the first current carrying layer and the second current carrying layer, the electromigration of metals in the field plate is significantly reduced. Since electromigration of metals in the field plate is a common cause of transistor device failures, reducing the electromigration of metals in the field plate improves the reliability and lifetime of the transistor device.

    摘要翻译： 晶体管器件包括半导体本体，间隔层和场板。 间隔层在半导体本体的表面的至少一部分之上。 场板在间隔层的至少一部分之上，并且包括第一载流层，在第一载流层上方的难熔金属插入层，以及在难熔金属插入层上方的第二载流层。 通过在第一载流层和第二载流层之间包含难熔金属插入层，场板中金属的电迁移显着降低。 由于场板中金属的电迁移是晶体管器件故障的常见原因，减少了场板中的金属的电迁移改善了晶体管器件的可靠性和寿命。

    METHOD OF MANUFACTURING PRECISE SEMICONDUCTOR CONTACTS
    6.
    发明申请
    METHOD OF MANUFACTURING PRECISE SEMICONDUCTOR CONTACTS 有权
    制造精密半导体触点的方法

    公开(公告)号：US20150236017A1

    公开(公告)日：2015-08-20

    申请号：US14184976

    申请日：2014-02-20

    申请人： Cree, Inc.

    发明人： Fabian Radulescu

    IPC分类号： H01L27/095 ,  H01L29/423 ,  H01L29/778 ,  H01L21/8232 ,  H01L29/16 ,  H01L29/205 ,  H01L29/20 ,  H01L29/66 ,  H01L29/812

    CPC分类号： H01L27/095 ,  H01L21/8232 ,  H01L27/0605 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/8128

    摘要： A first dielectric layer including a first opening is provided on a first surface of a semiconductor layer. A second dielectric layer is provided on top of the first dielectric layer in the first opening. A first portion of the second dielectric layer is then removed, such that a second portion of the second dielectric layer remains in the first opening. The first dielectric layer is then removed, leaving only the second portion of the second dielectric layer on the surface of the semiconductor layer. An epitaxial layer or a base dielectric layer is grown on the exposed portions of the first surface of the semiconductor layer not covered by the second portion of the second dielectric layer. The second portion of the second dielectric layer is then removed to define one or more contact windows, and a contact metal is deposited in the one or more contact windows.

    摘要翻译： 包括第一开口的第一电介质层设置在半导体层的第一表面上。 在第一开口中的第一电介质层的顶部上设置第二电介质层。 然后去除第二介电层的第一部分，使得第二介电层的第二部分保留在第一开口中。 然后去除第一介电层，仅在半导体层的表面上留下第二介电层的第二部分。 在半导体层的未被第二电介质层的第二部分覆盖的第一表面的暴露部分上生长外延层或基底电介质层。 然后去除第二介电层的第二部分以限定一个或多个接触窗口，并且接触金属沉积在一个或多个接触窗口中。

    Method of manufacturing field effect type compound semiconductor device
    8.
    发明授权
    Method of manufacturing field effect type compound semiconductor device 有权
    制造场效应型化合物半导体器件的方法

    公开(公告)号：US08841154B2

    公开(公告)日：2014-09-23

    申请号：US13916006

    申请日：2013-06-12

    申请人： Electronics and Telecommunications Research Institute

    发明人： Hyung Sup Yoon ,  Byoung-Gue Min ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Jong Min Lee ,  Seong-il Kim ,  Jae Kyoung Mun ,  Eun Soo Nam

    IPC分类号： H01L21/00 ,  H01L21/28

    CPC分类号： H01L21/28008 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/66863

    摘要： Disclosed is a method of manufacturing a field effect type compound semiconductor device in which leakage current of a device is decreased and breakdown voltage is enhanced. The method of manufacturing a field effect type compound semiconductor device includes: stacking an active layer and an ohmic layer on a substrate and forming a first oxide layer on the ohmic layer; forming a mesa region in predetermined regions of the first oxide layer, the ohmic layer, and the active layer; planarizing the mesa region after forming a nitride layer by evaporating a nitride on the mesa region; forming an ohmic electrode on the first oxide layer; forming a minute gate resist pattern after forming a second oxide layer on a semiconductor substrate in which the ohmic electrode is formed and forming a minute gate pattern having a under-cut shaped profile by dry-etching the first oxide layer, the nitride layer, and the second oxide layer; forming a gate recess region by forming a head pattern of a gamma gate electrode on the semiconductor substrate; and forming the gamma gate electrode by evaporating refractory metal on the semiconductor substrate in which the gate recess region is formed.

    摘要翻译： 公开了一种制造场效应型化合物半导体器件的方法，其中器件的漏电流降低并且击穿电压增强。 制造场效应型化合物半导体器件的方法包括：在衬底上堆叠有源层和欧姆层，并在欧姆层上形成第一氧化物层; 在所述第一氧化物层，所述欧姆层和所述有源层的预定区域中形成台面区域; 通过在台面区域上蒸发氮化物，在形成氮化物层之后使台面区域平坦化; 在所述第一氧化物层上形成欧姆电极; 在形成欧姆电极的半导体衬底上形成第二氧化物层之后形成微小栅极抗蚀剂图案，并通过干蚀刻第一氧化物层，氮化物层和形成具有下切形状轮廓的微小栅极图案 第二氧化物层; 通过在所述半导体衬底上形成伽马栅电极的头部图形来形成栅极凹部区域; 以及通过在形成有所述栅极凹部的所述半导体衬底上蒸发难熔金属而形成所述γ栅电极。

    FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
    场效应晶体管及其制造方法

    公开(公告)号：US20140035044A1

    公开(公告)日：2014-02-06

    申请号：US14049816

    申请日：2013-10-09

    申请人： Electronics and Telecommunications Research Institute

    发明人： Hokyun AHN ,  Jong-Won LIM ,  Hyung Sup YOON ,  Byoung-Gue MIN ,  Sang-Heung LEE ,  Hae Cheon KIM ,  Eun Soo NAM

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7831 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/7787 ,  H01L29/812

    摘要： Disclosed are a field-effect transistor and a manufacturing method thereof. The disclosed field-effect transistor includes: a semiconductor substrate; a source ohmic metal layer formed on one side of the semiconductor substrate; a drain ohmic metal layer formed on another side of the semiconductor substrate; a gate electrode formed between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; an insulating film formed on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and a plurality of field electrodes formed on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

    摘要翻译： 公开了场效应晶体管及其制造方法。 所公开的场效应晶体管包括：半导体衬底; 源极欧姆金属层，形成在半导体衬底的一侧上; 形成在所述半导体衬底的另一侧上的漏极欧姆金属层; 在所述源极欧姆金属层和所述漏极欧姆金属层之间形成的栅电极，位于所述半导体衬底的上部; 形成在包括源极欧姆金属层，漏极欧姆金属层和栅电极的半导体衬底的上部上的绝缘膜; 以及形成在绝缘膜的上部的多个场电极，其中，各个场电极下方的绝缘膜具有不同的厚度。

    METHOD OF MANUFACTURING FIELD EFFECT TYPE COMPOUND SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD OF MANUFACTURING FIELD EFFECT TYPE COMPOUND SEMICONDUCTOR DEVICE 有权
    制备场效应型化合物半导体器件的方法

    公开(公告)号：US20140017885A1

    公开(公告)日：2014-01-16

    申请号：US13916006

    申请日：2013-06-12

    申请人： Electronics and Telecommunications Research Institute

    发明人： Hyung Sup YOON ,  Byoung-gue Min ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Jong Min Lee ,  Seong-il Kim ,  Jae Kyoung Mun ,  Eun Soo Nam

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28008 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/66863

    摘要： Disclosed is a method of manufacturing a field effect type compound semiconductor device in which leakage current of a device is decreased and breakdown voltage is enhanced. The method of manufacturing a field effect type compound semiconductor device includes: stacking an active layer and an ohmic layer on a substrate and forming a first oxide layer on the ohmic layer; forming a mesa region in predetermined regions of the first oxide layer, the ohmic layer, and the active layer; planarizing the mesa region after forming a nitride layer by evaporating a nitride on the mesa region; forming an ohmic electrode on the first oxide layer; forming a minute gate resist pattern after forming a second oxide layer on a semiconductor substrate in which the ohmic electrode is formed and forming a minute gate pattern having a under-cut shaped profile by dry-etching the first oxide layer, the nitride layer, and the second oxide layer; forming a gate recess region by forming a head pattern of a gamma gate electrode on the semiconductor substrate; and forming the gamma gate electrode by evaporating refractory metal on the semiconductor substrate in which the gate recess region is formed.

    摘要翻译： 公开了一种制造场效应型化合物半导体器件的方法，其中器件的漏电流降低并且击穿电压增强。 制造场效应型化合物半导体器件的方法包括：在衬底上堆叠有源层和欧姆层，并在欧姆层上形成第一氧化物层; 在所述第一氧化物层，所述欧姆层和所述有源层的预定区域中形成台面区域; 通过在台面区域上蒸发氮化物，在形成氮化物层之后使台面区域平坦化; 在所述第一氧化物层上形成欧姆电极; 在形成欧姆电极的半导体衬底上形成第二氧化物层之后形成微小栅极抗蚀剂图案，并通过干蚀刻第一氧化物层，氮化物层和形成具有下切形状轮廓的微小栅极图案 第二氧化物层; 通过在所述半导体衬底上形成伽马栅电极的头部图形来形成栅极凹部区域; 以及通过在形成有所述栅极凹部的所述半导体衬底上蒸发难熔金属而形成所述γ栅电极。